{"id":1397,"date":"2025-09-11T05:28:53","date_gmt":"2025-09-11T05:28:53","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/silicon-carbide-epitaxy\/"},"modified":"2026-04-29T15:33:45","modified_gmt":"2026-04-29T07:33:45","slug":"silicon-carbide-epitaxy","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/nl\/product\/silicon-carbide-epitaxy\/","title":{"rendered":"Silicon Carbide Epitaxy"},"content":{"rendered":"
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Semicera\u2019s Silicon Carbide Epitaxy<\/strong> is engineered to meet the rigorous demands of modern semiconductor applications. By utilizing advanced epitaxial growth techniques, we ensure that each silicon carbide layer exhibits exceptional crystalline quality, uniformity, and minimal defect density. These characteristics are crucial for developing high-performance power electronics, where efficiency and thermal management are paramount.<\/span><\/p>\n

The Silicon Carbide Epitaxy<\/strong> process at Semicera is optimized to produce epitaxial layers with precise thickness and doping control, ensuring consistent performance across a range of devices. This level of precision is essential for applications in electric vehicles, renewable energy systems, and high-frequency communications, where reliability and efficiency are critical.<\/span><\/p>\n

Moreover, Semicera\u2019s Silicon Carbide Epitaxy<\/strong> offers enhanced thermal conductivity and higher breakdown voltage, making it the preferred choice for devices that operate under extreme conditions. These properties contribute to longer device lifetimes and improved overall system efficiency, particularly in high-power and high-temperature environments.<\/span><\/p>\n

Semicera also provides customization options for Silicon Carbide Epitaxy<\/strong>, allowing for tailored solutions that meet specific device requirements. Whether for research or large-scale production, our epitaxial layers are designed to support the next generation of semiconductor innovations, enabling the development of more powerful, efficient, and reliable electronic devices.<\/span><\/p>\n

By integrating cutting-edge technology and stringent quality control processes, Semicera ensures that our Silicon Carbide Epitaxy<\/strong> products not only meet but exceed industry standards. This commitment to excellence makes our epitaxial layers the ideal foundation for advanced semiconductor applications, paving the way for breakthroughs in power electronics and optoelectronics.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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Items<\/p>\n<\/td>\n

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Productie<\/p>\n<\/td>\n

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Onderzoek<\/p>\n<\/td>\n

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Stom<\/p>\n<\/td>\n<\/tr>\n

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Kristalparameters<\/p>\n<\/td>\n<\/tr>\n

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Polytype<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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Oppervlakte -ori\u00ebntatiefout<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Elektrische parameters<\/p>\n<\/td>\n<\/tr>\n

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Dopant<\/p>\n<\/td>\n

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n-type stikstof<\/p>\n<\/td>\n<\/tr>\n

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Weerstand<\/p>\n<\/td>\n

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0.015-0.025OHM \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Mechanische parameters<\/p>\n<\/td>\n<\/tr>\n

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Diameter<\/p>\n<\/td>\n

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150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

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Dikte<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Primaire platte ori\u00ebntatie<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Primaire platte lengte<\/p>\n<\/td>\n

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47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

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Secundaire flat<\/p>\n<\/td>\n

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Geen<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n<\/tr>\n

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Boog<\/p>\n<\/td>\n

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-15 \u03bcm ~ 15 \u03bcm<\/p>\n<\/td>\n

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-35 \u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

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-45\u03bcm ~ 45 urm<\/p>\n<\/td>\n<\/tr>\n

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Kronkelen<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Voorste (si-face) ruwheid (AFM)<\/p>\n<\/td>\n

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Ra\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Structuur<\/p>\n<\/td>\n<\/tr>\n

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Micropipe dichtheid<\/p>\n<\/td>\n

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<1 EA\/CM2<\/p>\n<\/td>\n

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<10 EA\/CM2<\/p>\n<\/td>\n

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<15 EA\/CM2<\/p>\n<\/td>\n<\/tr>\n

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Metaalonzuiverheden<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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NA<\/p>\n<\/td>\n<\/tr>\n

