Semiconductor recrystallized silicon carbide boat

Semicera Energy Technology Co., Ltd.는 웨이퍼 및 고급 반도체 소모품을 전문으로하는 선도적 인 공급 업체이며, 우리는 고품질의 신뢰할 수 있고 신뢰할 수 있고 혁신적인 제품을 반도체 제조, 광전지 산업 및 기타 관련 분야에 제공하기 위해 최선을 다하고 있습니다. 산화 알루미늄 등. 신뢰할 수있는 공급 업체로서, 우리는 제조 공정에서 소모품의 중요성을 이해하며, 고객의 요구를 충족시키기 위해 최고 품질 표준을 충족하는 제품을 제공하기 위해 노력하고 있습니다.

Silicon carbide is a new type of ceramics with high cost performance and excellent material properties. Due to features like high strength and hardness, high temperature resistance, great thermal conductivity and chemical corrosion resistance, Silicon Carbide can almost withstand all chemical medium. Therefore, SiC are widely used in oil mining, chemical, machinery and airspace, even nuclear energy and the military have their special demands on SIC. Some normal application we can offer are seal rings for pump, valve and protective armor etc.

We are able to design and manufacture according to your specific dimensions with good quality and reasonable deliver time. 

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Advantages:

High temperature oxidation resistance

Excellent Corrosion resistance

Good Abrasion resistance

High coefficient of heat conductivity
Self-lubricity, low density
High hardness
Customized design.

silicon carbide boat (8)

Applications:

-Wear-resistant Field: bushing, plate, sandblasting nozzle,cyclone lining, grinding barrel,etc…

-High Temperature Field: siC Slab, Quenching Furnace Tube,Radiant Tube,crucible,Heating Element, Roller, Beam, Heat Exchanger, Cold Air Pipe, Burner Nozzle, Thermocouple Protection Tube, SiC boat,Kiln car Structure,Setter,etc.

-Military Bulletproof Field

-Silicon Carbide Semiconductor: SiC wafer boat, sic chuck,sic paddle, sic cassette, sic diffusion tube, wafer fork, suction plate, guideway,etc.

-Silicon Carbide Seal Field: all kinds of sealing ring, bearing, bushing, etc.

-Photovoltaic Field: Cantilever Paddle, Grinding Barrel, Silicon Carbide Roller,etc.

-Lithium Battery Field

Technical Parameters:

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Material Datasheet

材料Material

R-SiC

使用温度Working temperature (°C)

1600°C ( 氧化气氛Oxidizing environment)

1700°C ( 还原气氛Reducing environment)

sic含量SiC content (%)

> 99

自由Si 含量Free Si content (%)

< 0.1

体积密度Bulk density (g/cm3)

2.60-2.70

气孔率Apparent porosity (%)

< 16

抗压强度Crushing strength (MPa)

> 600

常温抗弯强度Cold bending strength (MPa)

80-90 (20°C)

高温抗弯强度Hot bending strength (MPa)

90-100 (1400°C)

热膨胀系数

Thermal expansion coefficient @1500°C (10-6/°C)

4.70

导热系数Thermal conductivity @1200°C (W/mK)

23

杨氏模量Elastic modulus (GPa)

240

抗热震性Thermal shock resistance

很好Extremely good

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