850V High Power GaN-on-Si Epi Wafer

セミセラ introduces the 850V High Power GaN-on-Si Epi Wafer, a breakthrough in semiconductor innovation. This advanced epi wafer combines the high efficiency of Gallium Nitride (GaN) with the cost-effectiveness of Silicon (Si), creating a powerful solution for high-voltage applications.

Key Features:

     • High Voltage Handling: Engineered to support up to 850V, this GaN-on-Si Epi Wafer is ideal for demanding power electronics, enabling higher efficiency and performance.

     • Enhanced Power Density: With superior electron mobility and thermal conductivity, GaN technology allows for compact designs and increased power density.

     • Cost-Effective Solution: By leveraging silicon as the substrate, this epi wafer offers a cost-effective alternative to traditional GaN wafers, without compromising on quality or performance.

     • Wide Application Range: Perfect for use in power converters, RF amplifiers, and other high-power electronic devices, ensuring reliability and durability.

Explore the future of high-voltage technology with Semicera’s 850V High Power GaN-on-Si Epi Wafer. Designed for cutting-edge applications, this product ensures your electronic devices operate with maximum efficiency and reliability. Choose Semicera for your next-generation semiconductor needs.