{"id":1398,"date":"2025-09-11T05:28:53","date_gmt":"2025-09-11T05:28:53","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/850v-high-power-gan-on-si-epi-wafer\/"},"modified":"2026-04-29T15:33:45","modified_gmt":"2026-04-29T07:33:45","slug":"850v-high-power-gan-on-si-epi-wafer","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/it\/product\/850v-high-power-gan-on-si-epi-wafer\/","title":{"rendered":"850V High Power GaN-on-Si Epi Wafer"},"content":{"rendered":"
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Semicera<\/em> introduces the 850V High Power GaN-on-Si Epi Wafer<\/strong>, a breakthrough in semiconductor innovation. This advanced epi wafer combines the high efficiency of Gallium Nitride (GaN) with the cost-effectiveness of Silicon (Si), creating a powerful solution for high-voltage applications.<\/span><\/p>\n

Caratteristiche chiave:<\/span><\/strong><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0<\/span>High Voltage Handling<\/strong>: Engineered to support up to 850V, this GaN-on-Si Epi Wafer is ideal for demanding power electronics, enabling higher efficiency and performance.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0<\/span>Enhanced Power Density<\/strong>: With superior electron mobility and thermal conductivity, GaN technology allows for compact designs and increased power density.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0<\/span>Cost-Effective Solution<\/strong>: By leveraging silicon as the substrate, this epi wafer offers a cost-effective alternative to traditional GaN wafers, without compromising on quality or performance.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0<\/span>Wide Application Range<\/strong>: Perfect for use in power converters, RF amplifiers, and other high-power electronic devices, ensuring reliability and durability.<\/span><\/p>\n

Explore the future of high-voltage technology with Semicera\u2019s 850V High Power GaN-on-Si Epi Wafer<\/strong>. Designed for cutting-edge applications, this product ensures your electronic devices operate with maximum efficiency and reliability. Choose Semicera for your next-generation semiconductor needs.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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Elementi<\/p>\n<\/td>\n

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Produzione<\/p>\n<\/td>\n

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Ricerca<\/p>\n<\/td>\n

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Manichino<\/p>\n<\/td>\n<\/tr>\n

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Parametri cristallini<\/p>\n<\/td>\n<\/tr>\n

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Politipo<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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Errore di orientamento della superficie<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Parametri elettrici<\/p>\n<\/td>\n<\/tr>\n

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Drogante<\/p>\n<\/td>\n

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azoto di tipo n<\/p>\n<\/td>\n<\/tr>\n

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Resistivit\u00e0<\/p>\n<\/td>\n

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0,015-0,025ohm \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Parametri meccanici<\/p>\n<\/td>\n<\/tr>\n

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Diametro<\/p>\n<\/td>\n

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150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

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Spessore<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Orientamento piatto primario<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Lunghezza piatta primaria<\/p>\n<\/td>\n

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47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

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Piatto secondario<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n<\/tr>\n

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Arco<\/p>\n<\/td>\n

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-15\u03bcm ~ 15\u03bcm<\/p>\n<\/td>\n

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-35\u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

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-45\u03bcm ~ 45\u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Ordito<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Front (Si-Face) Rughess (AFM)<\/p>\n<\/td>\n

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RA\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Struttura<\/p>\n<\/td>\n<\/tr>\n

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Densit\u00e0 di micrivipe<\/p>\n<\/td>\n

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<1 ea\/cm2<\/p>\n<\/td>\n

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<10 ea\/cm2<\/p>\n<\/td>\n

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<15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

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Impurit\u00e0 dei metalli<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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BPD<\/p>\n<\/td>\n

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\u22641500 ea\/cm2<\/p>\n<\/td>\n

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\u22643000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 ea\/cm2<\/p>\n<\/td>\n

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\u22641000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Qualit\u00e0 anteriore<\/p>\n<\/td>\n<\/tr>\n

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Davanti<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Finitura superficiale<\/p>\n<\/td>\n

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Si-Face CMP<\/p>\n<\/td>\n<\/tr>\n

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Particelle<\/p>\n<\/td>\n

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\u226460ea\/wafer (dimensione\u22650,3\u03bcm)<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Graffi<\/p>\n<\/td>\n

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\u22645ea\/mm. Lunghezza cumulativa \u2264Diameter<\/p>\n<\/td>\n

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Diametro cumulativo della lunghezza \u22642*<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Buccia\/pozzi\/macchie\/striature\/crepe\/contaminazione<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Bordo chips\/riendi\/frattura\/piastre esadecimale<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n<\/tr>\n

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Aree politepi<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n

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Area cumulativa\u226420%<\/p>\n<\/td>\n

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Area cumulativa\u226430%<\/p>\n<\/td>\n<\/tr>\n

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Marcatura laser anteriore<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n<\/tr>\n

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Qualit\u00e0 alla schiena<\/p>\n<\/td>\n<\/tr>\n

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Finitura posteriore<\/p>\n<\/td>\n

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C-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

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Graffi<\/p>\n<\/td>\n

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\u22645ea\/mm, lunghezza cumulativa\u22642*diametro<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Difetti posteriori (bordo chip\/rientri)<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n<\/tr>\n

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Rugosit\u00e0 posteriore<\/p>\n<\/td>\n

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RA\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Marcatura laser sul retro<\/p>\n<\/td>\n

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1 mm (dal bordo superiore)<\/p>\n<\/td>\n<\/tr>\n

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Bordo<\/p>\n<\/td>\n<\/tr>\n

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Bordo<\/p>\n<\/td>\n

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Smussare<\/p>\n<\/td>\n<\/tr>\n

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Confezione<\/p>\n<\/td>\n<\/tr>\n

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Confezione<\/p>\n<\/td>\n

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Prepasto EPI con imballaggio a vuoto<\/p>\n

Packaging a cassette multi-wafer<\/p>\n<\/td>\n<\/tr>\n

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*Note \uff1a \u201cNA\u201d significa che nessuna richiesta di richiesta non menzionata pu\u00f2 fare riferimento a semi-std.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"Sic <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

850V High Power GaN-on-Si Epi Wafer\u2013 Discover the next generation of semiconductor technology with Semicera\u2019s 850V High Power GaN-on-Si Epi Wafer, designed for superior performance and efficiency in high-voltage applications.<\/p>","protected":false},"featured_media":835,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[54,26],"product_tag":[],"class_list":{"0":"post-1398","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-gallium-oxide-ga203","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product\/1398","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/comments?post=1398"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/media\/835"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/media?parent=1398"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product_brand?post=1398"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product_cat?post=1398"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product_tag?post=1398"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}