Semicera’s 4”6” High Purity Semi-Insulating SiC Ingots are meticulously crafted for advanced electronic and optoelectronic applications. Featuring superior thermal conductivity and electrical resistivity, these ingots provide a robust foundation for high-performance devices. Semicera ensures consistent quality and reliability in every product.
Semicera’s 4”6” High Purity Semi-Insulating SiC Ingots are designed to meet the exacting standards of the semiconductor industry. These ingots are produced with a focus on purity and consistency, making them an ideal choice for high-power and high-frequency applications where performance is paramount.
The unique properties of these SiC ingots, including high thermal conductivity and excellent electrical resistivity, make them particularly suited for use in power electronics and microwave devices. Their semi-insulating nature allows for effective heat dissipation and minimal electrical interference, leading to more efficient and reliable components.
Semicera employs state-of-the-art manufacturing processes to produce ingots with exceptional crystal quality and uniformity. This precision ensures that each ingot can be reliably used in sensitive applications, such as high-frequency amplifiers, laser diodes, and other optoelectronic devices.
Available in both 4-inch and 6-inch sizes, Semicera’s SiC ingots provide the flexibility needed for various production scales and technological requirements. Whether for research and development or mass production, these ingots deliver the performance and durability that modern electronic systems demand.
By choosing Semicera’s High Purity Semi-Insulating SiC Ingots, you are investing in a product that combines advanced material science with unparalleled manufacturing expertise. Semicera is dedicated to supporting the innovation and growth of the semiconductor industry, offering materials that enable the development of cutting-edge electronic devices.
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Elementi |
Produzione |
Ricerca |
Manichino |
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Parametri cristallini |
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Politipo |
4H |
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Errore di orientamento della superficie |
4±0.15° |
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Parametri elettrici |
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Drogante |
azoto di tipo n |
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Resistività |
0,015-0,025ohm · cm |
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Parametri meccanici |
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Diametro |
150,0 ± 0,2 mm |
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Spessore |
350 ± 25 µm |
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Orientamento piatto primario |
[1-100]±5° |
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Lunghezza piatta primaria |
47,5 ± 1,5 mm |
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Piatto secondario |
Nessuno |
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TTV |
≤5 µm |
≤10 µm |
≤15 µm |
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LTV |
≤3 μm (5mm*5mm) |
≤5 μm (5 mm*5 mm) |
≤10 μm (5 mm*5 mm) |
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Arco |
-15μm ~ 15μm |
-35μm ~ 35 μm |
-45μm ~ 45μm |
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Ordito |
≤35 µm |
≤45 µm |
≤55 µm |
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Front (Si-Face) Rughess (AFM) |
RA≤0,2 nm (5μm*5μm) |
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Struttura |
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Densità di micrivipe |
<1 ea/cm2 |
<10 ea/cm2 |
<15 ea/cm2 |
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Impurità dei metalli |
≤5E10atoms/cm2 |
N / A |
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BPD |
≤1500 ea/cm2 |
≤3000 ea/cm2 |
N / A |
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TSD |
≤500 ea/cm2 |
≤1000 ea/cm2 |
N / A |
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Qualità anteriore |
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Davanti |
Si |
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Finitura superficiale |
Si-Face CMP |
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Particelle |
≤60ea/wafer (dimensione≥0,3μm) |
N / A |
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Graffi |
≤5ea/mm. Lunghezza cumulativa ≤Diameter |
Diametro cumulativo della lunghezza ≤2* |
N / A |
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Buccia/pozzi/macchie/striature/crepe/contaminazione |
Nessuno |
N / A |
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Bordo chips/riendi/frattura/piastre esadecimale |
Nessuno |
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Aree politepi |
Nessuno |
Area cumulativa≤20% |
Area cumulativa≤30% |
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Marcatura laser anteriore |
Nessuno |
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Qualità alla schiena |
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Finitura posteriore |
C-FACE CMP |
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Graffi |
≤5ea/mm, lunghezza cumulativa≤2*diametro |
N / A |
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Difetti posteriori (bordo chip/rientri) |
Nessuno |
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Rugosità posteriore |
RA≤0,2 nm (5μm*5μm) |
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Marcatura laser sul retro |
1 mm (dal bordo superiore) |
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Bordo |
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Bordo |
Smussare |
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Confezione |
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Confezione |
Prepasto EPI con imballaggio a vuoto Packaging a cassette multi-wafer |
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*Note : “NA” significa che nessuna richiesta di richiesta non menzionata può fare riferimento a semi-std. |
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