{"id":1393,"date":"2025-09-11T05:28:53","date_gmt":"2025-09-11T05:28:53","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/si-epitaxy\/"},"modified":"2026-04-29T15:33:43","modified_gmt":"2026-04-29T07:33:43","slug":"si-epitaxy","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/it\/product\/si-epitaxy\/","title":{"rendered":"Si epitaxy"},"content":{"rendered":"
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Semicera<\/em> introduces its high-quality Si epitaxy<\/strong> services, designed to meet the exacting standards of today\u2019s semiconductor industry. Epitaxial silicon layers are critical for the performance and reliability of electronic devices, and our Si Epitaxy solutions ensure that your components achieve optimal functionality.<\/span><\/p>\n

Precision-Grown Silicon Layers<\/strong> Semicera<\/em> understands that the foundation of high-performance devices lies in the quality of the materials used. Our Si epitaxy<\/strong> process is meticulously controlled to produce silicon layers with exceptional uniformity and crystal integrity. These layers are essential for applications ranging from microelectronics to advanced power devices, where consistency and reliability are paramount.<\/span><\/p>\n

Optimized for Device Performance<\/strong> IL Si epitaxy<\/strong> services offered by Semicera are tailored to enhance the electrical properties of your devices. By growing high-purity silicon layers with low defect densities, we ensure that your components perform at their best, with improved carrier mobility and minimized electrical resistivity. This optimization is critical for achieving the high-speed and high-efficiency characteristics demanded by modern technology.<\/span><\/p>\n

Versatility in Applications<\/strong> Semicera<\/em>\u2019s Si epitaxy<\/strong> is suitable for a wide range of applications, including the production of CMOS transistors, power MOSFETs, and bipolar junction transistors. Our flexible process allows for customization based on the specific requirements of your project, whether you need thin layers for high-frequency applications or thicker layers for power devices.<\/span><\/p>\n

Superior Material Quality<\/strong> Quality is at the heart of everything we do at Semicera. Our Si epitaxy<\/strong> process uses state-of-the-art equipment and techniques to ensure that each silicon layer meets the highest standards of purity and structural integrity. This attention to detail minimizes the occurrence of defects that could impact device performance, resulting in more reliable and longer-lasting components.<\/span><\/p>\n

Commitment to Innovation<\/strong> Semicera<\/em> is committed to staying at the forefront of semiconductor technology. Our Si epitaxy<\/strong> services reflect this commitment, incorporating the latest advancements in epitaxial growth techniques. We continuously refine our processes to deliver silicon layers that meet the evolving needs of the industry, ensuring that your products remain competitive in the market.<\/span><\/p>\n

Tailored Solutions for Your Needs<\/strong> Understanding that every project is unique, Semicera<\/em> offers customized Si epitaxy<\/strong> solutions to match your specific needs. Whether you require particular doping profiles, layer thicknesses, or surface finishes, our team works closely with you to deliver a product that meets your precise specifications.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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Elementi<\/p>\n<\/td>\n

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Produzione<\/p>\n<\/td>\n

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Ricerca<\/p>\n<\/td>\n

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Manichino<\/p>\n<\/td>\n<\/tr>\n

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Parametri cristallini<\/p>\n<\/td>\n<\/tr>\n

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Politipo<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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Errore di orientamento della superficie<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Parametri elettrici<\/p>\n<\/td>\n<\/tr>\n

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Drogante<\/p>\n<\/td>\n

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azoto di tipo n<\/p>\n<\/td>\n<\/tr>\n

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Resistivit\u00e0<\/p>\n<\/td>\n

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0,015-0,025ohm \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Parametri meccanici<\/p>\n<\/td>\n<\/tr>\n

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Diametro<\/p>\n<\/td>\n

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150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

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Spessore<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Orientamento piatto primario<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Lunghezza piatta primaria<\/p>\n<\/td>\n

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47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

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Piatto secondario<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n<\/tr>\n

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Arco<\/p>\n<\/td>\n

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-15\u03bcm ~ 15\u03bcm<\/p>\n<\/td>\n

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-35\u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

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-45\u03bcm ~ 45\u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Ordito<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Front (Si-Face) Rughess (AFM)<\/p>\n<\/td>\n

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RA\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Struttura<\/p>\n<\/td>\n<\/tr>\n

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Densit\u00e0 di micrivipe<\/p>\n<\/td>\n

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<1 ea\/cm2<\/p>\n<\/td>\n

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<10 ea\/cm2<\/p>\n<\/td>\n

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<15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

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Impurit\u00e0 dei metalli<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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BPD<\/p>\n<\/td>\n

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\u22641500 ea\/cm2<\/p>\n<\/td>\n

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\u22643000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 ea\/cm2<\/p>\n<\/td>\n

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\u22641000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Qualit\u00e0 anteriore<\/p>\n<\/td>\n<\/tr>\n

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Davanti<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Finitura superficiale<\/p>\n<\/td>\n

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Si-Face CMP<\/p>\n<\/td>\n<\/tr>\n

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Particelle<\/p>\n<\/td>\n

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\u226460ea\/wafer (dimensione\u22650,3\u03bcm)<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Graffi<\/p>\n<\/td>\n

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\u22645ea\/mm. Lunghezza cumulativa \u2264Diameter<\/p>\n<\/td>\n

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Diametro cumulativo della lunghezza \u22642*<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Buccia\/pozzi\/macchie\/striature\/crepe\/contaminazione<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Bordo chips\/riendi\/frattura\/piastre esadecimale<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n<\/tr>\n

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Aree politepi<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n

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Area cumulativa\u226420%<\/p>\n<\/td>\n

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Area cumulativa\u226430%<\/p>\n<\/td>\n<\/tr>\n

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Marcatura laser anteriore<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n<\/tr>\n

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Qualit\u00e0 alla schiena<\/p>\n<\/td>\n<\/tr>\n

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Finitura posteriore<\/p>\n<\/td>\n

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C-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

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Graffi<\/p>\n<\/td>\n

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\u22645ea\/mm, lunghezza cumulativa\u22642*diametro<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Difetti posteriori (bordo chip\/rientri)<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n<\/tr>\n

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Rugosit\u00e0 posteriore<\/p>\n<\/td>\n

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RA\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Marcatura laser sul retro<\/p>\n<\/td>\n

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1 mm (dal bordo superiore)<\/p>\n<\/td>\n<\/tr>\n

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Bordo<\/p>\n<\/td>\n<\/tr>\n

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Bordo<\/p>\n<\/td>\n

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Smussare<\/p>\n<\/td>\n<\/tr>\n

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Confezione<\/p>\n<\/td>\n<\/tr>\n

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Confezione<\/p>\n<\/td>\n

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Prepasto EPI con imballaggio a vuoto<\/p>\n

Packaging a cassette multi-wafer<\/p>\n<\/td>\n<\/tr>\n

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*Note \uff1a \u201cNA\u201d significa che nessuna richiesta di richiesta non menzionata pu\u00f2 fare riferimento a semi-std.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"Sic <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Si Epitaxy\u2013 Achieve superior device performance with Semicera\u2019s Si Epitaxy, offering precision-grown silicon layers for advanced semiconductor applications.<\/p>","protected":false},"featured_media":1027,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[52,26],"product_tag":[],"class_list":{"0":"post-1393","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-epi-wafer","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product\/1393","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/comments?post=1393"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/media\/1027"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/media?parent=1393"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product_brand?post=1393"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product_cat?post=1393"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product_tag?post=1393"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}