Semicera offers a comprehensive range of susceptors and graphite components designed for various epitaxy reactors.Through strategic partnerships with industry-leading OEMs, extensive materials expertise, and advanced manufacturing capabilities, Semicera delivers tailored designs to meet the specific requirements of your application. Our commitment to excellence ensures that you receive optimal solutions for your epitaxy reactor needs.
Our company provides SiC coating process services on the surface of graphite, ceramics and other materials by CVD method, so that special gases containing carbon and silicon can react at high temperature to obtain high-purity Sic molecules, which can be deposited on the surface of coated materials to form a SiC protective layer for epitaxy barrel type hy pnotic.
Caratteristiche principali:
1. Alta purezza SIC con la grafite rivestita
2. Resistenza al calore superiore e uniformità termica
3. cristallo SiC fine rivestito per una superficie liscia
4. alta durata contro la pulizia chimica
Specifiche principali del rivestimento CVD-SIC
|
Proprietà SIC-CVD |
||
| Struttura cristallina | FCC β phase | |
| Densità | g/cm ³ | 3.21 |
| Durezza | Vickers Durezza | 2500 |
| Dimensione del grano | μm | 2~10 |
| Purezza chimica | % | 99.99995 |
| Capacità termica | J·kg-1 ·K-1 | 640 |
| Temperatura di sublimazione | ℃ | 2700 |
| Forza felexurale | MPa (RT 4-point) | 415 |
| Young’ s Modulus | Gpa (4pt bend, 1300℃) | 430 |
| Espansione termica (CTE) | 10-6K-1 | 4.5 |
| Conducibilità termica | (W/MK) | 300 |
