{"id":2212,"date":"2025-09-11T05:33:27","date_gmt":"2025-09-11T05:33:27","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/silicon-carbide-substratessic-wafers\/"},"modified":"2026-04-29T15:28:07","modified_gmt":"2026-04-29T07:28:07","slug":"silicon-carbide-substratessic-wafers","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/nl\/product\/silicon-carbide-substratessic-wafers\/","title":{"rendered":"Silicon Carbide Substrates|SiC Wafers"},"content":{"rendered":"

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\"SiC-Wafer\" <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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Silicon carbide (SiC) single crystal material has a large band gap width (~Si 3 times), high thermal conductivity (~Si 3.3 times or GaAs 10 times), high electron saturation migration rate (~Si 2.5 times), high breakdown electric field (~Si 10 times or GaAs 5 times) and other outstanding characteristics.<\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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SiC devices have irreplaceable advantages in the field of high temperature, high pressure, high frequency, high power electronic devices and extreme environmental applications such as aerospace, military, nuclear energy, etc., make up for the defects of traditional semiconductor material devices in practical applications, and are gradually becoming the mainstream of power semiconductors.<\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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4H-SiC Silicon carbide substrate specifications<\/p>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
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Item项目
<\/span><\/p>\n<\/td>\n

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Specifications参数
<\/span><\/p>\n<\/td>\n<\/tr>\n

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Polytype
晶型<\/span><\/p>\n<\/td>\n

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4H -SiC<\/p>\n<\/td>\n

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6H- SiC<\/p>\n<\/td>\n<\/tr>\n

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Diameter
晶圆直径<\/span><\/p>\n<\/td>\n

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2 inch | 3 inch | 4 inch | 6inch<\/p>\n<\/td>\n

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2 inch | 3 inch | 4 inch | 6inch<\/p>\n<\/td>\n<\/tr>\n

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Dikte
厚度<\/span><\/p>\n<\/td>\n

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330 μm ~ 350 μm<\/p>\n<\/td>\n

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330 μm ~ 350 μm<\/p>\n<\/td>\n<\/tr>\n

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Geleidbaarheid
导电类型<\/span><\/p>\n<\/td>\n

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N – type \/ Semi-insulating
N型导电片 <\/span>\/ <\/span>半绝缘片<\/span><\/p>\n<\/td>\n

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N – type \/ Semi-insulating
N型导电片 <\/span>\/ <\/span>半绝缘片<\/span><\/p>\n<\/td>\n<\/tr>\n

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Dopant
掺杂剂<\/span><\/p>\n<\/td>\n

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N2 ( Nitrogen )V ( Vanadium )<\/p>\n<\/td>\n

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N2 ( Nitrogen )  V ( Vanadium )<\/p>\n<\/td>\n<\/tr>\n

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Ori\u00ebntatie
晶向<\/span><\/p>\n<\/td>\n

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On axis <0001>
Off axis <0001> off 4°<\/p>\n<\/td>\n

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On axis <0001>
Off axis <0001> off 4°<\/p>\n<\/td>\n<\/tr>\n

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Weerstand
电阻率<\/span><\/p>\n<\/td>\n

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0.015 ~ 0.03 ohm-cm
(4H-N)<\/p>\n<\/td>\n

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0.02 ~ 0.1 ohm-cm
(6H-N)<\/p>\n<\/td>\n<\/tr>\n

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Micropipe Density(MPD)
微管密度<\/span><\/p>\n<\/td>\n

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≤10\/cm2  ~ ≤1\/cm2<\/p>\n<\/td>\n

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≤10\/cm2  ~ ≤1\/cm2<\/p>\n<\/td>\n<\/tr>\n

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TTV
总厚度变化<\/span><\/p>\n<\/td>\n

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≤ 15 μm<\/p>\n<\/td>\n

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≤ 15 μm<\/p>\n<\/td>\n<\/tr>\n

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Bow \/ Warp
翘曲度<\/span><\/p>\n<\/td>\n

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≤25 μm<\/p>\n<\/td>\n

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≤25 μm<\/p>\n<\/td>\n<\/tr>\n

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Surface
表面处理<\/span><\/p>\n<\/td>\n

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DSP\/SSP<\/p>\n<\/td>\n

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DSP\/SSP<\/p>\n<\/td>\n<\/tr>\n

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Grade
产品等级<\/span><\/p>\n<\/td>\n

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Production \/ Research grade<\/p>\n<\/td>\n

