8-Inch SiC-Coated Graphite Wafer Carrier Susceptor

Name: Wholesale Graphite Susceptor with Silicon Carbide Coating 8 inch wafer Carrier Factory
SKU: 1028

Semicera’s 8-inch graphite susceptor with SiC coating is manufactured using a CVD process for semiconductor high-temperature applications. The product features stable thermal conductivity, strong resistance to oxidation, and excellent chemical corrosion resistance. The dense and uniform SiC layer effectively protects the graphite base from process gas erosion, significantly extending service life under harsh operating conditions.

It is widely used in MOCVD, CVD, and other high-temperature epitaxy and deposition systems, ensuring stable wafer support and uniform heat distribution. Designed for mass production environments in semiconductor and LED manufacturing, it delivers consistent performance and high process reliability.

8-Inch SiC-Coated Graphite Wafer Carrier Susceptor

설명

CVD-SiC coating features a uniform microstructure, dense morphology, and excellent high-temperature stability. It offers outstanding resistance to oxidation, high purity, and strong resistance to acids, alkalis, and organic solvents, ensuring stable physical and chemical performance under harsh process conditions.

In comparison, high-purity graphite begins to oxidize at around 400 °C, leading to material loss through powdering. This not only causes contamination of surrounding equipment and vacuum chambers but also increases impurity levels in high-purity processing environments.

In contrast, SiC coatings remain chemically and physically stable up to approximately 1600 °C, significantly improving durability and process cleanliness. As a result, CVD-SiC-coated components are widely adopted in modern high-temperature industrial applications, particularly in semiconductor manufacturing.

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