Graphite is an excellent high-temperature material, but it oxidizes easily at high temperatures. Even in vacuum furnaces with inert gas, it can still undergo slow oxidation. Using a CVD tantalum carbide (TaC) coating can effectively protect the graphite substrate, providing the same high-temperature resistance as graphite. TaC is also an inert material, meaning it will not react with gases such as argon or hydrogen at high temperatures. Inquiry Tantalum Carbide (TaC) Coating Plate now!
Semicera offre rivestimenti specializzati in carburo di tantalum (TAC) per vari componenti e vettori. Il processo di rivestimento leader di semicera consente ai rivestimenti in carburo di tantalum (TAC) per ottenere elevata purezza, stabilità ad alta temperatura e elevata tolleranza chimica, migliorando la qualità del prodotto dei cristalli SIC/GAN e gli strati EPI (EPI (Suscettore TAC rivestito in grafite), and extending the life of key reactor components. The use of tantalum carbide TaC coating is to solve the edge problem and improve the quality of crystal growth, and Semicera has breakthrough solved the tantalum carbide coating technology (CVD), reaching the international advanced level.
Dopo anni di sviluppo, Semicera ha conquistato la tecnologia di CVD TAC con gli sforzi congiunti del dipartimento di ricerca e sviluppo. I difetti sono facili da verificarsi nel processo di crescita dei wafer SIC, ma dopo aver utilizzato Tac, the difference is significant. Below is a comparison of wafers with and without TaC, as well as Simicera’ parts for single crystal growth.
Moreover, Semicera’s TaC-coated products exhibit a longer service life and greater high-temperature resistance compared to SiC coatings. Laboratory measurements have demonstrated that our TaC coatings can consistently perform at temperatures up to 2300 degrees Celsius for extended periods. Below are some examples of our samples:
