With the advent of 8-inch silicon carbide (SiC) wafers, the requirements for various semiconductor processes have become increasingly stringent, especially for epitaxy processes where temperatures can exceed 2000 degrees Celsius. Traditional susceptor materials, such as graphite coated with silicon carbide, tend to sublimate at these high temperatures, disrupting the epitaxy process. However, CVD tantalum carbide (TaC) effectively addresses this issue, withstanding temperatures up to 2300 degrees Celsius and offering a longer service life. Contact Semicera’sCVD Tantalum Carbide Coated Halfmoon Partto explore more about our advanced solutions.
Semicera zapewnia specjalistyczne powłoki węglika tantalu (TAC) dla różnych elementów i nośników. Semicera leading coating process enables tantalum carbide (TaC) coatings to achieve high purity, high temperature stability and high chemical tolerance, improving product quality of SIC/GAN crystals and EPI layers (Graphite coated TaC susceptor), and extending the life of key reactor components. The use of tantalum carbide TaC coating is to solve the edge problem and improve the quality of crystal growth, and Semicera has breakthrough solved the tantalum carbide coating technology (CVD), reaching the international advanced level.
With the advent of 8-inch silicon carbide (SiC) wafers, the requirements for various semiconductor processes have become increasingly stringent, especially for epitaxy processes where temperatures can exceed 2000 degrees Celsius. Traditional susceptor materials, such as graphite coated with silicon carbide, tend to sublimate at these high temperatures, disrupting the epitaxy process. However, CVD tantalum carbide (TaC) effectively addresses this issue, withstanding temperatures up to 2300 degrees Celsius and offering a longer service life. Contact Semicera’s CVD Tantalum Carbide Coated Halfmoon Part Aby dowiedzieć się więcej o naszych zaawansowanych rozwiązaniach.
After years of development, Semicera has conquered the technology of CVD TaC with the joint efforts of the R&D department. Defects are easy to occur in the growth process of SiC wafers, but after using TaC, the difference is significant. Below is a comparison of wafers with and without TaC, as well as Simicera’ parts for single crystal growth.
Moreover, Semicera’s TaC-coated products exhibit a longer service life and greater high-temperature resistance compared to SiC coatings. Laboratory measurements have demonstrated that our TaC coatings can consistently perform at temperatures up to 2300 degrees Celsius for extended periods. Below are some examples of our samples:
