With the advent of 8-inch silicon carbide (SiC) wafers, the requirements for various semiconductor processes have become increasingly stringent, especially for epitaxy processes where temperatures can exceed 2000 degrees Celsius. Traditional susceptor materials, such as graphite coated with silicon carbide, tend to sublimate at these high temperatures, disrupting the epitaxy process. However, CVD tantalum carbide (TaC) effectively addresses this issue, withstanding temperatures up to 2300 degrees Celsius and offering a longer service life. Contact Semicera’sTantalum Carbide TaC CVD Coating Custom Partsto explore more about our advanced solutions.
Semicera offre rivestimenti specializzati in carburo di tantalum (TAC) per vari componenti e vettori. Il processo di rivestimento leader di semicera consente ai rivestimenti in carburo di tantalum (TAC) per ottenere elevata purezza, stabilità ad alta temperatura e elevata tolleranza chimica, migliorando la qualità del prodotto dei cristalli SIC/GAN e gli strati EPI (EPI (Suscettore TAC rivestito in grafite), and extending the life of key reactor components. The use of tantalum carbide TaC coating is to solve the edge problem and improve the quality of crystal growth, and Semicera has breakthrough solved the tantalum carbide coating technology (CVD), reaching the international advanced level.
With the advent of 8-inch silicon carbide (SiC) wafers, the requirements for various semiconductor processes have become increasingly stringent, especially for epitaxy processes where temperatures can exceed 2000 degrees Celsius. Traditional susceptor materials, such as graphite coated with silicon carbide, tend to sublimate at these high temperatures, disrupting the epitaxy process. However, CVD tantalum carbide (TaC) effectively addresses this issue, withstanding temperatures up to 2300 degrees Celsius and offering a longer service life. Contact Semicera’s Tantalum Carbide TaC CVD Coating Custom Parts to explore more about our advanced solutions.
Dopo anni di sviluppo, Semicera ha conquistato la tecnologia di CVD TAC con gli sforzi congiunti del dipartimento di ricerca e sviluppo. I difetti sono facili da verificarsi nel processo di crescita dei wafer SIC, ma dopo aver utilizzato Tac, the difference is significant. Below is a comparison of wafers with and without TaC, as well as Simicera’ parts for single crystal growth.
Moreover, Semicera’s TaC-coated products exhibit a longer service life and greater high-temperature resistance compared to SiC coatings. Laboratory measurements have demonstrated that our TaC coatings can consistently perform at temperatures up to 2300 degrees Celsius for extended periods. Below are some examples of our samples:
