6 Inch Semi-Insulating HPSI SiC Wafer

Semicera’s 6 Inch Semi-Insulating HPSI SiC Wafers are engineered for maximum efficiency and reliability in high-performance electronics. These wafers feature excellent thermal and electrical properties, making them ideal for a variety of applications, including power devices and high-frequency electronics. Choose Semicera for superior quality and innovation.

Semicera’s 6 Inch Semi-Insulating HPSI SiC Wafers are designed to meet the rigorous demands of modern semiconductor technology. With exceptional purity and consistency, these wafers serve as a reliable foundation for developing high-efficiency electronic components.

These HPSI SiC wafers are known for their outstanding thermal conductivity and electrical insulation, which are critical for optimizing the performance of power devices and high-frequency circuits. The semi-insulating properties help in minimizing electrical interference and maximizing device efficiency.

The high-quality manufacturing process employed by Semicera ensures that each wafer has uniform thickness and minimal surface defects. This precision is essential for advanced applications such as radio frequency devices, power inverters, and LED systems, where performance and durability are key factors.

By leveraging state-of-the-art production techniques, Semicera provides wafers that not only meet but exceed industry standards. The 6-inch size offers flexibility in scaling up production, catering to both research and commercial applications in the semiconductor sector.

Choosing Semicera’s 6 Inch Semi-Insulating HPSI SiC Wafers means investing in a product that delivers consistent quality and performance. These wafers are part of Semicera’s commitment to advancing the capabilities of semiconductor technology through innovative materials and meticulous craftsmanship.

항목

생산

연구

더미

결정 매개 변수

폴리 타입

4H

표면 방향 오류

4±0.15°

전기 매개 변수

도펀트

N- 타입 질소

저항

0.015-0.025ohm · cm

기계적 매개 변수

지름

150.0 ± 0.2mm

두께

350 ± 25 µm

1 차 평평한 방향

[1-100]±5°

1 차 평평한 길이

47.5 ± 1.5mm

보조 아파트

없음

TTV

≤5 µm

≤10 µm

≤15 µm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

절하다

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

경사

≤35 µm

≤45 µm

≤55 µm

전면 (si-face) 거칠기 (AFM)

Ra≤0.2nm (5μm*5μm)

구조

마이크로 파이프 밀도

<1 EA/CM2

<10 EA/CM2

<15 EA/CM2

금속 불순물

≤5E10atoms/cm2

NA

BPD

≤1500 EA/CM2

≤3000 EA/CM2

NA

TSD

≤500 EA/CM2

≤1000 EA/CM2

NA

프론트 품질

앞쪽

표면 마감

Si-Face CMP

입자

≤60EA/웨이퍼 (크기 0.3μm)

NA

흠집

≤5EA/mm. 누적 길이 ≤ diameter

누적 길이 ≤2*직경

NA

오렌지 껍질/구덩이/얼룩/줄무늬/균열/오염

없음

NA

에지 칩/인테이션/골절/육각 플레이트

없음

폴리 타입 영역

없음

누적 면적 ≤20%

누적 면적 ≤30%

전면 레이저 표시

없음

뒤로 품질

뒤로 마무리

C-Face CMP

흠집

≤5EA/mm, 누적 길이 ≤2*직경

NA

등 결함 (Edge Chips/Indents)

없음

뒤로 거칠기

Ra≤0.2nm (5μm*5μm)

뒤 레이저 표시

1 mm (상단 가장자리에서)

가장자리

가장자리

모따기

포장

포장

진공 포장으로 에피 레디

멀티 웨이 커 카세트 포장

*참고 :“NA”는 언급되지 않은 요청 항목이 Semi-STD를 참조 할 수 없음을 의미합니다.

tech_1_2_size

sic wafers

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