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Production \/ Research grade<\/p>\n<\/td>\n<\/tr>\n

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Crystal Stacking Sequence
堆积方式<\/span><\/p>\n<\/td>\n

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ABCB<\/p>\n<\/td>\n

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ABCABC<\/p>\n<\/td>\n<\/tr>\n

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Lattice parameter
晶格参数<\/span><\/p>\n<\/td>\n

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a=3.076A , c=10.053A<\/p>\n<\/td>\n

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a=3.073A , c=15.117A<\/p>\n<\/td>\n<\/tr>\n

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Eg\/eV(Band-gap)
禁带宽度<\/span><\/p>\n<\/td>\n

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3.27 eV<\/p>\n<\/td>\n

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3.02 eV<\/p>\n<\/td>\n<\/tr>\n

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ε(Dielectric Constant)
介电常数<\/span><\/p>\n<\/td>\n

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9.6<\/p>\n<\/td>\n

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9.66<\/p>\n<\/td>\n<\/tr>\n

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Refraction Index
折射率<\/span><\/p>\n<\/td>\n

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n0 =2.719 ne =2.777<\/p>\n<\/td>\n

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n0 =2.707 , ne =2.755<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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6H-SiC Silicon Carbide substrate specifications <\/p>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
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Item项目<\/p>\n<\/td>\n

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 Specifications参数<\/p>\n<\/td>\n<\/tr>\n

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Polytype
晶型<\/span><\/p>\n<\/td>\n

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6H-SiC<\/p>\n<\/td>\n<\/tr>\n

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Diameter
晶圆直径<\/span><\/p>\n<\/td>\n

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4 inch | 6inch<\/p>\n<\/td>\n<\/tr>\n

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Dikte
厚度<\/span><\/p>\n<\/td>\n

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350μm ~ 450μm<\/p>\n<\/td>\n<\/tr>\n

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Geleidbaarheid
导电类型<\/span><\/p>\n<\/td>\n

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N – type \/ Semi-insulating
N型导电片 <\/span>\/ <\/span>半绝缘片<\/span><\/p>\n<\/td>\n<\/tr>\n

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Dopant
掺杂剂<\/span><\/p>\n<\/td>\n

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N2( Nitrogen )
V ( Vanadium )<\/p>\n<\/td>\n<\/tr>\n

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Ori\u00ebntatie
晶向<\/span><\/p>\n<\/td>\n

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<0001> off 4°± 0.5°<\/p>\n<\/td>\n<\/tr>\n

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Weerstand
电阻率<\/span><\/p>\n<\/td>\n

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0.02 ~ 0.1 ohm-cm
(6H-N Type)<\/p>\n<\/td>\n<\/tr>\n

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Micropipe Density(MPD)
微管密度<\/span><\/p>\n<\/td>\n

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≤ 10\/cm2<\/p>\n<\/td>\n<\/tr>\n

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TTV
总厚度变化<\/span><\/p>\n<\/td>\n

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≤ 15 μm<\/p>\n<\/td>\n<\/tr>\n

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Bow \/ Warp
翘曲度<\/span><\/p>\n<\/td>\n

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≤25 μm<\/p>\n<\/td>\n<\/tr>\n

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Surface
表面处理<\/span><\/p>\n<\/td>\n

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Si Face: CMP, Epi-Ready
C Face: Optical Polish<\/p>\n<\/td>\n<\/tr>\n

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Grade
产品等级<\/span><\/p>\n<\/td>\n

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Research grade<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

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Semicera Energy Technology Co., Ltd. is a leading supplier specializing in wafer and advanced semiconductor consumables. We are dedicated to providing high-quality, reliable, and innovative products to semiconductor manufacturing, photovoltaic industry and other related fields.Our product line includes SiC\/TaC coated graphite products and ceramic products, encompassing various materials such as silicon carbide, silicon nitride, and aluminum oxide and etc.At present,we are the only manufacturer to provide purity 99.9999% SiC coating and 99.9% recrystallized silicon carbide. The max SiC coating length we can do 2640mm.<\/p>","protected":false},"featured_media":905,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[24,39],"product_tag":[],"class_list":{"0":"post-2212","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-silicon-carbide-ceramic","7":"product_cat-silicon-carbide-plate","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product\/2212","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/comments?post=2212"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/media\/905"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/media?parent=2212"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product_brand?post=2212"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product_cat?post=2212"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product_tag?post=2212"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}