Substrato GA2O3

Ga2O3Substrate– Unlock new possibilities in power electronics and optoelectronics with Semicera’s Ga2O3Substrate, engineered for exceptional performance in high-voltage and high-frequency applications.

Semicera is proud to present the Ga₂O₃ Substrate, a cutting-edge material poised to revolutionize power electronics and optoelectronics. Gallium Oxide (Ga₂O₃) substrates are known for their ultra-wide bandgap, making them ideal for high-power and high-frequency devices.

Caratteristiche chiave:

• Ultra-Wide Bandgap: Ga₂O3 offers a bandgap of approximately 4.8 eV, significantly enhancing its ability to handle high voltages and temperatures compared to traditional materials like Silicon and GaN.

• High Breakdown Voltage: With an exceptional breakdown field, the Ga₂O₃ Substrate is perfect for devices requiring high-voltage operation, ensuring greater efficiency and reliability.

• Thermal Stability: The material’s superior thermal stability makes it suitable for applications in extreme environments, maintaining performance even under harsh conditions.

• Versatile Applications: Ideal for use in high-efficiency power transistors, UV optoelectronic devices, and more, providing a robust foundation for advanced electronic systems.

Experience the future of semiconductor technology with Semicera’s Ga₂O₃ Substrate. Designed to meet the growing demands of high-power and high-frequency electronics, this substrate sets a new standard for performance and durability. Trust Semicera to deliver innovative solutions for your most challenging applications.

Elementi	Produzione	Ricerca	Manichino
Parametri cristallini
Politipo	4H
Errore di orientamento della superficie	4±0.15°
Parametri elettrici
Drogante	azoto di tipo n
Resistività	0,015-0,025ohm · cm
Parametri meccanici
Diametro	150,0 ± 0,2 mm
Spessore	350 ± 25 µm
Orientamento piatto primario	[1-100]±5°
Lunghezza piatta primaria	47,5 ± 1,5 mm
Piatto secondario	Nessuno
TTV	≤5 µm	≤10 µm	≤15 µm
LTV	≤3 μm (5mm*5mm)	≤5 μm (5 mm*5 mm)	≤10 μm (5 mm*5 mm)
Arco	-15μm ~ 15μm	-35μm ~ 35 μm	-45μm ~ 45μm
Ordito	≤35 µm	≤45 µm	≤55 µm
Front (Si-Face) Rughess (AFM)	RA≤0,2 nm (5μm*5μm)
Struttura
Densità di micrivipe	<1 ea/cm2	<10 ea/cm2	<15 ea/cm2
Impurità dei metalli	≤5E10atoms/cm2		N / A
BPD	≤1500 ea/cm2	≤3000 ea/cm2	N / A
TSD	≤500 ea/cm2	≤1000 ea/cm2	N / A
Qualità anteriore
Davanti	Si
Finitura superficiale	Si-Face CMP
Particelle	≤60ea/wafer (dimensione≥0,3μm)	N / A
Graffi	≤5ea/mm. Lunghezza cumulativa ≤Diameter	Diametro cumulativo della lunghezza ≤2*	N / A
Buccia/pozzi/macchie/striature/crepe/contaminazione	Nessuno		N / A
Bordo chips/riendi/frattura/piastre esadecimale	Nessuno
Aree politepi	Nessuno	Area cumulativa≤20%	Area cumulativa≤30%
Marcatura laser anteriore	Nessuno
Qualità alla schiena
Finitura posteriore	C-FACE CMP
Graffi	≤5ea/mm, lunghezza cumulativa≤2*diametro	N / A
Difetti posteriori (bordo chip/rientri)	Nessuno
Rugosità posteriore	RA≤0,2 nm (5μm*5μm)
Marcatura laser sul retro	1 mm (dal bordo superiore)
Bordo
Bordo	Smussare
Confezione
Confezione	Prepasto EPI con imballaggio a vuoto Packaging a cassette multi-wafer
*Note ： “NA” significa che nessuna richiesta di richiesta non menzionata può fare riferimento a semi-std.