Ga2O3 Epitaxy

Ga2O3Epitaxy– Enhance your high-power electronic and optoelectronic devices with Semicera’s Ga2O3Epitaxy, offering unmatched performance and reliability for advanced semiconductor applications.

Semicera proudly offers Ga₂O₃ Epitaxy, a state-of-the-art solution designed to push the boundaries of power electronics and optoelectronics. This advanced epitaxial technology leverages the unique properties of Gallium Oxide (Ga₂O₃) to deliver superior performance in demanding applications.

Caratteristiche chiave:

• Exceptional Wide Bandgap: Ga₂O₃ Epitaxy features an ultra-wide bandgap, allowing for higher breakdown voltages and efficient operation in high-power environments.

• High Thermal Conductivity: The epitaxial layer provides excellent thermal conductivity, ensuring stable operation even under high-temperature conditions, making it ideal for high-frequency devices.

• Superior Material Quality: Achieve high crystal quality with minimal defects, ensuring optimal device performance and longevity, especially in critical applications such as power transistors and UV detectors.

• Versatility in Applications: Perfectly suited for power electronics, RF applications, and optoelectronics, providing a reliable foundation for next-generation semiconductor devices.

Discover the potential of Ga₂O₃ Epitaxy with Semicera’s innovative solutions. Our epitaxial products are designed to meet the highest standards of quality and performance, enabling your devices to operate with maximum efficiency and reliability. Choose Semicera for cutting-edge semiconductor technology.

Elementi	Produzione	Ricerca	Manichino
Parametri cristallini
Politipo	4H
Errore di orientamento della superficie	4±0.15°
Parametri elettrici
Drogante	azoto di tipo n
Resistività	0,015-0,025ohm · cm
Parametri meccanici
Diametro	150,0 ± 0,2 mm
Spessore	350 ± 25 µm
Orientamento piatto primario	[1-100]±5°
Lunghezza piatta primaria	47,5 ± 1,5 mm
Piatto secondario	Nessuno
TTV	≤5 µm	≤10 µm	≤15 µm
LTV	≤3 μm (5mm*5mm)	≤5 μm (5 mm*5 mm)	≤10 μm (5 mm*5 mm)
Arco	-15μm ~ 15μm	-35μm ~ 35 μm	-45μm ~ 45μm
Ordito	≤35 µm	≤45 µm	≤55 µm
Front (Si-Face) Rughess (AFM)	RA≤0,2 nm (5μm*5μm)
Struttura
Densità di micrivipe	<1 ea/cm2	<10 ea/cm2	<15 ea/cm2
Impurità dei metalli	≤5E10atoms/cm2		N / A
BPD	≤1500 ea/cm2	≤3000 ea/cm2	N / A
TSD	≤500 ea/cm2	≤1000 ea/cm2	N / A
Qualità anteriore
Davanti	Si
Finitura superficiale	Si-Face CMP
Particelle	≤60ea/wafer (dimensione≥0,3μm)	N / A
Graffi	≤5ea/mm. Lunghezza cumulativa ≤Diameter	Diametro cumulativo della lunghezza ≤2*	N / A
Buccia/pozzi/macchie/striature/crepe/contaminazione	Nessuno		N / A
Bordo chips/riendi/frattura/piastre esadecimale	Nessuno
Aree politepi	Nessuno	Area cumulativa≤20%	Area cumulativa≤30%
Marcatura laser anteriore	Nessuno
Qualità alla schiena
Finitura posteriore	C-FACE CMP
Graffi	≤5ea/mm, lunghezza cumulativa≤2*diametro	N / A
Difetti posteriori (bordo chip/rientri)	Nessuno
Rugosità posteriore	RA≤0,2 nm (5μm*5μm)
Marcatura laser sul retro	1 mm (dal bordo superiore)
Bordo
Bordo	Smussare
Confezione
Confezione	Prepasto EPI con imballaggio a vuoto Packaging a cassette multi-wafer
*Note ： “NA” significa che nessuna richiesta di richiesta non menzionata può fare riferimento a semi-std.