High purity porous tantalum carbide coated barrel

Semicera’s High Purity Porous Tantalum Carbide Coated Barrel is specifically designed for silicon carbide (SiC) crystal growth furnaces. Featuring a high-purity tantalum carbide coating and a porous structure, this barrel provides exceptional thermal stability and resistance to chemical corrosion. Semicera’s advanced coating technology ensures long-lasting performance and efficiency in SiC crystal growth processes, making it an ideal choice for demanding semiconductor applications.

Porous tantalum carbide coated barrel is tantalum carbide as the main coating material, tantalum carbide has excellent corrosion resistance, wear resistance and high temperature stability. It can effectively protect the base material from chemical erosion and high temperature atmosphere. The base material usually has the characteristics of high temperature resistance and corrosion resistance. It can provide good mechanical strength and chemical stability, and at the same time serve as the supporting basis of the tantalum carbide coating.

 

Semicera zapewnia specjalistyczne powłoki węglika tantalu (TAC) dla różnych elementów i nośników. Semicera leading coating process enables tantalum carbide (TaC) coatings to achieve high purity, high temperature stability and high chemical tolerance, improving product quality of SIC/GAN crystals and EPI layers (Graphite coated TaC susceptor), and extending the life of key reactor components. The use of tantalum carbide TaC coating is to solve the edge problem and improve the quality of crystal growth, and Semicera has breakthrough solved the tantalum carbide coating technology (CVD), reaching the international advanced level.

 

After years of development, Semicera has conquered the technology of CVD TaC with the joint efforts of the R&D department. Defects are easy to occur in the growth process of SiC wafers, but after using TaC, the difference is significant. Below is a comparison of wafers with and without TaC, as well as Simicera’ parts for single crystal growth.

Wysoka wydajność Tantalum Carbide Coating_ Popraw wydajność produkcji przemysłowej i zmniejsz koszty utrzymania.

Część TAC dla wzrostu pojedynczego kryształu

Przeciwko ciśnieniowej powłoka z węglikiem tantalu_ chroni sprzęt przed zużyciem i korozją.

Grafit z pierścieniem pokrytym TAC

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z TAC i bez

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Po użyciu TAC (po prawej)

Moreover, Semicera’s TaC-coated products exhibit a longer service life and greater high-temperature resistance compared to SiC coatings. Laboratory measurements have demonstrated that our TaC coatings can consistently perform at temperatures up to 2300 degrees Celsius for extended periods. Below are some examples of our samples:

 

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TAC powlekana podatnik

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Grafit z reaktorem pokrytym TAC

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Półcera robocza miejsce 2

Maszyna sprzętu

Semicera Ware House

Przetwarzanie CNN, czyszczenie chemiczne, powłoka CVD

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