4″ 6″ High Purity Semi-Insulating SiC Ingot

Semicera’s 4”6” High Purity Semi-Insulating SiC Ingots are meticulously crafted for advanced electronic and optoelectronic applications. Featuring superior thermal conductivity and electrical resistivity, these ingots provide a robust foundation for high-performance devices. Semicera ensures consistent quality and reliability in every product.

Semicera’s 4”6” High Purity Semi-Insulating SiC Ingots are designed to meet the exacting standards of the semiconductor industry. These ingots are produced with a focus on purity and consistency, making them an ideal choice for high-power and high-frequency applications where performance is paramount.

The unique properties of these SiC ingots, including high thermal conductivity and excellent electrical resistivity, make them particularly suited for use in power electronics and microwave devices. Their semi-insulating nature allows for effective heat dissipation and minimal electrical interference, leading to more efficient and reliable components.

Semicera employs state-of-the-art manufacturing processes to produce ingots with exceptional crystal quality and uniformity. This precision ensures that each ingot can be reliably used in sensitive applications, such as high-frequency amplifiers, laser diodes, and other optoelectronic devices.

Available in both 4-inch and 6-inch sizes, Semicera’s SiC ingots provide the flexibility needed for various production scales and technological requirements. Whether for research and development or mass production, these ingots deliver the performance and durability that modern electronic systems demand.

By choosing Semicera’s High Purity Semi-Insulating SiC Ingots, you are investing in a product that combines advanced material science with unparalleled manufacturing expertise. Semicera is dedicated to supporting the innovation and growth of the semiconductor industry, offering materials that enable the development of cutting-edge electronic devices.

Elementi

Produzione

Ricerca

Manichino

Parametri cristallini

Politipo

4H

Errore di orientamento della superficie

4±0.15°

Parametri elettrici

Drogante

azoto di tipo n

Resistività

0,015-0,025ohm · cm

Parametri meccanici

Diametro

150,0 ± 0,2 mm

Spessore

350 ± 25 µm

Orientamento piatto primario

[1-100]±5°

Lunghezza piatta primaria

47,5 ± 1,5 mm

Piatto secondario

Nessuno

TTV

≤5 µm

≤10 µm

≤15 µm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5 mm*5 mm)

≤10 μm (5 mm*5 mm)

Arco

-15μm ~ 15μm

-35μm ~ 35 μm

-45μm ~ 45μm

Ordito

≤35 µm

≤45 µm

≤55 µm

Front (Si-Face) Rughess (AFM)

RA≤0,2 nm (5μm*5μm)

Struttura

Densità di micrivipe

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Impurità dei metalli

≤5E10atoms/cm2

N / A

BPD

≤1500 ea/cm2

≤3000 ea/cm2

N / A

TSD

≤500 ea/cm2

≤1000 ea/cm2

N / A

Qualità anteriore

Davanti

Si

Finitura superficiale

Si-Face CMP

Particelle

≤60ea/wafer (dimensione≥0,3μm)

N / A

Graffi

≤5ea/mm. Lunghezza cumulativa ≤Diameter

Diametro cumulativo della lunghezza ≤2*

N / A

Buccia/pozzi/macchie/striature/crepe/contaminazione

Nessuno

N / A

Bordo chips/riendi/frattura/piastre esadecimale

Nessuno

Aree politepi

Nessuno

Area cumulativa≤20%

Area cumulativa≤30%

Marcatura laser anteriore

Nessuno

Qualità alla schiena

Finitura posteriore

C-FACE CMP

Graffi

≤5ea/mm, lunghezza cumulativa≤2*diametro

N / A

Difetti posteriori (bordo chip/rientri)

Nessuno

Rugosità posteriore

RA≤0,2 nm (5μm*5μm)

Marcatura laser sul retro

1 mm (dal bordo superiore)

Bordo

Bordo

Smussare

Confezione

Confezione

Prepasto EPI con imballaggio a vuoto

Packaging a cassette multi-wafer

*Note : “NA” significa che nessuna richiesta di richiesta non menzionata può fare riferimento a semi-std.

tech_1_2_size

Sic Wafer

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