{"id":1412,"date":"2025-09-11T05:29:00","date_gmt":"2025-09-11T05:29:00","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/6-inch-n-type-sic-wafer\/"},"modified":"2026-04-29T15:33:35","modified_gmt":"2026-04-29T07:33:35","slug":"6-inch-n-type-sic-wafer","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/it\/product\/6-inch-n-type-sic-wafer\/","title":{"rendered":"6 Inch N-type SiC Wafer"},"content":{"rendered":"
\n
\n
\n
\n
\n
\n
\n
\n
\n
\n

Semicera\u2019s 6 Inch N-type SiC Wafer stands at the forefront of semiconductor technology. Crafted for optimal performance, this wafer excels in high-power, high-frequency, and high-temperature applications, essential for advanced electronic devices.<\/span><\/p>\n

Our 6 Inch N-type SiC wafer features high electron mobility and low on-resistance, which are critical parameters for power devices such as MOSFETs, diodes, and other components. These properties ensure efficient energy conversion and reduced heat generation, enhancing the performance and lifespan of electronic systems.<\/span><\/p>\n

Semicera\u2019s rigorous quality control processes ensure that each SiC wafer maintains excellent surface flatness and minimal defects. This meticulous attention to detail ensures that our wafers meet the stringent requirements of industries such as automotive, aerospace, and telecommunications.<\/span><\/p>\n

In addition to its superior electrical properties, the N-type SiC wafer offers robust thermal stability and resistance to high temperatures, making it ideal for environments where conventional materials might fail. This capability is particularly valuable in applications involving high-frequency and high-power operations.<\/span><\/p>\n

By choosing Semicera\u2019s 6 Inch N-type SiC Wafer, you are investing in a product that represents the pinnacle of semiconductor innovation. We are committed to providing the building blocks for cutting-edge devices, ensuring that our partners in various industries have access to the best materials for their technological advancements.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

