4インチ酸化ガリウム基質

セミセラ proudly introduces its 4″ Gallium Oxide Substrates, a groundbreaking material engineered to meet the growing demands of high-performance semiconductor devices. Gallium Oxide (Ga₂O₃) substrates offer an ultra-wide bandgap, making them ideal for next-generation power electronics, UV optoelectronics, and high-frequency devices.

Key Features:

     • Ultra-Wide Bandgap: The 4″ Gallium Oxide Substrates boast a bandgap of approximately 4.8 eV, allowing for exceptional voltage and temperature tolerance, significantly outperforming traditional semiconductor materials like silicon.

     • High Breakdown Voltage: These substrates enable devices to operate at higher voltages and powers, making them perfect for high-voltage applications in power electronics.

     • Superior Thermal Stability: Gallium Oxide substrates offer excellent thermal conductivity, ensuring stable performance under extreme conditions, ideal for use in demanding environments.

     • High Material Quality: With low defect densities and high crystal quality, these substrates ensure reliable and consistent performance, enhancing the efficiency and durability of your devices.

     • Versatile Application: Suitable for a wide range of applications, including power transistors, Schottky diodes, and UV-C LED devices, enabling innovations in both power and optoelectronic fields.

Explore the future of semiconductor technology with Semicera’s 4″ Gallium Oxide Substrates. Our substrates are designed to support the most advanced applications, providing the reliability and efficiency required for today’s cutting-edge devices. Trust Semicera for quality and innovation in your semiconductor materials.