4″ 6″ High Purity Semi-Insulating SiC Ingot

Semicera’s 4”6” High Purity Semi-Insulating SiC Ingots are meticulously crafted for advanced electronic and optoelectronic applications. Featuring superior thermal conductivity and electrical resistivity, these ingots provide a robust foundation for high-performance devices. Semicera ensures consistent quality and reliability in every product.

Semicera’s 4”6” High Purity Semi-Insulating SiC Ingots are designed to meet the exacting standards of the semiconductor industry. These ingots are produced with a focus on purity and consistency, making them an ideal choice for high-power and high-frequency applications where performance is paramount.

The unique properties of these SiC ingots, including high thermal conductivity and excellent electrical resistivity, make them particularly suited for use in power electronics and microwave devices. Their semi-insulating nature allows for effective heat dissipation and minimal electrical interference, leading to more efficient and reliable components.

Semicera employs state-of-the-art manufacturing processes to produce ingots with exceptional crystal quality and uniformity. This precision ensures that each ingot can be reliably used in sensitive applications, such as high-frequency amplifiers, laser diodes, and other optoelectronic devices.

Available in both 4-inch and 6-inch sizes, Semicera’s SiC ingots provide the flexibility needed for various production scales and technological requirements. Whether for research and development or mass production, these ingots deliver the performance and durability that modern electronic systems demand.

By choosing Semicera’s High Purity Semi-Insulating SiC Ingots, you are investing in a product that combines advanced material science with unparalleled manufacturing expertise. Semicera is dedicated to supporting the innovation and growth of the semiconductor industry, offering materials that enable the development of cutting-edge electronic devices.

항목

생산

연구

더미

결정 매개 변수

폴리 타입

4H

표면 방향 오류

4±0.15°

전기 매개 변수

도펀트

N- 타입 질소

저항

0.015-0.025ohm · cm

기계적 매개 변수

지름

150.0 ± 0.2mm

두께

350 ± 25 µm

1 차 평평한 방향

[1-100]±5°

1 차 평평한 길이

47.5 ± 1.5mm

보조 아파트

없음

TTV

≤5 µm

≤10 µm

≤15 µm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

절하다

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

경사

≤35 µm

≤45 µm

≤55 µm

전면 (si-face) 거칠기 (AFM)

Ra≤0.2nm (5μm*5μm)

구조

마이크로 파이프 밀도

<1 EA/CM2

<10 EA/CM2

<15 EA/CM2

금속 불순물

≤5E10atoms/cm2

NA

BPD

≤1500 EA/CM2

≤3000 EA/CM2

NA

TSD

≤500 EA/CM2

≤1000 EA/CM2

NA

프론트 품질

앞쪽

표면 마감

Si-Face CMP

입자

≤60EA/웨이퍼 (크기 0.3μm)

NA

흠집

≤5EA/mm. 누적 길이 ≤ diameter

누적 길이 ≤2*직경

NA

오렌지 껍질/구덩이/얼룩/줄무늬/균열/오염

없음

NA

에지 칩/인테이션/골절/육각 플레이트

없음

폴리 타입 영역

없음

누적 면적 ≤20%

누적 면적 ≤30%

전면 레이저 표시

없음

뒤로 품질

뒤로 마무리

C-Face CMP

흠집

≤5EA/mm, 누적 길이 ≤2*직경

NA

등 결함 (Edge Chips/Indents)

없음

뒤로 거칠기

Ra≤0.2nm (5μm*5μm)

뒤 레이저 표시

1 mm (상단 가장자리에서)

가장자리

가장자리

모따기

포장

포장

진공 포장으로 에피 레디

멀티 웨이 커 카세트 포장

*참고 :“NA”는 언급되지 않은 요청 항목이 Semi-STD를 참조 할 수 없음을 의미합니다.

tech_1_2_size

sic wafers

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