Semicera Silicon Wafers are the cornerstone of modern semiconductor devices, offering unmatched purity and precision. Designed to meet the stringent demands of high-tech industries, these wafers ensure reliable performance and consistent quality. Trust Semicera for your cutting-edge electronic applications and innovative technology solutions.
Semicera Silicon Wafers are meticulously crafted to serve as the foundation for a wide array of semiconductor devices, from microprocessors to photovoltaic cells. These wafers are engineered with high precision and purity, ensuring optimal performance in various electronic applications.
Manufactured using advanced techniques, Semicera Silicon Wafers exhibit exceptional flatness and uniformity, which are crucial for achieving high yields in semiconductor fabrication. This level of precision helps in minimizing defects and improving the overall efficiency of electronic components.
The superior quality of Semicera Silicon Wafers is evident in their electrical characteristics, which contribute to the enhanced performance of semiconductor devices. With low impurity levels and high crystal quality, these wafers provide the ideal platform for developing high-performance electronics.
Available in various sizes and specifications, Semicera Silicon Wafers can be tailored to meet the specific needs of different industries, including computing, telecommunications, and renewable energy. Whether for large-scale manufacturing or specialized research, these wafers deliver reliable results.
Semicera is committed to supporting the growth and innovation of the semiconductor industry by providing high-quality silicon wafers that meet the highest industry standards. With a focus on precision and reliability, Semicera enables manufacturers to push the boundaries of technology, ensuring their products stay at the forefront of the market.
Rzeczy |
Produkcja |
Badania |
Atrapa |
Parametry kryształów |
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Polityp |
4H |
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Błąd orientacji powierzchni |
4±0.15° |
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Parametry elektryczne |
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Dopant |
azot typu N. |
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Oporność |
0,015-0,025OHM · cm |
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Parametry mechaniczne |
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Średnica |
150,0 ± 0,2 mm |
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Grubość |
350 ± 25 µm |
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Pierwotna płaska orientacja |
[1-100]±5° |
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Pierwotna płaska długość |
47,5 ± 1,5 mm |
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Wtórne mieszkanie |
Nic |
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TTV |
≤5 µm |
≤10 µm |
≤15 µm |
LTV |
≤3 μm (5 mm*5 mm) |
≤5 μm (5 mm*5 mm) |
≤10 μm (5 mm*5 mm) |
Ukłon |
-15 μm ~ 15 μm |
-35 μm ~ 35 μm |
-45 μm ~ 45 μm |
Osnowa |
≤35 µm |
≤45 µm |
≤55 µm |
Chropowatość z przodu (SI-FACE) (AFM) |
RA ≤ 0,2 nm (5 μm*5 μm) |
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Struktura |
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Gęstość mikropipe |
<1 ea/cm2 |
<10 ea/cm2 |
<15 ea/cm2 |
Zanieczyszczenia metalowe |
≤5E10atoms/cm2 |
Na |
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BPD |
≤1500 EA/CM2 |
≤3000 EA/CM2 |
Na |
TSD |
≤500 EA/CM2 |
≤1000 EA/CM2 |
Na |
Jakość z przodu |
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Przód |
Si |
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Wykończenie powierzchni |
SI-FACE CMP |
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Cząsteczki |
≤60ea/wafel (rozmiar ≥0,3 μm) |
Na |
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Zadrapania |
≤5EA/mm. Kumulatywna długość ≤ -diameter |
Skumulowana długość ≤2*średnica |
Na |
Skórka pomarańczowa/doły/plamy/prążki/pęknięcia/zanieczyszczenie |
Nic |
Na |
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Płyty krawędziowe/wkładki/złamanie/sześciokątne płyty |
Nic |
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Obszary politypowe |
Nic |
Obszar skumulowany ≤20% |
Obszar skumulowany ≤30% |
Przednie oznaczenie lasera |
Nic |
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Jakość wstecz |
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Wstecz |
CMP-FACE CMP |
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Zadrapania |
≤5EA/mm, kumulatywna długość ≤2*średnica |
Na |
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Wady tylne (chipsy krawędziowe/wentylatory) |
Nic |
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Chropowatość pleców |
RA ≤ 0,2 nm (5 μm*5 μm) |
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Oznaczenie lasera z tyłu |
1 mm (od górnej krawędzi) |
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Krawędź |
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Krawędź |
Ścięcie |
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Opakowanie |
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Opakowanie |
Epi-gotowe z opakowaniem próżniowym Opakowanie kaseta z wieloma falami |
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*Uwagi : „Na” oznacza, że brak wymienionych elementów, które nie wspomniane elementy mogą zapoznać się z pół-STD. |