Semicera Energy Technology Co., Ltd. is a leading supplier specializing in wafer and advanced semiconductor consumables.We are dedicated to providing high-quality, reliable, and innovative products to semiconductor manufacturing,photovoltaic industryand other related fields.Our product line includes SiC/TaC coated graphite products and ceramic products, encompassing various materials such as silicon carbide, silicon nitride, and aluminum oxide and etc.As a trusted supplier, we understand the importance of consumables in the manufacturing process, and we are committed to delivering products that meet the highest quality standards to fulfill our customers’ needs.
Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming a SiC protective layer.
1. 고온 산화 저항:
온도가 1600 C에 이르면 산화 저항은 여전히 매우 좋습니다.
2. 고순도 : 고온 염소화 조건 하에서 화학 증기 증착에 의해 만들어진.
3. 침식 저항 : 높은 경도, 소형 표면, 미세 입자.
4. 부식성 : 산, 알칼리, 소금 및 유기 시약.
| SIC-CVD 특성 | ||
| 결정 구조 | FCC β phase | |
| 밀도 | g/cm ³ | 3.21 |
| 경도 | 비커스 경도 | 2500 |
| 곡물 크기 | μm | 2~10 |
| 화학적 순도 | % | 99.99995 |
| 열용량 | J·kg-1 ·K-1 | 640 |
| 승화 온도 | ℃ | 2700 |
| Felexural 강도 | MPa (RT 4-point) | 415 |
| Young’ s Modulus | Gpa (4pt bend, 1300℃) | 430 |
| 열 팽창 (CTE) | 10-6K-1 | 4.5 |
| 열전도율 | (w/mk) | 300 |