\n
\n
\n
\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\n

Elementi<\/p>\n<\/td>\n

\n

Produzione<\/p>\n<\/td>\n

\n

Ricerca<\/p>\n<\/td>\n

\n

Manichino<\/p>\n<\/td>\n<\/tr>\n

\n

Parametri cristallini<\/p>\n<\/td>\n<\/tr>\n

\n

Politipo<\/p>\n<\/td>\n

\n

4H<\/p>\n<\/td>\n<\/tr>\n

\n

Errore di orientamento della superficie<\/p>\n<\/td>\n

\n

4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

\n

Parametri elettrici<\/p>\n<\/td>\n<\/tr>\n

\n

Drogante<\/p>\n<\/td>\n

\n

azoto di tipo n<\/p>\n<\/td>\n<\/tr>\n

\n

Resistivit\u00e0<\/p>\n<\/td>\n

\n

0,015-0,025ohm \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

\n

Parametri meccanici<\/p>\n<\/td>\n<\/tr>\n

\n

Diametro<\/p>\n<\/td>\n

\n

150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

\n

Spessore<\/p>\n<\/td>\n

\n

350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

\n

Orientamento piatto primario<\/p>\n<\/td>\n

\n

[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

\n

Lunghezza piatta primaria<\/p>\n<\/td>\n

\n

47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

\n

Piatto secondario<\/p>\n<\/td>\n

\n

Nessuno<\/p>\n<\/td>\n<\/tr>\n

\n

TTV<\/p>\n<\/td>\n

\n

\u22645 \u00b5m<\/p>\n<\/td>\n

\n

\u226410 \u00b5m<\/p>\n<\/td>\n

\n

\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

\n

LTV<\/p>\n<\/td>\n

\n

\u22643 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n

\n

\u22645 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

\n

\u226410 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n<\/tr>\n

\n

Arco<\/p>\n<\/td>\n

\n

-15\u03bcm ~ 15\u03bcm<\/p>\n<\/td>\n

\n

-35\u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

\n

-45\u03bcm ~ 45\u03bcm<\/p>\n<\/td>\n<\/tr>\n

\n

Ordito<\/p>\n<\/td>\n

\n

\u226435 \u00b5m<\/p>\n<\/td>\n

\n

\u226445 \u00b5m<\/p>\n<\/td>\n

\n

\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

\n

Front (Si-Face) Rughess (AFM)<\/p>\n<\/td>\n

\n

RA\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

\n

Struttura<\/p>\n<\/td>\n<\/tr>\n

\n

Densit\u00e0 di micrivipe<\/p>\n<\/td>\n

\n

<1 ea\/cm2<\/p>\n<\/td>\n

\n

<10 ea\/cm2<\/p>\n<\/td>\n

\n

<15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

\n

Impurit\u00e0 dei metalli<\/p>\n<\/td>\n

\n

\u22645E10atoms\/cm2<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

BPD<\/p>\n<\/td>\n

\n

\u22641500 ea\/cm2<\/p>\n<\/td>\n

\n

\u22643000 ea\/cm2<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

TSD<\/p>\n<\/td>\n

\n

\u2264500 ea\/cm2<\/p>\n<\/td>\n

\n

\u22641000 ea\/cm2<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

Qualit\u00e0 anteriore<\/p>\n<\/td>\n<\/tr>\n

\n

Davanti<\/p>\n<\/td>\n

\n

Si<\/p>\n<\/td>\n<\/tr>\n

\n

Finitura superficiale<\/p>\n<\/td>\n

\n

Si-Face CMP<\/p>\n<\/td>\n<\/tr>\n

\n

Particelle<\/p>\n<\/td>\n

\n

\u226460ea\/wafer (dimensione\u22650,3\u03bcm)<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

Graffi<\/p>\n<\/td>\n

\n

\u22645ea\/mm. Lunghezza cumulativa \u2264Diameter<\/p>\n<\/td>\n

\n

Diametro cumulativo della lunghezza \u22642*<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

Buccia\/pozzi\/macchie\/striature\/crepe\/contaminazione<\/p>\n<\/td>\n

\n

Nessuno<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

Bordo chips\/riendi\/frattura\/piastre esadecimale<\/p>\n<\/td>\n

\n

Nessuno<\/p>\n<\/td>\n<\/tr>\n

\n

Aree politepi<\/p>\n<\/td>\n

\n

Nessuno<\/p>\n<\/td>\n

\n

Area cumulativa\u226420%<\/p>\n<\/td>\n

\n

Area cumulativa\u226430%<\/p>\n<\/td>\n<\/tr>\n

\n

Marcatura laser anteriore<\/p>\n<\/td>\n

\n

Nessuno<\/p>\n<\/td>\n<\/tr>\n

\n

Qualit\u00e0 alla schiena<\/p>\n<\/td>\n<\/tr>\n

\n

Finitura posteriore<\/p>\n<\/td>\n

\n

C-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

\n

Graffi<\/p>\n<\/td>\n

\n

\u22645ea\/mm, lunghezza cumulativa\u22642*diametro<\/p>\n<\/td>\n

\n

N \/ A<\/p>\n<\/td>\n<\/tr>\n

\n

Difetti posteriori (bordo chip\/rientri)<\/p>\n<\/td>\n

\n

Nessuno<\/p>\n<\/td>\n<\/tr>\n

\n

Rugosit\u00e0 posteriore<\/p>\n<\/td>\n

\n

RA\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

\n

Marcatura laser sul retro<\/p>\n<\/td>\n

\n

1 mm (dal bordo superiore)<\/p>\n<\/td>\n<\/tr>\n

\n

Bordo<\/p>\n<\/td>\n<\/tr>\n

\n

Bordo<\/p>\n<\/td>\n

\n

Smussare<\/p>\n<\/td>\n<\/tr>\n

\n

Confezione<\/p>\n<\/td>\n<\/tr>\n

\n

Confezione<\/p>\n<\/td>\n

\n

Prepasto EPI con imballaggio a vuoto<\/p>\n

Packaging a cassette multi-wafer<\/p>\n<\/td>\n<\/tr>\n

\n

*Note \uff1a \u201cNA\u201d significa che nessuna richiesta di richiesta non menzionata pu\u00f2 fare riferimento a semi-std.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

\n
\n
\n
\n
\n
\n
\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
\n
\n
\n
\n
\n
\n
\"Sic <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Semicera\u2019s 6 Inch N-type SiC Wafer offers outstanding thermal conductivity and high electric field strength, making it a superior choice for power and RF devices. This wafer, tailored to meet industry demands, exemplifies Semicera\u2019s commitment to quality and innovation in semiconductor materials.<\/p>","protected":false},"featured_media":686,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[35,26],"product_tag":[],"class_list":{"0":"post-1412","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-sic-substrate","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product\/1412","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/comments?post=1412"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/media\/686"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/media?parent=1412"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product_brand?post=1412"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product_cat?post=1412"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product_tag?post=1412"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}