{"id":2271,"date":"2025-09-11T13:33:47","date_gmt":"2025-09-11T05:33:47","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/4-inch-sic-substrate-n-type\/"},"modified":"2026-04-29T15:27:33","modified_gmt":"2026-04-29T07:27:33","slug":"4-inch-sic-substrate-n-type","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/fr\/product\/4-inch-sic-substrate-n-type\/","title":{"rendered":"4 Inch SiC Substrate N-type"},"content":{"rendered":"

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\"tech_1_2_size\"<\/div>\n

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Silicon carbide (SiC) single crystal material has a large band gap width (~Si 3 times), high thermal conductivity (~Si 3.3 times or GaAs 10 times), high electron saturation migration rate (~Si 2.5 times), high breakdown electric field (~Si 10 times or GaAs 5 times) and other outstanding characteristics.<\/p>\n

Semicera energy can provide customers with high-quality Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; In addition, we can provide customers with homogeneous and heterogeneous silicon carbide epitaxial sheets; We can also customize the epitaxial sheet according to the specific needs of customers, and there is no minimum order quantity.<\/p>\n

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\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
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Articles<\/p>\n<\/td>\n

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Production<\/p>\n<\/td>\n

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Recherche<\/p>\n<\/td>\n

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Factice<\/p>\n<\/td>\n<\/tr>\n

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Param\u00e8tres de cristal<\/p>\n<\/td>\n<\/tr>\n

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Polytype<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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Erreur d'orientation de la surface<\/p>\n<\/td>\n

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<11-20 >4±0.15°<\/p>\n<\/td>\n<\/tr>\n

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Param\u00e8tres \u00e9lectriques<\/p>\n<\/td>\n<\/tr>\n

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Dopant<\/p>\n<\/td>\n

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azote de type N<\/p>\n<\/td>\n<\/tr>\n

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R\u00e9sistivit\u00e9<\/p>\n<\/td>\n

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0.015-0.025ohm·cm<\/p>\n<\/td>\n<\/tr>\n

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Param\u00e8tres m\u00e9caniques<\/p>\n<\/td>\n<\/tr>\n

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Diam\u00e8tre<\/p>\n<\/td>\n

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99.5 – 100mm<\/p>\n<\/td>\n<\/tr>\n

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\u00c9paisseur<\/p>\n<\/td>\n

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350±25 μm<\/p>\n<\/td>\n<\/tr>\n

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Orientation plate primaire<\/p>\n<\/td>\n

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[1-100]±5°<\/p>\n<\/td>\n<\/tr>\n

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Longueur plate primaire<\/p>\n<\/td>\n

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32.5±1.5mm<\/p>\n<\/td>\n<\/tr>\n

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Secondary flat position<\/p>\n<\/td>\n

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90° CW from primary flat ±5°. silicon face up<\/p>\n<\/td>\n<\/tr>\n

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Secondary flat length<\/p>\n<\/td>\n

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18±1.5mm<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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≤5 μm<\/p>\n<\/td>\n

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≤10 μm<\/p>\n<\/td>\n

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≤20 μm<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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≤2 μm(5mm*5mm)<\/p>\n<\/td>\n

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≤5 μm(5mm*5mm)<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Arc<\/p>\n<\/td>\n

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-15μm ~ 15μm<\/p>\n<\/td>\n

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-35μm ~ 35μm<\/p>\n<\/td>\n

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-45μm ~ 45μm<\/p>\n<\/td>\n<\/tr>\n

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Cha\u00eene<\/p>\n<\/td>\n

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≤20 μm<\/p>\n<\/td>\n

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≤45 μm<\/p>\n<\/td>\n

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≤50 μm<\/p>\n<\/td>\n<\/tr>\n

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Rugosit\u00e9 avant (si-face) (AFM)<\/p>\n<\/td>\n

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Ra≤0.2nm (5μm*5μm)<\/p>\n<\/td>\n<\/tr>\n

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Structure<\/p>\n<\/td>\n<\/tr>\n

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Densit\u00e9 de micro-<\/p>\n<\/td>\n

