炭化シリコンセラミックコーティング

As a professional Chinese manufacturer, supplier and exporter of Silicon Carbide Ceramic Coating. Semicera’s Silicon Carbide Ceramic Coating is widely used in key components of semiconductor manufacturing equipment, especially in processing processes such as CVD and PECV. Semicera is committed to providing advanced technology and product solutions for the semiconductor industry, and welcomes your further consultation.

Semicera Silicon Carbide Ceramic Coating is a high-performance protective coating made of extremely hard and wear-resistant silicon carbide (SiC) material. The coating is usually deposited on the surface of the substrate by CVD or PVD process with silicon carbide particles, providing excellent chemical corrosion resistance and high temperature stability. Therefore, Silicon Carbide Ceramic Coating is widely used in key components of semiconductor manufacturing equipment.

In semiconductor manufacturing, SiC coating can withstand extremely high temperatures of up to 1600°C, so Silicon Carbide Ceramic Coating is often used as a protective layer for equipment or tools to prevent damage in high temperature or corrosive environments.

At the same time, silicon carbide ceramic coating can resist the erosion of acids, alkalis, oxides and other chemical reagents, and has high corrosion resistance to a variety of chemical substances. Therefore, this product is suitable for various corrosive environments in the semiconductor industry.

Moreover, compared with other ceramic materials, SiC has higher thermal conductivity and can effectively conduct heat. This feature determines that in semiconductor processes that require precise temperature control, the high thermal conductivity of Silicon Carbide Ceramic Coating helps to evenly disperse heat, prevent local overheating, and ensure that the device operates at the optimal temperature.

 CVD SICコーティングの基本的な物理的特性 

財産

典型的な値

結晶構造

FCC β phase polycrystalline, mainly (111) oriented

 密度

3.21 g/cm³

硬度

2500 Vickers hardness(500g load)

穀物サイズ

2~10μm

化学純度

99.99995%

熱容量

640 J·kg-1·K-1

昇華温度

2700℃

曲げ強度

415 MPA RT 4ポイント

ヤングモジュラス

430 Gpa 4pt bend, 1300℃

Thermal Conductivity

300W·m-1·K-1

熱膨張(CTE)

4.5×10-6K-1

セミセラの職場

セミセラ職場2

機器マシン

CNN処理、化学洗浄、CVDコーティング

セミセラウェアハウス

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