Semicera offers a wide range of 4H-8H SiC wafers. For many years, we have been a manufacturer and supplier of products to the semiconductor and photovoltaic industries. Our main products include: Silicon carbide etch plates, silicon carbide boat trailers, silicon carbide wafer boats (PV & Semiconductor), silicon carbide furnace tubes, silicon carbide cantilever paddles, silicon carbide chucks, silicon carbide beams, as well as CVD SiC coatings and TaC coatings. Covering most European and American markets. We look forward to being your long-term partner in China.
Silicon carbide (SiC) single crystal material has a large band gap width (~Si 3 times), high thermal conductivity (~Si 3.3 times or GaAs 10 times), high electron saturation migration rate (~Si 2.5 times), high breakdown electric field (~Si 10 times or GaAs 5 times) and other outstanding characteristics.
Semicera energy can provide customers with high-quality Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; In addition, we can provide customers with homogeneous and heterogeneous silicon carbide epitaxial sheets; We can also customize the epitaxial sheet according to the specific needs of customers, and there is no minimum order quantity.
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Elementi |
Produzione |
Ricerca |
Manichino |
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Parametri cristallini |
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Politipo |
4H |
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Errore di orientamento della superficie |
<11-20 >4±0.15° |
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Parametri elettrici |
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Drogante |
azoto di tipo n |
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Resistività |
0.015-0.025ohm·cm |
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Parametri meccanici |
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Diametro |
99.5 – 100mm |
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Spessore |
350±25 μm |
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Orientamento piatto primario |
[1-100]±5° |
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Lunghezza piatta primaria |
32.5±1.5mm |
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Secondary flat position |
90° CW from primary flat ±5°. silicon face up |
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Secondary flat length |
18±1.5mm |
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TTV |
≤5 μm |
≤10 μm |
≤20 μm |
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LTV |
≤2 μm(5mm*5mm) |
≤5 μm(5mm*5mm) |
N / A |
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Arco |
-15μm ~ 15μm |
-35μm ~ 35μm |
-45μm ~ 45μm |
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Ordito |
≤20 μm |
≤45 μm |
≤50 μm |
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Front (Si-Face) Rughess (AFM) |
Ra≤0.2nm (5μm*5μm) |
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Struttura |
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Densità di micrivipe |
≤1 ea/cm2 |
≤5 ea/cm2 |
≤10 ea/cm2 |
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Impurità dei metalli |
≤5E10atoms/cm2 |
N / A |
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BPD |
≤1500 ea/cm2 |
≤3000 ea/cm2 |
N / A |
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TSD |
≤500 ea/cm2 |
≤1000 ea/cm2 |
N / A |
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Qualità anteriore |
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Davanti |
Si |
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Finitura superficiale |
Si-Face CMP |
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Particelle |
≤60ea/wafer (size≥0.3μm) |
N / A |
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Graffi |
≤2ea/mm. Cumulative length ≤Diameter |
Cumulative length≤2*Diameter |
N / A |
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Buccia/pozzi/macchie/striature/crepe/contaminazione |
Nessuno |
N / A |
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Bordo chips/riendi/frattura/piastre esadecimale |
Nessuno |
N / A |
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Aree politepi |
Nessuno |
Cumulative area≤20% |
Cumulative area≤30% |
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Marcatura laser anteriore |
Nessuno |
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Qualità alla schiena |
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Finitura posteriore |
C-FACE CMP |
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Graffi |
≤5ea/mm,Cumulative length≤2*Diameter |
N / A |
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Difetti posteriori (bordo chip/rientri) |
Nessuno |
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Rugosità posteriore |
Ra≤0.2nm (5μm*5μm) |
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Marcatura laser sul retro |
1 mm (dal bordo superiore) |
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Bordo |
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Bordo |
Smussare |
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Confezione |
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Confezione |
The inner bag is filled with nitrogen and the outer bag is vacuumed. Multi-wafer cassette, epi-ready. |
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*Note ： “NA” significa che nessuna richiesta di richiesta non menzionata può fare riferimento a semi-std. |
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