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≤1 ea\/cm2<\/p>\n<\/td>\n

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≤5 ea\/cm2<\/p>\n<\/td>\n

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≤10 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

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Impuret\u00e9s m\u00e9talliques<\/p>\n<\/td>\n

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≤5E10atoms\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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BPB<\/p>\n<\/td>\n

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≤1500 ea\/cm2<\/p>\n<\/td>\n

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≤3000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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≤500 ea\/cm2<\/p>\n<\/td>\n

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≤1000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Qualit\u00e9 avant<\/p>\n<\/td>\n<\/tr>\n

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Devant<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Finition de surface<\/p>\n<\/td>\n

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CMP SI-FACE<\/p>\n<\/td>\n<\/tr>\n

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Particules<\/p>\n<\/td>\n

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≤60ea\/wafer (size≥0.3μm)<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Rayures<\/p>\n<\/td>\n

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≤2ea\/mm. Cumulative length ≤Diameter<\/p>\n<\/td>\n

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Cumulative length≤2*Diameter<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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PELLE \/ PEPES ORANGE \/ TAPPES \/ COMMENTS \/ CRESCHES \/ CONTAMINATION<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Coups de bord \/ retraits \/ fracture \/ plaques hexagonales<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Zones de polytype<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n

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Cumulative area≤20%<\/p>\n<\/td>\n

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Cumulative area≤30%<\/p>\n<\/td>\n<\/tr>\n

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Marquage laser avant<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n<\/tr>\n

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Qualit\u00e9 du dos<\/p>\n<\/td>\n<\/tr>\n

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Finition arri\u00e8re<\/p>\n<\/td>\n

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CMP C-FACE<\/p>\n<\/td>\n<\/tr>\n

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Rayures<\/p>\n<\/td>\n

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≤5ea\/mm,Cumulative length≤2*Diameter<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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D\u00e9fauts arri\u00e8re (puces de bord \/ retraits)<\/p>\n<\/td>\n

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Aucun<\/p>\n<\/td>\n<\/tr>\n

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Rugosit\u00e9 du dos<\/p>\n<\/td>\n

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Ra≤0.2nm (5μm*5μm)<\/p>\n<\/td>\n<\/tr>\n

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Marquage laser arri\u00e8re<\/p>\n<\/td>\n

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1 mm (du bord sup\u00e9rieur)<\/p>\n<\/td>\n<\/tr>\n

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Bord<\/p>\n<\/td>\n<\/tr>\n

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Bord<\/p>\n<\/td>\n

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Chanfreiner<\/p>\n<\/td>\n<\/tr>\n

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Conditionnement<\/p>\n<\/td>\n<\/tr>\n

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Conditionnement<\/p>\n<\/td>\n

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The inner bag is filled with nitrogen and the outer bag is vacuumed.<\/p>\n

Multi-wafer cassette, epi-ready.<\/p>\n<\/td>\n<\/tr>\n

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*Remarques: \u00abNA\u00bb signifie qu'aucun \u00e9l\u00e9ment de demande non mentionn\u00e9 ne peut se r\u00e9f\u00e9rer au semi-std.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n

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Semicera offers a wide range of 4H-8H SiC wafers. For many years, we have been a manufacturer and supplier of products to the semiconductor and photovoltaic industries. Our main products include: Silicon carbide etch plates, silicon carbide boat trailers, silicon carbide wafer boats (PV & Semiconductor), silicon carbide furnace tubes, silicon carbide cantilever paddles, silicon carbide chucks, silicon carbide beams, as well as CVD SiC coatings and TaC coatings. Covering most European and American markets. We look forward to being your long-term partner in China.<\/p>","protected":false},"featured_media":4571,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[35,26],"product_tag":[],"class_list":{"0":"post-2271","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-sic-substrate","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product\/2271","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/comments?post=2271"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/media\/4571"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/media?parent=2271"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_brand?post=2271"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_cat?post=2271"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/fr\/wp-json\/wp\/v2\/product_tag?post=2271"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}