{"id":1410,"date":"2025-09-11T05:28:53","date_gmt":"2025-09-11T05:28:53","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/silicon-on-insulator-wafer\/"},"modified":"2026-04-29T15:33:50","modified_gmt":"2026-04-29T07:33:50","slug":"silicon-on-insulator-wafer","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/it\/product\/silicon-on-insulator-wafer\/","title":{"rendered":"Silicon On Insulator Wafer"},"content":{"rendered":"
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Semicera\u2019s Silicon On Insulator (SOI) Wafer is at the forefront of semiconductor innovation, offering enhanced electrical isolation and superior thermal performance. The SOI structure, consisting of a thin silicon layer on an insulating substrate, provides critical benefits for high-performance electronic devices.<\/p>\n

Our SOI wafers are designed to minimize parasitic capacitance and leakage currents, which is essential for developing high-speed and low-power integrated circuits. This advanced technology ensures that devices operate more efficiently, with improved speed and reduced energy consumption, crucial for modern electronics.<\/p>\n

The advanced manufacturing processes employed by Semicera guarantee the production of SOI wafers with excellent uniformity and consistency. This quality is vital for applications in telecommunications, automotive, and consumer electronics, where reliable and high-performing components are required.<\/p>\n

In addition to their electrical benefits, Semicera\u2019s SOI wafers offer superior thermal insulation, enhancing heat dissipation and stability in high-density and high-power devices. This feature is particularly valuable in applications that involve significant heat generation and require effective thermal management.<\/p>\n

By choosing Semicera\u2019s Silicon On Insulator Wafer, you invest in a product that supports the advancement of cutting-edge technologies. Our commitment to quality and innovation ensures that our SOI wafers meet the rigorous demands of today\u2019s semiconductor industry, providing the foundation for next-generation electronic devices.<\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
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Elementi<\/p>\n<\/td>\n

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Produzione<\/p>\n<\/td>\n

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Ricerca<\/p>\n<\/td>\n

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Manichino<\/p>\n<\/td>\n<\/tr>\n

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Parametri cristallini<\/p>\n<\/td>\n<\/tr>\n

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Politipo<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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Errore di orientamento della superficie<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Parametri elettrici<\/p>\n<\/td>\n<\/tr>\n

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Drogante<\/p>\n<\/td>\n

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azoto di tipo n<\/p>\n<\/td>\n<\/tr>\n

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Resistivit\u00e0<\/p>\n<\/td>\n

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0,015-0,025ohm \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Parametri meccanici<\/p>\n<\/td>\n<\/tr>\n

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Diametro<\/p>\n<\/td>\n

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150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

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Spessore<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Orientamento piatto primario<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Lunghezza piatta primaria<\/p>\n<\/td>\n

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47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

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Piatto secondario<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n<\/tr>\n

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Arco<\/p>\n<\/td>\n

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-15\u03bcm ~ 15\u03bcm<\/p>\n<\/td>\n

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-35\u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

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-45\u03bcm ~ 45\u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Ordito<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Front (Si-Face) Rughess (AFM)<\/p>\n<\/td>\n

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RA\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Struttura<\/p>\n<\/td>\n<\/tr>\n

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Densit\u00e0 di micrivipe<\/p>\n<\/td>\n

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<1 ea\/cm2<\/p>\n<\/td>\n

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<10 ea\/cm2<\/p>\n<\/td>\n

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<15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

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Impurit\u00e0 dei metalli<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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BPD<\/p>\n<\/td>\n

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\u22641500 ea\/cm2<\/p>\n<\/td>\n

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\u22643000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 ea\/cm2<\/p>\n<\/td>\n

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\u22641000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Qualit\u00e0 anteriore<\/p>\n<\/td>\n<\/tr>\n

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Davanti<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Finitura superficiale<\/p>\n<\/td>\n

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Si-Face CMP<\/p>\n<\/td>\n<\/tr>\n

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Particelle<\/p>\n<\/td>\n

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\u226460ea\/wafer (dimensione\u22650,3\u03bcm)<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Graffi<\/p>\n<\/td>\n

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\u22645ea\/mm. Lunghezza cumulativa \u2264Diameter<\/p>\n<\/td>\n

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Diametro cumulativo della lunghezza \u22642*<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Buccia\/pozzi\/macchie\/striature\/crepe\/contaminazione<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Bordo chips\/riendi\/frattura\/piastre esadecimale<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n<\/tr>\n

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Aree politepi<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n

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Area cumulativa\u226420%<\/p>\n<\/td>\n

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Area cumulativa\u226430%<\/p>\n<\/td>\n<\/tr>\n

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Marcatura laser anteriore<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n<\/tr>\n

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Qualit\u00e0 alla schiena<\/p>\n<\/td>\n<\/tr>\n

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Finitura posteriore<\/p>\n<\/td>\n

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C-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

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Graffi<\/p>\n<\/td>\n

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\u22645ea\/mm, lunghezza cumulativa\u22642*diametro<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Difetti posteriori (bordo chip\/rientri)<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n<\/tr>\n

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Rugosit\u00e0 posteriore<\/p>\n<\/td>\n

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RA\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Marcatura laser sul retro<\/p>\n<\/td>\n

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1 mm (dal bordo superiore)<\/p>\n<\/td>\n<\/tr>\n

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Bordo<\/p>\n<\/td>\n<\/tr>\n

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Bordo<\/p>\n<\/td>\n

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Smussare<\/p>\n<\/td>\n<\/tr>\n

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Confezione<\/p>\n<\/td>\n<\/tr>\n

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Confezione<\/p>\n<\/td>\n

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Prepasto EPI con imballaggio a vuoto<\/p>\n

Packaging a cassette multi-wafer<\/p>\n<\/td>\n<\/tr>\n

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*Note \uff1a \u201cNA\u201d significa che nessuna richiesta di richiesta non menzionata pu\u00f2 fare riferimento a semi-std.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Sic <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Semicera\u2019s Silicon On Insulator (SOI) Wafer provides exceptional electrical isolation and thermal management for high-performance applications. Engineered to deliver superior device efficiency and reliability, these wafers are a prime choice for advanced semiconductor technology. Choose Semicera for cutting-edge SOI wafer solutions.<\/p>","protected":false},"featured_media":876,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[35,26],"product_tag":[],"class_list":{"0":"post-1410","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-sic-substrate","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product\/1410","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/comments?post=1410"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/media\/876"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/media?parent=1410"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product_brand?post=1410"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product_cat?post=1410"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product_tag?post=1410"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}