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BPD<\/p>\n<\/td>\n

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\u22641500 EA\/CM2<\/p>\n<\/td>\n

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\u22643000 EA\/CM2<\/p>\n<\/td>\n

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NA<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 EA\/CM2<\/p>\n<\/td>\n

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\u22641000 EA\/CM2<\/p>\n<\/td>\n

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NA<\/p>\n<\/td>\n<\/tr>\n

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Voorste kwaliteit<\/p>\n<\/td>\n<\/tr>\n

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Voorkant<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Oppervlakte -afwerking<\/p>\n<\/td>\n

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Si-face CMP<\/p>\n<\/td>\n<\/tr>\n

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Deeltjes<\/p>\n<\/td>\n

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\u226460EA\/wafer (grootte \u2265 0,3 \u03bcm)<\/p>\n<\/td>\n

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NA<\/p>\n<\/td>\n<\/tr>\n

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Krassen<\/p>\n<\/td>\n

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\u22645EA\/mm. Cumulatieve lengte \u2264diameter<\/p>\n<\/td>\n

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Cumulatieve lengte \u22642*diameter<\/p>\n<\/td>\n

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NA<\/p>\n<\/td>\n<\/tr>\n

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Sinaasappelschil\/putten\/vlekken\/strepen\/scheuren\/besmetting<\/p>\n<\/td>\n

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Geen<\/p>\n<\/td>\n

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NA<\/p>\n<\/td>\n<\/tr>\n

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Edge -chips\/inspringen\/breuk\/hexplaten<\/p>\n<\/td>\n

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Geen<\/p>\n<\/td>\n<\/tr>\n

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Polytype -gebieden<\/p>\n<\/td>\n

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Geen<\/p>\n<\/td>\n

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Cumulatief gebied \u226420%<\/p>\n<\/td>\n

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Cumulatief gebied \u226430%<\/p>\n<\/td>\n<\/tr>\n

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Laser markering vooraan<\/p>\n<\/td>\n

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Geen<\/p>\n<\/td>\n<\/tr>\n

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Rugkwaliteit<\/p>\n<\/td>\n<\/tr>\n

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Back Finish<\/p>\n<\/td>\n

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C-gezicht CMP<\/p>\n<\/td>\n<\/tr>\n

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Krassen<\/p>\n<\/td>\n

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\u22645ea\/mm, cumulatieve lengte \u22642*diameter<\/p>\n<\/td>\n

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NA<\/p>\n<\/td>\n<\/tr>\n

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Achterafwijkingen (randchips\/inspringen)<\/p>\n<\/td>\n

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Geen<\/p>\n<\/td>\n<\/tr>\n

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Terug ruwheid<\/p>\n<\/td>\n

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Ra\u22640,2 nm (5\u03bcm*5\u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Lasergrondbekleding<\/p>\n<\/td>\n

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1 mm (van bovenrand)<\/p>\n<\/td>\n<\/tr>\n

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Rand<\/p>\n<\/td>\n<\/tr>\n

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Rand<\/p>\n<\/td>\n

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Schuif<\/p>\n<\/td>\n<\/tr>\n

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Verpakking<\/p>\n<\/td>\n<\/tr>\n

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Verpakking<\/p>\n<\/td>\n

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Epi-ready met vacu\u00fcmverpakkingen<\/p>\n

Multi-wafer cassette verpakking<\/p>\n<\/td>\n<\/tr>\n

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*OPMERKINGEN: \"NA\" betekent dat er geen aanvraagitems die niet worden genoemd, verwijzen naar semi-STD.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Sic <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Silicon Carbide Epitaxy\u2013 High-quality epitaxial layers tailored for advanced semiconductor applications, offering superior performance and reliability for power electronics and optoelectronic devices.<\/p>","protected":false},"featured_media":1099,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[22,21],"product_tag":[],"class_list":{"0":"post-1397","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-porous-graphite","7":"product_cat-specialty-graphite","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product\/1397","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/comments?post=1397"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/media\/1099"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/media?parent=1397"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product_brand?post=1397"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product_cat?post=1397"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product_tag?post=1397"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}