{"id":2215,"date":"2025-09-11T05:33:27","date_gmt":"2025-09-11T05:33:27","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/gallium-nitride-substratesgan-wafers\/"},"modified":"2026-04-29T15:28:08","modified_gmt":"2026-04-29T07:28:08","slug":"gallium-nitride-substratesgan-wafers","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/nl\/product\/gallium-nitride-substratesgan-wafers\/","title":{"rendered":"Gallium nitride -substraten | Gan Wafers"},"content":{"rendered":"

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\"Gan <\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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De halfgeleider -materialen van de derde generatie omvatten voornamelijk SIC, GAN, Diamond, enz., Omdat de bandafstandbreedte (bijv.) Groter is dan of gelijk is aan 2,3 elektronenvolt (EV), ook bekend als brede band gap semiconductor -materialen. Vergeleken met de eerste en tweede generatie halfgeleidermaterialen, hebben de halfgeleidermaterialen van de derde generatie de voordelen van een hoge thermische geleidbaarheid, elektrisch veld met hoge afbraak, hoge verzadigde elektronenmigratiesnelheid en hoge bindingsergie, die kunnen voldoen aan de nieuwe vereisten van moderne elektronische technologie voor hoge temperatuur, hoog vermogen, hoge druk, hoge frequentie en bestraling resistentie en andere HARSH -omstandigheden. Het heeft belangrijke toepassingsperspectieven op het gebied van nationale verdediging, luchtvaart, ruimtevaart, olie -exploratie, optische opslag, enz., En kan energieverlies verminderen met meer dan 50% in veel strategische industrie\u00ebn zoals breedbandcommunicatie, zonne -energie, automobielproductie, halfgeleiderverlichting en smart grid en smart grid en smart grid en smart grid.<\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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Item 项目<\/p>\n<\/td>\n

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GaN-FS-C-U-C50<\/p>\n<\/td>\n

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GaN-FS-C-N-C50<\/p>\n<\/td>\n

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GaN-FS-C-SI-C50<\/p>\n<\/td>\n<\/tr>\n

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Diameter
晶圆直径<\/span><\/p>\n<\/td>\n

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50.8 ± 1 mm<\/p>\n<\/td>\n<\/tr>\n

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Dikte厚度<\/span><\/p>\n<\/td>\n

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350 ± 25 μm<\/p>\n<\/td>\n<\/tr>\n

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Ori\u00ebntatie
晶向<\/span><\/p>\n<\/td>\n

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C plane (0001) off angle toward M-axis 0.35 ± 0.15°<\/p>\n<\/td>\n<\/tr>\n

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Prime flat
主定位边<\/span><\/p>\n<\/td>\n

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(1-100) 0 ± 0.5°, 16 ± 1 mm<\/p>\n<\/td>\n<\/tr>\n

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Secundaire flat
次定位边<\/span><\/p>\n<\/td>\n

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(11-20) 0 ± 3°, 8 ± 1 mm<\/p>\n<\/td>\n<\/tr>\n

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Geleidbaarheid
导电性<\/span><\/p>\n<\/td>\n

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N-type<\/p>\n<\/td>\n

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N-type<\/p>\n<\/td>\n

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Semi-aanmelding<\/p>\n<\/td>\n<\/tr>\n

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Weerstand (300K)
电阻率<\/span><\/p>\n<\/td>\n

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< 0.1 Ω·cm<\/p>\n<\/td>\n

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< 0.05 Ω·cm<\/p>\n<\/td>\n

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> 106 Ω·cm<\/p>\n<\/td>\n<\/tr>\n

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TTV
平整度<\/span><\/p>\n<\/td>\n

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≤ 15 μm<\/p>\n<\/td>\n<\/tr>\n

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BOOG
弯曲度<\/span><\/p>\n<\/td>\n

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≤ 20 μm<\/p>\n<\/td>\n<\/tr>\n

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Ga gezichtsoppervlak ruwheid
GA面粗糙度<\/span><\/p>\n<\/td>\n

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<0,2 nm (gepolijst);<\/p>\n<\/td>\n<\/tr>\n

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of <0,3 nm (gepolijste en oppervlaktebehandeling voor epitaxie)<\/p>\n<\/td>\n<\/tr>\n

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N ruwheid van het gezichtoppervlak
N面粗糙度<\/span><\/p>\n<\/td>\n

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0.5 ~1.5 μm<\/p>\n<\/td>\n<\/tr>\n

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Optie: 1 ~ 3 nm (fijne grond); <0,2 nm (gepolijst)<\/p>\n<\/td>\n<\/tr>\n

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Dislocatiedichtheid
位错密度<\/span><\/p>\n<\/td>\n

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Van 1 x 105 tot 3 x 106 cm-2 (berekend door CL)*<\/p>\n<\/td>\n<\/tr>\n

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Macro defectdichtheid
缺陷密度<\/span><\/p>\n<\/td>\n

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<2 cm-2<\/p>\n<\/td>\n<\/tr>\n

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Bruikbaar gebied
有效面积<\/span><\/p>\n<\/td>\n

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> 90% (rand en macro -defecten uitsluiting)<\/p>\n<\/td>\n<\/tr>\n

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Kan worden aangepast aan de eisen van de klant, verschillende structuur van silicium, saffier, op siC gebaseerde gan epitaxiale blad.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

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Gallium nitride (GaN), like silicon carbide (SiC) materials, belongs to the third generation of semiconductor materials with wide band gap width, with large band gap width, high thermal conductivity, high electron saturation migration rate, and high breakdown electric field outstanding characteristics.GaN devices have a wide range of application prospects in high frequency, high speed and high power demand fields such as LED energy-saving lighting, laser projection Display, nieuwe energievoertuigen, Smart Grid, 5G -communicatie.<\/p>","protected":false},"featured_media":881,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[54,26],"product_tag":[],"class_list":{"0":"post-2215","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-gallium-oxide-ga203","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product\/2215","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/comments?post=2215"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/media\/881"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/media?parent=2215"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product_brand?post=2215"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product_cat?post=2215"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product_tag?post=2215"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}