Product introduction and use: Place 19 pieces of 2 time substrate for the growth of deep ultraviolet LED epitaxial filmDevice location of the product: in the reaction chamber, in direct contact with the waferMain downstream products :LED chipsMain end market: LED
우리 회사는 제공합니다 SIC 코팅 process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming SIC 보호 층.
1. High temperature oxidation resistance:
the oxidation resistance is still very good when the temperature is as high as 1600 C.
2. High purity: made by chemical vapor deposition under high temperature chlorination condition.
3. Erosion resistance: high hardness, compact surface, fine particles.
4. Corrosion resistance: acid, alkali, salt and organic reagents.
| SIC-CVD 특성 | ||
| 결정 구조 | FCC β 상 | |
| 밀도 | g/cm ³ | 3.21 |
| 경도 | 비커스 경도 | 2500 |
| 곡물 크기 | mm | 2~10 |
| 화학적 순도 | % | 99.99995 |
| 열용량 | J · KG-1 · K-1 | 640 |
| 승화 온도 | ℃ | 2700 |
| Felexural 강도 | MPA (RT 4 점) | 415 |
| 영률 | GPA (4pt Bend, 1300 ℃) | 430 |
| 열 팽창 (CTE) | 10-6K-1 | 4.5 |
| 열전도율 | (w/mk) | 300 |
