Semicera offers a comprehensive range of susceptors and graphite components designed for various epitaxy reactors.Through strategic partnerships with industry-leading OEMs, extensive materials expertise, and advanced manufacturing capabilities, Semicera delivers tailored designs to meet the specific requirements of your application. Our commitment to excellence ensures that you receive optimal solutions for your epitaxy reactor needs.
Our company provides SICコーティング process services on the surface of graphite, ceramics and other materials by CVD method, so that special gases containing carbon and silicon can react at high temperature to obtain high-purity Sic molecules, which can be deposited on the surface of coated materials to form a SiC protective layer for epitaxy barrel type hy pnotic.
1. High temperature oxidation resistance:
the oxidation resistance is still very good when the temperature is as high as 1600 C.
2. High purity : made by chemical vapor deposition under high temperature chlorination condition.
3. Erosion resistance: high hardness, compact surface, fine particles.
4. Corrosion resistance: acid, alkali, salt and organic reagents.
| SiC-CVD Properties | ||
| Crystal Structure | FCC β phase | |
| Density | g/cm ³ | 3.21 |
| Hardness | Vickers hardness | 2500 |
| Grain Size | μm | 2~10 |
| Chemical Purity | % | 99.99995 |
| Heat Capacity | J·kg-1 ·K-1 | 640 |
| Sublimation Temperature | ℃ | 2700 |
| Felexural Strength | MPa (RT 4-point) | 415 |
| Young’ s Modulus | Gpa (4pt bend, 1300℃) | 430 |
| Thermal Expansion (C.T.E) | 10-6K-1 | 4.5 |
| Thermal conductivity | (W/mK) | 300 |
