{"id":2215,"date":"2025-09-11T05:33:27","date_gmt":"2025-09-11T05:33:27","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/gallium-nitride-substratesgan-wafers\/"},"modified":"2026-04-29T15:28:08","modified_gmt":"2026-04-29T07:28:08","slug":"gallium-nitride-substratesgan-wafers","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/ko\/product\/gallium-nitride-substratesgan-wafers\/","title":{"rendered":"Gallium Nitride Substrates|GaN Wafers"},"content":{"rendered":"

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\"GaN <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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3 \uc138\ub300 \ubc18\ub3c4\uccb4 \uc7ac\ub8cc\ub294 \uc8fc\ub85c SIC, GAN, \ub2e4\uc774\uc544\ubaac\ub4dc \ub4f1\uc744 \ud3ec\ud568\ud569\ub2c8\ub2e4. \ubc34\ub4dc \uac2d \ub108\ube44 (\uc608 : \ubc34\ub4dc)\ub294 2.3 \uc804\uc790 \ubcfc\ud2b8 (EV)\ubcf4\ub2e4 \ud06c\uae30 \ub54c\ubb38\uc5d0 \uad11\uc5ed \uac2d \ubc18\ub3c4\uccb4 \uc7ac\ub8cc\ub85c\ub3c4 \uc54c\ub824\uc838 \uc788\uae30 \ub54c\ubb38\uc785\ub2c8\ub2e4. 1 \uc138\ub300 \ubc0f 2 \uc138\ub300 \ubc18\ub3c4\uccb4 \uc7ac\ub8cc\uc640 \ube44\uad50\ud558\uc5ec, 3 \uc138\ub300 \ubc18\ub3c4\uccb4 \uc7ac\ub8cc\ub294 \ub192\uc740 \uc5f4\uc804\ub3c4\uc728, \ub192\uc740 \ud30c\uad34 \uc804\uae30\uc7a5, \ub192\uc740 \ud3ec\ud654 \uc804\uc790 \uc774\ub3d9 \uc18d\ub3c4 \ubc0f \uace0\ud608\uc555 \uc5d0\ub108\uc9c0\uc758 \uc774\uc810\uc744 \uac00\uc9c0\uace0 \uc788\uc73c\uba70, \uc774\ub294 \uace0\uc628, \uace0\uc555, \uace0\uc555, \ubc29\uc0ac\uc120 \uc800\ud56d \ubc0f \uae30\ud0c0 \uac00\ud639\ud55c \uc870\uac74\uc5d0 \ub300\ud55c \ud604\ub300 \uc804\uc790 \uae30\uc220\uc758 \uc0c8\ub85c\uc6b4 \uc694\uad6c \uc0ac\ud56d\uc744 \ucda9\uc871\uc2dc\ud0ac \uc218 \uc788\uc2b5\ub2c8\ub2e4. \uad6d\ubc29, \ud56d\uacf5, \ud56d\uacf5 \uc6b0\uc8fc, \uc11d\uc720 \ud0d0\uc0ac, \uad11 \uc2a4\ud1a0\ub9ac\uc9c0 \ub4f1 \ubd84\uc57c\uc5d0\uc11c \uc911\uc694\ud55c \uc751\uc6a9 \uc804\ub9dd\uc744 \ubcf4\uc720\ud558\uace0 \uc788\uc73c\uba70 \uad11\ub300\uc5ed \ud1b5\uc2e0, \ud0dc\uc591 \uc5d0\ub108\uc9c0, \uc790\ub3d9\ucc28 \uc81c\uc870, \ubc18\ub3c4\uccb4 \uc870\uba85 \ubc0f \uc2a4\ub9c8\ud2b8 \uace1\ubb3c\uacfc \uac19\uc740 \ub9ce\uc740 \uc804\ub7b5\uc801 \uc0b0\uc5c5\uc5d0\uc11c 50% \uc774\uc0c1\uc73c\ub85c \uc5d0\ub108\uc9c0 \uc190\uc2e4\uc744 \uc904\uc77c \uc218 \uc788\uc73c\uba70, 75%\ubcf4\ub2e4 \uc7a5\ube44\ub97c \uac10\uc18c\uc2dc\ud0ac \uc218 \uc788\uc2b5\ub2c8\ub2e4.<\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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Item 项目<\/p>\n<\/td>\n

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GaN-FS-C-U-C50<\/p>\n<\/td>\n

