Product introduction and use: Placed 41 pieces of 4 hours substrate, used for growing LED with blue-green epitaxial filmDevice location of the product: in the reaction chamber, in direct contact with the waferMain downstream products: LED chipsMain end market: LED
Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming a SiC protective layer.
1。高温酸化抵抗:
the oxidation resistance is still very good when the temperature is as high as 1600 ℃.
2。高純度：高温塩素化条件下での化学蒸気堆積によって作られています。
3。侵食抵抗：高硬度、コンパクトな表面、微粒子。
4。耐食性：酸、アルカリ、塩、有機試薬。
| SIC-CVDプロパティ | ||
| 結晶構造 | FCC β phase | |
| 密度 | g/cm ³ | 3.21 |
| 硬度 | ビッカーズの硬さ | 2500 |
| 穀物サイズ | μm | 2~10 |
| 化学純度 | % | 99.99995 |
| 熱容量 | J·kg-1 ·K-1 | 640 |
| 昇華温度 | ℃ | 2700 |
| フェレキュラルの強さ | MPa (RT 4-point) | 415 |
| Young’ s Modulus | Gpa (4pt bend, 1300℃) | 430 |
| 熱膨張（CTE） | 10-6K-1 | 4.5 |
| 熱伝導率 | （w/mk） | 300 |
