Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming SiC protective layer.
Blue/green LED epitaxy from semicera offers cutting-edge solutions for high-performance LED manufacturing. Designed to support advanced epitaxial growth processes, semicera’s Blue/green LED epitaxy technology enhances efficiency and precision in producing blue and green LEDs, critical for various optoelectronic applications. Utilizing state-of-the-art Si Epitaxy and SiC Epitaxy, this solution ensures excellent quality and durability.
In the manufacturing process, MOCVD Susceptor plays a crucial role, along with components like PSS Etching Carrier, ICP Etching Carrier, and RTP Carrier, which optimize the epitaxial growth environment. Semicera’s Blue/green LED epitaxy is designed to provide stable support for LED Epitaxial Susceptor, Barrel Susceptor, and Monocrystalline Silicon, ensuring the production of consistent, high-quality results.
This epitaxy process is vital for creating Photovoltaic Parts and supports applications such as GaN on SiC Epitaxy, improving overall semiconductor efficiency. Whether in a Pancake Susceptor configuration or used in other advanced setups, semicera’s Blue/green LED epitaxy solutions offer reliable performance, helping manufacturers meet the growing demand for high-quality LED components.
주요 기능:
1. High temperature oxidation resistance:
the oxidation resistance is still very good when the temperature is as high as 1600 C.
2. High purity : made by chemical vapor deposition under high temperature chlorination condition.
3. Erosion resistance: high hardness, compact surface, fine particles.
4. Corrosion resistance: acid, alkali, salt and organic reagents.
주요 사양 CVD Sic 코팅
|
SIC-CVD 특성 |
||
| 결정 구조 | FCC β 상 | |
| 밀도 | g/cm ³ | 3.21 |
| 경도 | 비커스 경도 | 2500 |
| 곡물 크기 | mm | 2~10 |
| 화학적 순도 | % | 99.99995 |
| 열용량 | J · KG-1 · K-1 | 640 |
| 승화 온도 | ℃ | 2700 |
| Felexural 강도 | MPA (RT 4 점) | 415 |
| Young’ s Modulus | GPA (4pt Bend, 1300 ℃) | 430 |
| 열 팽창 (CTE) | 10-6K-1 | 4.5 |
| 열전도율 | (w/mk) | 300 |
