Silicon carbide heater is coated with metal oxide, that is, far infrared paint silicon carbide plate as a radiation element, in the element hole (or groove) into the electric heating wire, in the bottom of the silicon carbide plate put thicker insulation, refractory, heat insulation material, and then installed on the metal shell, the terminal can be used to connect the power supply.When the far infrared ray of the silicon carbide heater radiates to the object, it can absorb, reflect and pass through. The heated and dried material absorbs far-infrared radiation energy at a certain depth of internal and surface molecules at the same time, producing a self-heating effect, so that the solvent or water molecules evaporate and heat evenly, thus avoiding deformation and qualitative change due to different degrees of thermal expansion, so that the appearance of the material, physical and mechanical properties, fastness and color remain intact.
Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming SIC protective layer.
1。高温酸化抵抗:
温度が1600 Cになると、酸化抵抗は非常に良好です。
2。高純度：高温塩素化条件下での化学蒸気堆積によって作られています。
3。侵食抵抗：高硬度、コンパクトな表面、微粒子。
4。耐食性：酸、アルカリ、塩、有機試薬。
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SIC-CVDプロパティ |
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| 結晶構造 | FCCβ相 | |
| 密度 | g/cm³ | 3.21 |
| 硬度 | ビッカーズの硬さ | 2500 |
| 穀物サイズ | mm | 2~10 |
| 化学純度 | % | 99.99995 |
| 熱容量 | J・kg-1・k-1 | 640 |
| 昇華温度 | ℃ | 2700 |
| フェレキュラルの強さ | MPA（RT 4ポイント） | 415 |
| ヤングモジュラス | GPA（4ptベンド、1300℃） | 430 |
| 熱膨張（CTE） | 10-6K-1 | 4.5 |
| 熱伝導率 | （w/mk） | 300 |
