Semicera Energy Technology Co., Ltd. is a leading supplier specializing in wafer and advanced semiconductor consumables. We are dedicated to providing high-quality, reliable, and innovative products to semiconductor manufacturing, photovoltaic industry and other related fields.Our product line includes SiC/TaC coated graphite products and ceramic products, encompassing various materials such as silicon carbide, silicon nitride, and aluminum oxide and etc.At present,we are the only manufacturer to provide purity 99.9999% SiC coating and 99.9% recrystallized silicon carbide. The max SiC coating length we can do 2640mm.
실리콘 카바이드 (SIC) 단결정 재료는 큰 밴드 갭 너비 (~ SI 3 회), 높은 열전도율 (~ SI 3.3 배 또는 GAAS 10 배), 높은 전자 포화 이동 속도 (~ SI 2.5 배), 높은 고장 전기장 (~ SI 10 회 또는 GAAS 5 회)을 갖습니다.
SiC devices have irreplaceable advantages in the field of high temperature, high pressure, high frequency, high power electronic devices and extreme environmental applications such as aerospace, military, nuclear energy, etc., make up for the defects of traditional semiconductor material devices in practical applications, and are gradually becoming the mainstream of power semiconductors.
4H-SiC Silicon carbide substrate specifications
|
Item项目 |
Specifications参数 |
|
|
폴리 타입 |
4H -SiC |
6H- SiC |
|
지름 |
2 inch | 3 inch | 4 inch | 6inch |
2 inch | 3 inch | 4 inch | 6inch |
|
두께 |
330 μm ~ 350 μm |
330 μm ~ 350 μm |
|
Conductivity |
N – type / Semi-insulating |
N – type / Semi-insulating |
|
도펀트 |
N2 ( Nitrogen )V ( Vanadium ) |
N2 ( Nitrogen ) V ( Vanadium ) |
|
Orientation |
On axis <0001> |
On axis <0001> |
|
저항 |
0.015 ~ 0.03 ohm-cm |
0.02 ~ 0.1 ohm-cm |
|
Micropipe Density(MPD) |
≤10/cm2 ~ ≤1/cm2 |
≤10/cm2 ~ ≤1/cm2 |
|
TTV |
≤ 15 μm |
≤ 15 μm |
|
Bow / Warp |
≤25 μm |
≤25 μm |
|
Surface |
DSP/SSP |
DSP/SSP |
|
Grade |
Production / Research grade |
Production / Research grade |
|
Crystal Stacking Sequence |
ABCB |
ABCABC |
|
Lattice parameter |
a=3.076A , c=10.053A |
a=3.073A , c=15.117A |
|
Eg/eV(Band-gap) |
3.27 eV |
3.02 eV |
|
ε(Dielectric Constant) |
9.6 |
9.66 |
|
Refraction Index |
n0 =2.719 ne =2.777 |
n0 =2.707 , ne =2.755 |
6H-SiC Silicon Carbide substrate specifications
|
Item项目 |
Specifications参数 |
|
폴리 타입 |
6H-SiC |
|
지름 |
4 inch | 6inch |
|
두께 |
350μm ~ 450μm |
|
Conductivity |
N – type / Semi-insulating |
|
도펀트 |
N2( Nitrogen ) |
|
Orientation |
<0001> off 4°± 0.5° |
|
저항 |
0.02 ~ 0.1 ohm-cm |
|
Micropipe Density(MPD) |
≤ 10/cm2 |
|
TTV |
≤ 15 μm |
|
Bow / Warp |
≤25 μm |
|
Surface |
Si Face: CMP, Epi-Ready |
|
Grade |
Research grade |