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GaN-FS-C-N-C50<\/p>\n<\/td>\n

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GaN-FS-C-SI-C50<\/p>\n<\/td>\n<\/tr>\n

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\uc9c0\ub984
晶圆直径<\/span><\/p>\n<\/td>\n

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50.8 ± 1 mm<\/p>\n<\/td>\n<\/tr>\n

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\ub450\uaed8厚度<\/span><\/p>\n<\/td>\n

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350 ± 25 μm<\/p>\n<\/td>\n<\/tr>\n

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Orientation
晶向<\/span><\/p>\n<\/td>\n

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C plane (0001) off angle toward M-axis 0.35 ± 0.15°<\/p>\n<\/td>\n<\/tr>\n

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Prime Flat
主定位边<\/span><\/p>\n<\/td>\n

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(1-100) 0 ± 0.5°, 16 ± 1 mm<\/p>\n<\/td>\n<\/tr>\n

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\ubcf4\uc870 \uc544\ud30c\ud2b8
次定位边<\/span><\/p>\n<\/td>\n

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(11-20) 0 ± 3°, 8 ± 1 mm<\/p>\n<\/td>\n<\/tr>\n

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Conductivity
导电性<\/span><\/p>\n<\/td>\n

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N-type<\/p>\n<\/td>\n

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N-type<\/p>\n<\/td>\n

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Semi-Insulating<\/p>\n<\/td>\n<\/tr>\n

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Resistivity (300K)
电阻率<\/span><\/p>\n<\/td>\n

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< 0.1 Ω·cm<\/p>\n<\/td>\n

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< 0.05 Ω·cm<\/p>\n<\/td>\n

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> 106 Ω·cm<\/p>\n<\/td>\n<\/tr>\n

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TTV
平整度<\/span><\/p>\n<\/td>\n

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≤ 15 μm<\/p>\n<\/td>\n<\/tr>\n

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BOW
弯曲度<\/span><\/p>\n<\/td>\n

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≤ 20 μm<\/p>\n<\/td>\n<\/tr>\n

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Ga Face Surface Roughness
Ga面粗糙度<\/span><\/p>\n<\/td>\n

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< 0.2 nm (polished);<\/p>\n<\/td>\n<\/tr>\n

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or < 0.3 nm (polished and surface treatment for epitaxy)<\/p>\n<\/td>\n<\/tr>\n

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N Face Surface Roughness
N面粗糙度<\/span><\/p>\n<\/td>\n

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0.5 ~1.5 μm<\/p>\n<\/td>\n<\/tr>\n

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option: 1~3 nm (fine ground); < 0.2 nm (polished)<\/p>\n<\/td>\n<\/tr>\n

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Dislocation Density
位错密度<\/span><\/p>\n<\/td>\n

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From 1 x 105 to 3 x 106 cm-2 (calculated by CL)*<\/p>\n<\/td>\n<\/tr>\n

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Macro Defect Density
缺陷密度<\/span><\/p>\n<\/td>\n

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< 2 cm-2<\/p>\n<\/td>\n<\/tr>\n

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Useable Area
有效面积<\/span><\/p>\n<\/td>\n

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> 90% (edge and macro defects exclusion)<\/p>\n<\/td>\n<\/tr>\n

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Can be customized according to customer requirements, different structure of silicon, sapphire, SiC based GaN epitaxial sheet.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

<\/p>\n

Gallium nitride (GaN), like silicon carbide (SiC) materials, belongs to the third generation of semiconductor materials with wide band gap width, with large band gap width, high thermal conductivity, high electron saturation migration rate, and high breakdown electric field outstanding characteristics.GaN devices have a wide range of application prospects in high frequency, high speed and high power demand fields such as LED energy-saving lighting, laser projection display, new energy vehicles, smart grid, 5G communication.<\/p>","protected":false},"featured_media":881,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[54,26],"product_tag":[],"class_list":{"0":"post-2215","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-gallium-oxide-ga203","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/ko\/wp-json\/wp\/v2\/product\/2215","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/ko\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/ko\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/ko\/wp-json\/wp\/v2\/comments?post=2215"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/ko\/wp-json\/wp\/v2\/media\/881"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/ko\/wp-json\/wp\/v2\/media?parent=2215"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/ko\/wp-json\/wp\/v2\/product_brand?post=2215"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/ko\/wp-json\/wp\/v2\/product_cat?post=2215"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/ko\/wp-json\/wp\/v2\/product_tag?post=2215"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}