{"id":2219,"date":"2025-09-11T05:33:27","date_gmt":"2025-09-11T05:33:27","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/soi-wafers\/"},"modified":"2026-04-29T15:28:09","modified_gmt":"2026-04-29T07:28:09","slug":"soi-wafers","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/nl\/product\/soi-wafers\/","title":{"rendered":"SOI Wafers"},"content":{"rendered":"

<\/p>\n

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\"SOI<\/p>\n

Application field<\/p>\n

1. High-speed integrated circuit<\/p>\n

2. Microwave devices<\/p>\n

3. High temperature integrated circuit<\/p>\n

4. Power devices<\/p>\n

5. Low power integrated circuit<\/p>\n

6. MEMS<\/p>\n

7. Low voltage integrated circuit<\/p>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
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Item<\/p>\n<\/td>\n

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Argument<\/p>\n<\/td>\n<\/tr>\n

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Overall<\/p>\n<\/td>\n

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Wafer Diameter
晶圆尺寸(mm)<\/p>\n<\/td>\n

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50\/75\/100\/125\/150\/200mm±25um<\/p>\n<\/td>\n<\/tr>\n

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Bow\/Warp
翘曲度(<um)<\/p>\n<\/td>\n

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<10um<\/p>\n<\/td>\n<\/tr>\n

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Deeltjes
颗粒度(<ea)<\/p>\n<\/td>\n

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0.3um<30ea<\/p>\n<\/td>\n<\/tr>\n

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Flats\/Notch
定位边\/定位槽<\/p>\n<\/td>\n

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Flat or Notch<\/p>\n<\/td>\n<\/tr>\n

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Edge Exclusion
边缘去除(mm)<\/p>\n<\/td>\n

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\/<\/p>\n<\/td>\n<\/tr>\n

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Device Layer
器件层<\/p>\n<\/td>\n

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Device-layer Type\/Dopant
器件层掺杂类型<\/p>\n<\/td>\n

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N-Type\/P-Type
B\/ P\/ Sb \/ As<\/p>\n<\/td>\n<\/tr>\n

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Device-layer Orientation
器件层晶向<\/p>\n<\/td>\n

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<1-0-0> \/ <1-1-1> \/ <1-1-0><\/p>\n<\/td>\n<\/tr>\n

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Device-layer Thickness
器件层厚度(um)<\/p>\n<\/td>\n

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0.1~300um<\/p>\n<\/td>\n<\/tr>\n

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Device-layer Resistivity
器件层电阻率(ohm•cm)<\/p>\n<\/td>\n

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0.001~100,000 ohm-cm<\/p>\n<\/td>\n<\/tr>\n

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Device-layer Particles
器件层颗粒度(<ea)<\/p>\n<\/td>\n

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<30ea@0.3<\/p>\n<\/td>\n<\/tr>\n

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Device Layer TTV
器件层TTV(<um)<\/p>\n<\/td>\n

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<10um<\/p>\n<\/td>\n<\/tr>\n

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Device Layer Finish
器件层表面处理<\/p>\n<\/td>\n

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Polished<\/p>\n<\/td>\n<\/tr>\n

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BOX<\/p>\n<\/td>\n

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Buried Thermal Oxide Thickness
埋氧层厚度(um)<\/p>\n<\/td>\n

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50nm(500Å)~15um<\/p>\n<\/td>\n<\/tr>\n

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Handle Layer
衬底<\/p>\n<\/td>\n

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Handle Wafer Type\/Dopant
衬底层类型<\/p>\n<\/td>\n

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N-Type\/P-Type
B\/ P\/ Sb \/ As<\/p>\n<\/td>\n<\/tr>\n

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Handle Wafer Orientation
衬底晶向<\/p>\n<\/td>\n

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<1-0-0> \/ <1-1-1> \/ <1-1-0><\/p>\n<\/td>\n<\/tr>\n

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Handle Wafer Resistivity
衬底电阻率(ohm•cm)<\/p>\n<\/td>\n

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0.001~100,000 ohm-cm<\/p>\n<\/td>\n<\/tr>\n

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Handle Wafer Thickness
衬底厚度(um)<\/p>\n<\/td>\n

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>100um<\/p>\n<\/td>\n<\/tr>\n

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Handle Wafer Finish
衬底表面处理<\/p>\n<\/td>\n

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Polished<\/p>\n<\/td>\n<\/tr>\n

\n

SOI wafers of target specifications can be customized according to customer requirements.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"CNN<\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

<\/p>\n

The SOI wafer is a sandwich-like structure with three layers; Including the top layer (device layer), the middle of the buried oxygen layer (for the insulating SiO2 layer) and the bottom substrate (bulk silicon). SOI wafers are produced using the SIMOX method and wafer bonding technology, which allows for thinner and more accurate device layers, uniform thickness and low defect density.<\/p>","protected":false},"featured_media":963,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[41,26],"product_tag":[],"class_list":{"0":"post-2219","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-sol-wafer","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product\/2219","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/comments?post=2219"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/media\/963"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/media?parent=2219"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product_brand?post=2219"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product_cat?post=2219"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/nl\/wp-json\/wp\/v2\/product_tag?post=2219"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}