Product introduction and use: Placed 41 pieces of 4 hours substrate, used for growing LED with blue-green epitaxial filmDevice location of the product: in the reaction chamber, in direct contact with the waferMain downstream products: LED chipsMain end market: LED
Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming a SiC protective layer.
1. 고온 산화 저항:
the oxidation resistance is still very good when the temperature is as high as 1600 ℃.
2. 고순도 : 고온 염소화 조건 하에서 화학 증기 증착에 의해 만들어진.
3. 침식 저항 : 높은 경도, 소형 표면, 미세 입자.
4. 부식성 : 산, 알칼리, 소금 및 유기 시약.
| SIC-CVD 특성 | ||
| 결정 구조 | FCC β phase | |
| 밀도 | g/cm ³ | 3.21 |
| 경도 | 비커스 경도 | 2500 |
| 곡물 크기 | μm | 2~10 |
| 화학적 순도 | % | 99.99995 |
| 열용량 | J·kg-1 ·K-1 | 640 |
| 승화 온도 | ℃ | 2700 |
| Felexural 강도 | MPa (RT 4-point) | 415 |
| Young’ s Modulus | Gpa (4pt bend, 1300℃) | 430 |
| 열 팽창 (CTE) | 10-6K-1 | 4.5 |
| 열전도율 | (w/mk) | 300 |
