Ga2O3 Substrate

Semicera is proud to present the Ga₂O₃ Substrate, a cutting-edge material poised to revolutionize power electronics and optoelectronics. Gallium Oxide (Ga₂O₃) substrates are known for their ultra-wide bandgap, making them ideal for high-power and high-frequency devices.

주요 기능:

     • Ultra-Wide Bandgap: Ga₂O3 offers a bandgap of approximately 4.8 eV, significantly enhancing its ability to handle high voltages and temperatures compared to traditional materials like Silicon and GaN.

     • High Breakdown Voltage: With an exceptional breakdown field, the Ga₂O₃ Substrate is perfect for devices requiring high-voltage operation, ensuring greater efficiency and reliability.

     • Thermal Stability: The material’s superior thermal stability makes it suitable for applications in extreme environments, maintaining performance even under harsh conditions.

     • Versatile Applications: Ideal for use in high-efficiency power transistors, UV optoelectronic devices, and more, providing a robust foundation for advanced electronic systems.

Experience the future of semiconductor technology with Semicera’s Ga₂O₃ Substrate. Designed to meet the growing demands of high-power and high-frequency electronics, this substrate sets a new standard for performance and durability. Trust Semicera to deliver innovative solutions for your most challenging applications.