Semicera’s 8 Inch N-type SiC Wafers are engineered for cutting-edge applications in high-power and high-frequency electronics. These wafers provide superior electrical and thermal properties, ensuring efficient performance in demanding environments. Semicera delivers innovation and reliability in semiconductor materials.
Semicera’s 8 Inch N-type SiC Wafers are at the forefront of semiconductor innovation, providing a solid base for the development of high-performance electronic devices. These wafers are designed to meet the rigorous demands of modern electronic applications, from power electronics to high-frequency circuits.
The N-type doping in these SiC wafers enhances their electrical conductivity, making them ideal for a wide range of applications, including power diodes, transistors, and amplifiers. The superior conductivity ensures minimal energy loss and efficient operation, which are critical for devices operating at high frequencies and power levels.
Semicera employs advanced manufacturing techniques to produce SiC wafers with exceptional surface uniformity and minimal defects. This level of precision is essential for applications that require consistent performance and durability, such as in aerospace, automotive, and telecommunications industries.
Incorporating Semicera’s 8 Inch N-type SiC Wafers into your production line provides a foundation for creating components that can withstand harsh environments and high temperatures. These wafers are perfect for applications in power conversion, RF technology, and other demanding fields.
Choosing Semicera’s 8 Inch N-type SiC Wafers means investing in a product that combines high-quality material science with precise engineering. Semicera is committed to advancing the capabilities of semiconductor technologies, offering solutions that enhance the efficiency and reliability of your electronic devices.
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항목 |
생산 |
연구 |
더미 |
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결정 매개 변수 |
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폴리 타입 |
4H |
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표면 방향 오류 |
4±0.15° |
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전기 매개 변수 |
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도펀트 |
N- 타입 질소 |
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저항 |
0.015-0.025ohm · cm |
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기계적 매개 변수 |
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지름 |
150.0 ± 0.2mm |
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두께 |
350 ± 25 µm |
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1 차 평평한 방향 |
[1-100]±5° |
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1 차 평평한 길이 |
47.5 ± 1.5mm |
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보조 아파트 |
없음 |
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TTV |
≤5 µm |
≤10 µm |
≤15 µm |
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LTV |
≤3 μm (5mm*5mm) |
≤5 μm (5mm*5mm) |
≤10 μm (5mm*5mm) |
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절하다 |
-15μm ~ 15μm |
-35μm ~ 35μm |
-45μm ~ 45μm |
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경사 |
≤35 µm |
≤45 µm |
≤55 µm |
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전면 (si-face) 거칠기 (AFM) |
Ra≤0.2nm (5μm*5μm) |
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구조 |
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마이크로 파이프 밀도 |
<1 EA/CM2 |
<10 EA/CM2 |
<15 EA/CM2 |
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금속 불순물 |
≤5E10atoms/cm2 |
NA |
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BPD |
≤1500 EA/CM2 |
≤3000 EA/CM2 |
NA |
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TSD |
≤500 EA/CM2 |
≤1000 EA/CM2 |
NA |
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프론트 품질 |
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앞쪽 |
시 |
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표면 마감 |
Si-Face CMP |
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입자 |
≤60EA/웨이퍼 (크기 0.3μm) |
NA |
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흠집 |
≤5EA/mm. 누적 길이 ≤ diameter |
누적 길이 ≤2*직경 |
NA |
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오렌지 껍질/구덩이/얼룩/줄무늬/균열/오염 |
없음 |
NA |
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에지 칩/인테이션/골절/육각 플레이트 |
없음 |
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폴리 타입 영역 |
없음 |
누적 면적 ≤20% |
누적 면적 ≤30% |
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전면 레이저 표시 |
없음 |
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뒤로 품질 |
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뒤로 마무리 |
C-Face CMP |
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흠집 |
≤5EA/mm, 누적 길이 ≤2*직경 |
NA |
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등 결함 (Edge Chips/Indents) |
없음 |
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뒤로 거칠기 |
Ra≤0.2nm (5μm*5μm) |
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뒤 레이저 표시 |
1 mm (상단 가장자리에서) |
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가장자리 |
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가장자리 |
모따기 |
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포장 |
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포장 |
진공 포장으로 에피 레디 멀티 웨이 커 카세트 포장 |
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*참고 :“NA”는 언급되지 않은 요청 항목이 Semi-STD를 참조 할 수 없음을 의미합니다. |
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