Silicon-Impregnated Silicon Carbide (SiC) Paddle and Wafer Carrier is a high-performance composite material formed by infiltrating silicon into a recrystallized silicon carbide matrix and undergoing special treatment. This material combines the high strength and high temperature tolerance of recrystallized silicon carbide with the enhanced performance of silicon infiltration, and exhibits excellent performance under extreme conditions. It is widely used in the field of semiconductor heat treatment, especially in environments requiring high temperature, high pressure and high wear resistance, and is an ideal material for manufacturing heat treatment parts in the semiconductor production process.
The Silicon-Impregnated Silicon Carbide (SiC) Paddle and Wafer Carrier is engineered to meet the demanding requirements of semiconductor thermal processing applications. Crafted from high-purity SiC and enhanced through silicon impregnation, this product offers a unique combination of high-temperature performance, excellent thermal conductivity, corrosion resistance, and outstanding mechanical strength.
By integrating advanced material science with precision manufacturing, this solution ensures superior performance, reliability, and durability for semiconductor manufacturers.
1. Exceptional High-Temperature Resistance
With a melting point exceeding 2700°C, SiC materials are inherently stable under extreme heat. Silicon impregnation further enhances their thermal stability, allowing them to withstand prolonged exposure to high temperatures without structural weakening or performance degradation.
The exceptional thermal conductivity of silicon-impregnated SiC ensures uniform heat distribution, reducing thermal stress during critical processing stages. This property prolongs equipment lifespan and minimizes production downtime, making it ideal for high-temperature thermal processing.
A robust silicon oxide layer forms naturally on the surface, providing outstanding resistance to oxidation and corrosion. This ensures long-term reliability in harsh operating environments, protecting both the material and surrounding components.
Silicon-impregnated SiC features excellent compressive strength and wear resistance, maintaining its structural integrity under high-load, high-temperature conditions. This reduces the risk of wear-related damage, ensuring consistent performance over extended usage cycles.
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Product Name |
SC-RSiC-Si |
|
Material |
Silicon Impregnation Silicon Carbide Compact (high purity) |
|
Applications |
Semiconductor Heat Treatment Parts, Semiconductor Manufacturing Equipment Parts |
|
Delivery form |
Molded body (Sintered body) |
| Composition | Mechanical Property | Young’s Modulus (GPa) |
Bending Strength (MPa) |
||
| Composition (vol%) | α-SiC | α-SiC | RT | 370 | 250 |
| 82 | 18 | 800°C | 360 | 220 | |
| Bulk Density (kg/m³) | 3.02 x 103 | 1200°C | 340 | 220 | |
| Heatproof Temperature°C | 1350 | Poisson’s Ratio | 0.18(RT) | ||
| Thermal Property |
Thermal Conductivity (W/(m· K)) |
Specific Heat Capacity (kJ/(kg·K)) |
Coefficiente di espansione termica (1/K) |
||
| RT | 220 | 0.7 | RT~700°C | 3.4 x 10-6 | |
| 700°C | 60 | 1.23 | 700~1200°C | 4.3 x10-6 | |
| Impurity Content ((ppm) | |||||||||||||
|
Element |
Fe | Ni | Na | K | Mg | Ca | Cr |
Mn |
Zn | Cu | Ti | Va | Ai |
| Content Rate | 3 | <2 | <0.5 | <0.1 | <1 | 5 | 0.3 | <0.1 | <0.1 | <0.1 | <0.3 | <0.3 | 25 |
▪ Semiconductor Thermal Processing: Ideal for processes such as chemical vapor deposition (CVD), epitaxial growth, and annealing, where precise temperature control and material durability are critical.
▪ Wafer Carriers & Paddles: Designed to securely hold and transport wafers during high-temperature thermal treatments.
▪ Extreme Operating Environments: Suitable for settings requiring resistance to heat, chemical exposure, and mechanical stress.
The combination of high-purity silicon carbide and advanced silicon impregnation technology delivers unparalleled performance benefits:
▪ Precision: Enhances the accuracy and control of semiconductor processing.
▪ Stability: Withstands harsh environments without compromising functionality.
▪ Longevity: Extends the service life of semiconductor manufacturing equipment.
▪ Efficiency: Improves productivity by ensuring reliable and consistent results.
At Semicera, we specialize in providing high-performance solutions tailored to the needs of semiconductor manufacturers. Our Silicon-Impregnated Silicon Carbide Paddle and Wafer Carrier undergo rigorous testing and quality assurance to meet industry standards. By choosing Semicera, you gain access to cutting-edge materials designed to optimize your manufacturing processes and enhance your production capabilities.
▪ Material Composition: High-purity silicon carbide with silicon impregnation.
▪ Operating Temperature Range: Up to 2700°C.
▪ Thermal Conductivity: Exceptionally high for uniform heat distribution.
▪ Resistance Properties: Oxidation, corrosion, and wear-resistant.
Ready to elevate your semiconductor manufacturing process? Contact Semicera today to learn more about our Silicon-Impregnated Silicon Carbide Paddle and Wafer Carrier.
▪ Email: sales01@semi-cera.com/sales05@semi-cera.com
▪ Phone: +86-0574-8650 3783
▪ Location: No.1958 Jiangnan Road, Ningbo High tech, Zone, Zhejiang Province, 315201, China
