TaC Coated Epi Wafer Carrier

The TaC Coated Epi Wafer Carrier by Semicera is engineered for superior performance in epitaxial processes. Its tantalum carbide coating offers exceptional durability and high-temperature stability, ensuring optimal wafer support and enhanced production efficiency. Semicera’s precision manufacturing guarantees consistent quality and reliability in semiconductor applications.

TaC coated epitaxial wafer carriers are usually used in the preparation of high-performance optoelectronic devices, power devices, sensors and other fields. This epitaxial wafer carrier refers to the deposition of Tac thin film on the substrate during the crystal growth process to form a wafer with specific structure and performance for subsequent device preparation.

Chemical vapor deposition (CVD) technology is usually used to prepare TaC coated epitaxial wafer carriers. By reacting metal organic precursors and carbon source gases at high temperature, a TaC film can be deposited on the surface of the crystal substrate. This film can have excellent electrical, optical and mechanical properties and is suitable for the preparation of various high-performance devices.

 

Semicera offre rivestimenti specializzati in carburo di tantalum (TAC) per vari componenti e vettori. Il processo di rivestimento leader di semicera consente ai rivestimenti in carburo di tantalum (TAC) per ottenere elevata purezza, stabilità ad alta temperatura e elevata tolleranza chimica, migliorando la qualità del prodotto dei cristalli SIC/GAN e gli strati EPI (EPI (Suscettore TAC rivestito in grafite), and extending the life of key reactor components. The use of tantalum carbide TaC coating is to solve the edge problem and improve the quality of crystal growth, and Semicera has breakthrough solved the tantalum carbide coating technology (CVD), reaching the international advanced level.

 

Dopo anni di sviluppo, Semicera ha conquistato la tecnologia di CVD TAC con gli sforzi congiunti del dipartimento di ricerca e sviluppo. I difetti sono facili da verificarsi nel processo di crescita dei wafer SIC, ma dopo aver utilizzato Tac, the difference is significant. Below is a comparison of wafers with and without TaC, as well as Simicera’ parts for single crystal growth.

WeChat Picture_20240227150045

con e senza tac

WeChat Picture_20240227150053

Dopo aver usato TAC (a destra)

Moreover, Semicera’s TaC-coated products exhibit a longer service life and greater high-temperature resistance compared to SiC coatings. Laboratory measurements have demonstrated that our TaC coatings can consistently perform at temperatures up to 2300 degrees Celsius for extended periods. Below are some examples of our samples:

 

0(1)

Luogo di lavoro semicera

Semicera lavoro posto 2

Macchina per attrezzature

Semicera ware house

Elaborazione della CNN, pulizia chimica, rivestimento CVD

Il nostro servizio

Newletter

In attesa del tuo contatto con noi