Semiconductor Silicon based GaN epitaxy

Semicera Energy Technology Co., Ltd. is a leading supplier of advanced semiconductor ceramics and the only manufacturer in China that can simultaneously provide high-purity silicon carbide ceramic(especially the Recrystallized SiC) and CVD SiC coating. In addition, our company is also committed to ceramic fields such as alumina, aluminum nitride, zirconia, and silicon nitride, etc.

Silicon-based GaN epitaxy

 

 

 

Opis produktu

Our company provides SiC coating process services by CVD method on the surface of graphite, ceramics and other materials, so that special gases containing carbon and silicon react at high temperature to obtain high purity SiC molecules, molecules deposited on the surface of the coated materials, forming SIC protective layer.

Główne funkcje:

1. High temperature oxidation resistance:

the oxidation resistance is still very good when the temperature is as high as 1600 C.

2. High purity : made by chemical vapor deposition under high temperature chlorination condition.

3. Erosion resistance: high hardness, compact surface, fine particles.

4. Corrosion resistance: acid, alkali, salt and organic reagents.

 

 

 

 

 

 

Main Specifications of CVD-SIC Coating

 

 

SiC-CVD Properties

Crystal Structure

FCC β phase

Gęstość

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa  (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Przewodność cieplna

(W/mK)

300

 

 

 

 

 

 

 

 

Miejsce pracy półcesy

 

 

 

Półcera robocza miejsce 2

 

 

 

Maszyna sprzętu

 

 

 

Przetwarzanie CNN, czyszczenie chemiczne, powłoka CVD

 

 

 

Nasza usługa

 

 

 

 

 

 

 

 

 

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