Semicera Silicon Carbide Cantilever Wafer Paddle offers exceptional strength and thermal stability, making it ideal for high-temperature wafer handling. With its precision-engineered design, this Wafer Paddle ensures reliable performance. Semicera provides 30-day delivery, meeting your production needs swiftly and efficiently.Contact us for inquiries!
The Semicera SiC Cantilever Wafer Paddle is designed to meet the demands of modern semiconductor manufacturing. This wafer paddle offers excellent mechanical strength and thermal resistance, which is critical for handling wafers in high-temperature environments.
The SiC cantilever design enables precise wafer placement, reducing the risk of damage during handling. Its high thermal conductivity ensures that the wafer remains stable even under extreme conditions, which is critical for maintaining production efficiency.
In addition to its structural advantages, Semicera’s SiC Cantilever Wafer Paddle also offers advantages in weight and durability. The lightweight construction makes it easier to handle and integrate into existing systems, while the high-density SiC material ensures long-lasting durability under demanding conditions.
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Fizyczne właściwości rekrystalizowanego węgliku krzemu |
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Nieruchomość |
Typowa wartość |
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Temperatura pracy (° C) |
1600 ° C (z tlenem), 1700 ° C (środowisko redukujące) |
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Treść sic |
> 99.96% |
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Darmowa zawartość SI |
<0,1% |
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Gęstość luzem |
2,60-2,70 g/cm3 |
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Pozorna porowatość |
<16% |
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Siła kompresji |
> 600 MPa |
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Zimna siła zginania |
80-90 MPa (20 ° C) |
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Gorąca siła zginania |
90-100 MPa (1400 ° C) |
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Rozszerzanie termiczne @1500 ° C. |
4.70 10-6/° C. |
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Przewodność cieplna @1200 ° C. |
23 W/m • k |
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Moduł sprężystości |
240 GPA |
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Odporność na wstrząsy termiczne |
Niezwykle dobry |
