Semicera offers a comprehensive range of susceptors and graphite components designed for various epitaxy reactors.Through strategic partnerships with industry-leading OEMs, extensive materials expertise, and advanced manufacturing capabilities, Semicera delivers tailored designs to meet the specific requirements of your application. Our commitment to excellence ensures that you receive optimal solutions for your epitaxy reactor needs.
Our company provides SiC coating process services on the surface of graphite, ceramics and other materials by CVD method, so that special gases containing carbon and silicon can react at high temperature to obtain high-purity Sic molecules, which can be deposited on the surface of coated materials to form a SiC protective layer for epitaxy barrel type hy pnotic.
1. 고온 산화 저항:
온도가 1600 C에 이르면 산화 저항은 여전히 매우 좋습니다.
2. High purity : made by chemical vapor deposition under high temperature chlorination condition.
3. 침식 저항 : 높은 경도, 소형 표면, 미세 입자.
4. 부식성 : 산, 알칼리, 소금 및 유기 시약.
| SIC-CVD 특성 | ||
| 결정 구조 | FCC β phase | |
| 밀도 | g/cm ³ | 3.21 |
| 경도 | 비커스 경도 | 2500 |
| 곡물 크기 | μm | 2~10 |
| 화학적 순도 | % | 99.99995 |
| 열용량 | J·kg-1 ·K-1 | 640 |
| 승화 온도 | ℃ | 2700 |
| Felexural 강도 | MPa (RT 4-point) | 415 |
| Young’ s Modulus | Gpa (4pt bend, 1300℃) | 430 |
| 열 팽창 (CTE) | 10-6K-1 | 4.5 |
| 열전도율 | (w/mk) | 300 |
