6 Inch N-type SiC Wafer

Semicera’s 6 Inch N-type SiC Wafer offers outstanding thermal conductivity and high electric field strength, making it a superior choice for power and RF devices. This wafer, tailored to meet industry demands, exemplifies Semicera’s commitment to quality and innovation in semiconductor materials.

Semicera’s 6 Inch N-type SiC Wafer stands at the forefront of semiconductor technology. Crafted for optimal performance, this wafer excels in high-power, high-frequency, and high-temperature applications, essential for advanced electronic devices.

Our 6 Inch N-type SiC wafer features high electron mobility and low on-resistance, which are critical parameters for power devices such as MOSFETs, diodes, and other components. These properties ensure efficient energy conversion and reduced heat generation, enhancing the performance and lifespan of electronic systems.

Semicera’s rigorous quality control processes ensure that each SiC wafer maintains excellent surface flatness and minimal defects. This meticulous attention to detail ensures that our wafers meet the stringent requirements of industries such as automotive, aerospace, and telecommunications.

In addition to its superior electrical properties, the N-type SiC wafer offers robust thermal stability and resistance to high temperatures, making it ideal for environments where conventional materials might fail. This capability is particularly valuable in applications involving high-frequency and high-power operations.

By choosing Semicera’s 6 Inch N-type SiC Wafer, you are investing in a product that represents the pinnacle of semiconductor innovation. We are committed to providing the building blocks for cutting-edge devices, ensuring that our partners in various industries have access to the best materials for their technological advancements.

항목

생산

연구

더미

결정 매개 변수

폴리 타입

4H

표면 방향 오류

4±0.15°

전기 매개 변수

도펀트

N- 타입 질소

저항

0.015-0.025ohm · cm

기계적 매개 변수

지름

150.0 ± 0.2mm

두께

350 ± 25 µm

1 차 평평한 방향

[1-100]±5°

1 차 평평한 길이

47.5 ± 1.5mm

보조 아파트

없음

TTV

≤5 µm

≤10 µm

≤15 µm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

절하다

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

경사

≤35 µm

≤45 µm

≤55 µm

전면 (si-face) 거칠기 (AFM)

Ra≤0.2nm (5μm*5μm)

구조

마이크로 파이프 밀도

<1 EA/CM2

<10 EA/CM2

<15 EA/CM2

금속 불순물

≤5E10atoms/cm2

NA

BPD

≤1500 EA/CM2

≤3000 EA/CM2

NA

TSD

≤500 EA/CM2

≤1000 EA/CM2

NA

프론트 품질

앞쪽

표면 마감

Si-Face CMP

입자

≤60EA/웨이퍼 (크기 0.3μm)

NA

흠집

≤5EA/mm. 누적 길이 ≤ diameter

누적 길이 ≤2*직경

NA

오렌지 껍질/구덩이/얼룩/줄무늬/균열/오염

없음

NA

에지 칩/인테이션/골절/육각 플레이트

없음

폴리 타입 영역

없음

누적 면적 ≤20%

누적 면적 ≤30%

전면 레이저 표시

없음

뒤로 품질

뒤로 마무리

C-Face CMP

흠집

≤5EA/mm, 누적 길이 ≤2*직경

NA

등 결함 (Edge Chips/Indents)

없음

뒤로 거칠기

Ra≤0.2nm (5μm*5μm)

뒤 레이저 표시

1 mm (상단 가장자리에서)

가장자리

가장자리

모따기

포장

포장

진공 포장으로 에피 레디

멀티 웨이 커 카세트 포장

*참고 :“NA”는 언급되지 않은 요청 항목이 Semi-STD를 참조 할 수 없음을 의미합니다.

tech_1_2_size

sic wafers

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