실리콘 필름

The Silicon Film by Semicera is a high-performance material designed for a variety of advanced applications in the semiconductor and electronics industries. Made from high-quality silicon, this film offers exceptional uniformity, thermal stability, and electrical properties, making it an ideal solution for thin-film deposition, MEMS (Micro-Electro-Mechanical Systems), and semiconductor device fabrication.

The Silicon Film by Semicera is a high-quality, precision-engineered material designed to meet the stringent requirements of the semiconductor industry. Manufactured from pure silicon, this thin-film solution offers excellent uniformity, high purity, and exceptional electrical and thermal properties. It is ideal for use in various semiconductor applications, including the production of Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, and Epi-Wafer. Semicera’s Silicon Film ensures reliable and consistent performance, making it an essential material for advanced microelectronics.

Superior Quality and Performance for Semiconductor Manufacturing

Semicera’s Silicon Film is known for its outstanding mechanical strength, high thermal stability, and low defect rates, all of which are crucial in the fabrication of high-performance semiconductors. Whether used in the production of Gallium Oxide (Ga2O3) devices, AlN Wafer, or Epi-Wafers, the film provides a strong foundation for thin-film deposition and epitaxial growth. Its compatibility with other semiconductor substrates like SiC Substrate and SOI Wafers ensures seamless integration into existing manufacturing processes, helping to maintain high yields and consistent product quality.

반도체 산업의 응용

In the semiconductor industry, Semicera’s Silicon Film is utilized in a wide range of applications, from the production of Si Wafer and SOI Wafer to more specialized uses like SiN Substrate and Epi-Wafer creation. The high purity and precision of this film make it essential in the production of advanced components used in everything from microprocessors and integrated circuits to optoelectronic devices.

The Silicon Film plays a critical role in semiconductor processes such as epitaxial growth, wafer bonding, and thin-film deposition. Its reliable properties are especially valuable for industries that require highly controlled environments, such as cleanrooms in semiconductor fabs. Additionally, the Silicon Film can be integrated into cassette systems for efficient wafer handling and transport during production.

Long-Term Reliability and Consistency

One of the key benefits of using Semicera’s Silicon Film is its long-term reliability. With its excellent durability and consistent quality, this film provides a dependable solution for high-volume production environments. Whether it’s used in high-precision semiconductor devices or advanced electronic applications, Semicera’s Silicon Film ensures that manufacturers can achieve high performance and reliability across a wide range of products.

Why Choose Semicera’s Silicon Film?

The Silicon Film from Semicera is an essential material for cutting-edge applications in the semiconductor industry. Its high-performance properties, including excellent thermal stability, high purity, and mechanical strength, make it the ideal choice for manufacturers looking to achieve the highest standards in semiconductor production. From Si Wafer and SiC Substrate to the production of Gallium Oxide Ga2O3 devices, this film delivers unmatched quality and performance.

With Semicera’s Silicon Film, you can trust in a product that meets the needs of modern semiconductor manufacturing, providing a reliable foundation for the next generation of electronics.

항목

생산

연구

더미

결정 매개 변수

폴리 타입

4H

표면 방향 오류

4±0.15°

전기 매개 변수

도펀트

N- 타입 질소

저항

0.015-0.025ohm · cm

기계적 매개 변수

지름

150.0 ± 0.2mm

두께

350 ± 25 µm

1 차 평평한 방향

[1-100]±5°

1 차 평평한 길이

47.5 ± 1.5mm

보조 아파트

없음

TTV

≤5 µm

≤10 µm

≤15 µm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

절하다

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

경사

≤35 µm

≤45 µm

≤55 µm

전면 (si-face) 거칠기 (AFM)

Ra≤0.2nm (5μm*5μm)

구조

마이크로 파이프 밀도

<1 EA/CM2

<10 EA/CM2

<15 EA/CM2

금속 불순물

≤5E10atoms/cm2

NA

BPD

≤1500 EA/CM2

≤3000 EA/CM2

NA

TSD

≤500 EA/CM2

≤1000 EA/CM2

NA

프론트 품질

앞쪽

표면 마감

Si-Face CMP

입자

≤60EA/웨이퍼 (크기 0.3μm)

NA

흠집

≤5EA/mm. 누적 길이 ≤ diameter

누적 길이 ≤2*직경

NA

오렌지 껍질/구덩이/얼룩/줄무늬/균열/오염

없음

NA

에지 칩/인테이션/골절/육각 플레이트

없음

폴리 타입 영역

없음

누적 면적 ≤20%

누적 면적 ≤30%

전면 레이저 표시

없음

뒤로 품질

뒤로 마무리

C-Face CMP

흠집

≤5EA/mm, 누적 길이 ≤2*직경

NA

등 결함 (Edge Chips/Indents)

없음

뒤로 거칠기

Ra≤0.2nm (5μm*5μm)

뒤 레이저 표시

1 mm (상단 가장자리에서)

가장자리

가장자리

모따기

포장

포장

진공 포장으로 에피 레디

멀티 웨이 커 카세트 포장

*참고 :“NA”는 언급되지 않은 요청 항목이 Semi-STD를 참조 할 수 없음을 의미합니다.

tech_1_2_size

sic wafers

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