When the mechanical arm of the ASM machine fed the 8,427th wafer into the reaction chamber, the SiC coating sensor embedded in the cavity wall was collecting temperature data at a frequency of 2,000 times per second. The thermal radiation coefficient of its β-SiC coating was stable at 0.92±0.01, which was 60% lower than the temperature measurement error of the traditional Al₂O₃ coating.<\/span><\/p>\n In extreme halfgeleiderproductieomgevingen, is onze gepatenteerde siliciumcarbide (SIC) coatingtechnologie de beschermingsnormen voor hoge temperatuur opnieuw gedefinieerd. Dit nanoschaalcoating bereid door het chemische dampdepositie (CVD) -proces heeft een MOHS -hardheid van 9,2, gelijk aan 90% natuurlijke diamanten, maar toch bezit het uitgebreide prestaties die traditionele materialen niet kunnen evenaren:<\/span><\/p>\n Stabiliteit op hoge temperatuur en chemische inertie<\/span><\/strong> Dubbele zuivering garantie<\/span><\/strong> De kunst van thermisch management<\/span><\/strong> Structurele betrouwbaarheid<\/span><\/strong> <\/p>\n Semicera heeft een hoge SiC-gecoate susceptor voor ASM, beschikbaar in 6 inch of 8 inch, wat uitstekende prestaties kan bieden en u kan helpen de productie-effici\u00ebntie en productkwaliteit te vergroten.<\/p>","protected":false},"featured_media":560,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[16,17],"product_tag":[],"class_list":{"0":"post-1298","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-cvd-sic","7":"product_cat-si-epitaxial-parts","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product\/1298","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/comments?post=1298"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/media\/560"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/media?parent=1298"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product_brand?post=1298"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product_cat?post=1298"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product_tag?post=1298"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
When the temperature of the reaction chamber soared to 1600℃, the oxidation rate of the SiC coating was still lower than 0.1μm\/h (ASTM G54 standard test data), which was attributed to the spontaneously formed 2nm thick SiO₂ protective film on its surface. After a 5000-hour accelerated aging test in a highly corrosive atmosphere containing Cl₂, HF, etc., the surface roughness change rate of the coating was less than 3%, perfectly solving the problem of particle release of the graphite substrate in the PECVD process.<\/span><\/p>\n
The base material is made of high-purity graphite formed by isostatic pressing (ash content < 5ppm), combined with a 99.999% purity SiC coating, which keeps the overall impurity content at the ppb level. This combination enables the device to reduce the background impurity concentration by two orders of magnitude in the MBE (Molecular Beam Epitaxy) process.<\/span><\/p>\n
The material combination exhibits an astonishing heating rate of 35 ° C \/s (measured data from a 200mm wafer), with an isotropic thermal conductivity of 120W\/m·K. Infrared thermal imaging in the ASM Eagle 12 reaction chamber shows that the surface temperature deviation of the 300mm wafer is only ±1.8℃, which is attributed to our original gradient transition layer design – by controlling the directional growth of β -sic whiskers, the coefficient of thermal expansion presents a perfect linear transition from the substrate to the surface.<\/span><\/p>\n
The stress buffering architecture optimized by finite element analysis ensures that the interinterface shear strength remains at 98% of the initial value after 100,000 thermal cycles (RT→1200℃). In the SEMICON West live demonstration in 2024, our test sample still passed the helium mass spectrometry leak detection test (leak rate < 1×10⁻⁹ Pa·m³\/s) after being subjected to rapid heating and cooling at 1500 ° C for 5 minutes.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n![\"Single](\"\/wp-content\/uploads\/2025\/09\/3438b44d74867c04.webp\")
<\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n![\"Semicera](\"\/wp-content\/uploads\/2025\/09\/b1dd0bcab1675ff4.webp\")
<\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n![\"Semicera](\"\/wp-content\/uploads\/2025\/09\/2b946d2b4b61306d.webp\")
<\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n![\"Semicera](\"\/wp-content\/uploads\/2025\/09\/2190bb9ce5c1d546.webp\")
<\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n![\"Apparatuurmachine\"](\"\/wp-content\/uploads\/2025\/09\/081b6529d68ead23.webp\")
<\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n![\"CNN](\"\/wp-content\/uploads\/2025\/09\/a4132b2b399abbac.webp\")
<\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n![\"Onze](\"\/wp-content\/uploads\/2025\/09\/b07f222c0ec0ab8d.webp\")
<\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"