{"id":1416,"date":"2025-09-11T05:29:00","date_gmt":"2025-09-11T05:29:00","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/4-inch-n-type-sic-substrate\/"},"modified":"2026-04-29T15:33:37","modified_gmt":"2026-04-29T07:33:37","slug":"4-inch-n-type-sic-substrate","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/it\/product\/4-inch-n-type-sic-substrate\/","title":{"rendered":"4 Inch N-type SiC Substrate"},"content":{"rendered":"
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Semicera\u2019s 4 Inch N-type SiC Substrates are crafted to meet the exacting standards of the semiconductor industry. These substrates provide a high-performance foundation for a wide range of electronic applications, offering exceptional conductivity and thermal properties.<\/span><\/p>\n

The N-type doping of these SiC substrates enhances their electrical conductivity, making them particularly suitable for high-power and high-frequency applications. This property allows for the efficient operation of devices such as diodes, transistors, and amplifiers, where minimizing energy loss is crucial.<\/span><\/p>\n

Semicera utilizes state-of-the-art manufacturing processes to ensure that each substrate exhibits excellent surface quality and uniformity. This precision is critical for applications in power electronics, microwave devices, and other technologies that demand reliable performance under extreme conditions.<\/span><\/p>\n

Incorporating Semicera\u2019s N-type SiC substrates into your production line means benefiting from materials that offer superior heat dissipation and electrical stability. These substrates are ideal for creating components that require durability and efficiency, such as power conversion systems and RF amplifiers.<\/span><\/p>\n

By choosing Semicera\u2019s 4 Inch N-type SiC Substrates, you are investing in a product that combines innovative material science with meticulous craftsmanship. Semicera continues to lead the industry by providing solutions that support the development of cutting-edge semiconductor technologies, ensuring high performance and reliability.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
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Elementi<\/p>\n<\/td>\n

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Produzione<\/p>\n<\/td>\n

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Ricerca<\/p>\n<\/td>\n

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Manichino<\/p>\n<\/td>\n<\/tr>\n

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Parametri cristallini<\/p>\n<\/td>\n<\/tr>\n

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Politipo<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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Errore di orientamento della superficie<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Parametri elettrici<\/p>\n<\/td>\n<\/tr>\n

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Drogante<\/p>\n<\/td>\n

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azoto di tipo n<\/p>\n<\/td>\n<\/tr>\n

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Resistivit\u00e0<\/p>\n<\/td>\n

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0,015-0,025ohm \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Parametri meccanici<\/p>\n<\/td>\n<\/tr>\n

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Diametro<\/p>\n<\/td>\n

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150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

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Spessore<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Orientamento piatto primario<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Lunghezza piatta primaria<\/p>\n<\/td>\n

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47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

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Piatto secondario<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5mm*5mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n<\/tr>\n

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Arco<\/p>\n<\/td>\n

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-15\u03bcm ~ 15\u03bcm<\/p>\n<\/td>\n

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-35\u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

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-45\u03bcm ~ 45\u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Ordito<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Front (Si-Face) Rughess (AFM)<\/p>\n<\/td>\n

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RA\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Struttura<\/p>\n<\/td>\n<\/tr>\n

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Densit\u00e0 di micrivipe<\/p>\n<\/td>\n

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<1 ea\/cm2<\/p>\n<\/td>\n

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<10 ea\/cm2<\/p>\n<\/td>\n

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<15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

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Impurit\u00e0 dei metalli<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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BPD<\/p>\n<\/td>\n

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\u22641500 ea\/cm2<\/p>\n<\/td>\n

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\u22643000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 ea\/cm2<\/p>\n<\/td>\n

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\u22641000 ea\/cm2<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Qualit\u00e0 anteriore<\/p>\n<\/td>\n<\/tr>\n

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Davanti<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Finitura superficiale<\/p>\n<\/td>\n

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Si-Face CMP<\/p>\n<\/td>\n<\/tr>\n

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Particelle<\/p>\n<\/td>\n

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\u226460ea\/wafer (dimensione\u22650,3\u03bcm)<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Graffi<\/p>\n<\/td>\n

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\u22645ea\/mm. Lunghezza cumulativa \u2264Diameter<\/p>\n<\/td>\n

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Diametro cumulativo della lunghezza \u22642*<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Buccia\/pozzi\/macchie\/striature\/crepe\/contaminazione<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Bordo chips\/riendi\/frattura\/piastre esadecimale<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n<\/tr>\n

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Aree politepi<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n

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Area cumulativa\u226420%<\/p>\n<\/td>\n

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Area cumulativa\u226430%<\/p>\n<\/td>\n<\/tr>\n

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Marcatura laser anteriore<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n<\/tr>\n

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Qualit\u00e0 alla schiena<\/p>\n<\/td>\n<\/tr>\n

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Finitura posteriore<\/p>\n<\/td>\n

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C-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

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Graffi<\/p>\n<\/td>\n

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\u22645ea\/mm, lunghezza cumulativa\u22642*diametro<\/p>\n<\/td>\n

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N \/ A<\/p>\n<\/td>\n<\/tr>\n

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Difetti posteriori (bordo chip\/rientri)<\/p>\n<\/td>\n

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Nessuno<\/p>\n<\/td>\n<\/tr>\n

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Rugosit\u00e0 posteriore<\/p>\n<\/td>\n

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RA\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Marcatura laser sul retro<\/p>\n<\/td>\n

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1 mm (dal bordo superiore)<\/p>\n<\/td>\n<\/tr>\n

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Bordo<\/p>\n<\/td>\n<\/tr>\n

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Bordo<\/p>\n<\/td>\n

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Smussare<\/p>\n<\/td>\n<\/tr>\n

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Confezione<\/p>\n<\/td>\n<\/tr>\n

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Confezione<\/p>\n<\/td>\n

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Prepasto EPI con imballaggio a vuoto<\/p>\n

Packaging a cassette multi-wafer<\/p>\n<\/td>\n<\/tr>\n

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*Note \uff1a \u201cNA\u201d significa che nessuna richiesta di richiesta non menzionata pu\u00f2 fare riferimento a semi-std.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Sic <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Semicera\u2019s 4 Inch N-type SiC Substrates are meticulously designed for superior electrical and thermal performance in power electronics and high-frequency applications. These substrates offer excellent conductivity and stability, making them ideal for next-generation semiconductor devices. Trust Semicera for precision and quality in advanced materials.<\/p>","protected":false},"featured_media":879,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[35,26],"product_tag":[],"class_list":{"0":"post-1416","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-sic-substrate","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product\/1416","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/comments?post=1416"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/media\/879"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/media?parent=1416"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product_brand?post=1416"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product_cat?post=1416"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/it\/wp-json\/wp\/v2\/product_tag?post=1416"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}