Semicera offers a wide range of 4H-8H SiC wafers. For many years, we have been a manufacturer and supplier of products to the semiconductor and photovoltaic industries. Our main products include: Silicon carbide etch plates, silicon carbide boat trailers, silicon carbide wafer boats (PV & Semiconductor), silicon carbide furnace tubes, silicon carbide cantilever paddles, silicon carbide chucks, silicon carbide beams, as well as CVD SiC coatings and TaC coatings. Covering most European and American markets. We look forward to being your long-term partner in China.
Silicon carbide (SiC) single crystal material has a large band gap width (~Si 3 times), high thermal conductivity (~Si 3.3 times or GaAs 10 times), high electron saturation migration rate (~Si 2.5 times), high breakdown electric field (~Si 10 times or GaAs 5 times) and other outstanding characteristics.
The third generation semiconductor materials mainly include SiC, GaN, diamond, etc., because its band gap width (Eg) is greater than or equal to 2.3 electron volts (eV), also known as wide band gap semiconductor materials. Compared with the first and second generation semiconductor materials, the third generation semiconductor materials have the advantages of high thermal conductivity, high breakdown electric field, high saturated electron migration rate and high bonding energy, which can meet the new requirements of modern electronic technology for high temperature, high power, high pressure, high frequency and radiation resistance and other harsh conditions. It has important application prospects in the fields of national defense, aviation, aerospace, oil exploration, optical storage, etc., and can reduce energy loss by more than 50% in many strategic industries such as broadband communications, solar energy, automobile manufacturing, semiconductor lighting, and smart grid, and can reduce equipment volume by more than 75%, which is of milestone significance for the development of human science and technology.
Semicera energy can provide customers with high-quality Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; In addition, we can provide customers with homogeneous and heterogeneous silicon carbide epitaxial sheets; We can also customize the epitaxial sheet according to the specific needs of customers, and there is no minimum order quantity.
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アイテム |
生産 |
研究 |
ダミー |
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クリスタルパラメーター |
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ポリタイプ |
4H |
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表面向きエラー |
4±0.15° |
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電気パラメーター |
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ドーパント |
N型窒素 |
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抵抗率 |
0.015-0.025OHM・CM |
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機械的パラメーター |
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直径 |
150.0±0.2mm |
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厚さ |
350±25 µm |
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一次フラットオリエンテーション |
[1-100]±5° |
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プライマリフラット長 |
47.5±1.5mm |
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二次フラット |
なし |
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TTV |
≤5 µm |
≤10 µm |
≤15 µm |
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LTV |
≤3μm（5mm*5mm） |
≤5μm（5mm*5mm） |
≤10μm（5mm*5mm） |
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弓 |
-15μm〜15μm |
-35μm〜35μm |
-45μm〜45μm |
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ワープ |
≤35 µm |
≤45 µm |
≤55 µm |
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フロント（si-face）粗さ（AFM） |
RA≤0.2nm（5μm*5μm） |
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構造 |
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マイクロパイプ密度 |
<1 EA/CM2 |
<10 EA/CM2 |
<15 EA/CM2 |
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金属の不純物 |
≤5E10atoms/cm2 |
Na |
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BPD |
≤1500 EA/CM2 |
≤3000 EA/CM2 |
Na |
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TSD |
≤500 EA/CM2 |
≤1000 EA/CM2 |
Na |
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フロント品質 |
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フロント |
si |
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表面仕上げ |
SI-FACE CMP |
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粒子 |
≤60EA/ウェーハ（サイズ以上0.3μm） |
Na |
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傷 |
≤5EA/mm。累積長さ≤diameter |
累積長さ2*直径 |
Na |
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オレンジの皮/ピット/染色/縞/亀裂/汚染 |
なし |
Na |
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エッジチップ/インデント/骨折/ヘックスプレート |
なし |
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ポリタイプの領域 |
なし |
累積面積≤20% |
累積面積以下30% |
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フロントレーザーマーキング |
なし |
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バック品質 |
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バックフィニッシュ |
C-Face CMP |
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傷 |
≤5EA/mm、累積長さ2*直径 |
Na |
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バック欠陥（エッジチップ/インデント） |
なし |
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背中の粗さ |
RA≤0.2nm（5μm*5μm） |
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バックレーザーマーキング |
1 mm（上端から） |
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角 |
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角 |
面取り |
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パッケージング |
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パッケージング |
真空パッケージングを使用したEPIの準備 マルチワーファーカセットパッケージ |
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*注：「NA」とは、言及されていないリクエスト項目がSemi-STDを参照することはできないことを意味します。 |
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