{"id":1400,"date":"2025-09-11T05:28:53","date_gmt":"2025-09-11T05:28:53","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/ga2o3-epitaxy\/"},"modified":"2026-04-29T15:33:46","modified_gmt":"2026-04-29T07:33:46","slug":"ga2o3-epitaxy","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/pl\/product\/ga2o3-epitaxy\/","title":{"rendered":"Epitaksja GA2O3"},"content":{"rendered":"
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P\u00f3\u0142cesta<\/em> proudly offers Ga2<\/sub>O3<\/sub> Epitaxy<\/strong>, a state-of-the-art solution designed to push the boundaries of power electronics and optoelectronics. This advanced epitaxial technology leverages the unique properties of Gallium Oxide (Ga2<\/sub>O3<\/sub>) to deliver superior performance in demanding applications.<\/span><\/p>\n

Key Features:<\/strong><\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0Exceptional Wide Bandgap<\/strong>: Ga2<\/sub>O3<\/sub> Epitaxy<\/strong> features an ultra-wide bandgap, allowing for higher breakdown voltages and efficient operation in high-power environments.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0<\/strong>High Thermal Conductivity<\/strong>: The epitaxial layer provides excellent thermal conductivity, ensuring stable operation even under high-temperature conditions, making it ideal for high-frequency devices.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0<\/strong>Superior Material Quality<\/strong>: Achieve high crystal quality with minimal defects, ensuring optimal device performance and longevity, especially in critical applications such as power transistors and UV detectors.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0\u2022\u00a0<\/strong>Versatility in Applications<\/strong>: Perfectly suited for power electronics, RF applications, and optoelectronics, providing a reliable foundation for next-generation semiconductor devices.<\/span><\/p>\n

\u00a0<\/p>\n

Discover the potential of Ga2<\/sub>O3<\/sub> Epitaxy<\/strong> with Semicera\u2019s innovative solutions. Our epitaxial products are designed to meet the highest standards of quality and performance, enabling your devices to operate with maximum efficiency and reliability. Choose Semicera for cutting-edge semiconductor technology.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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Rzeczy<\/p>\n<\/td>\n

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Produkcja<\/p>\n<\/td>\n

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Badania<\/p>\n<\/td>\n

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Atrapa<\/p>\n<\/td>\n<\/tr>\n

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Parametry kryszta\u0142\u00f3w<\/p>\n<\/td>\n<\/tr>\n

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Polityp<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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B\u0142\u0105d orientacji powierzchni<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Parametry elektryczne<\/p>\n<\/td>\n<\/tr>\n

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Dopant<\/p>\n<\/td>\n

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azot typu N.<\/p>\n<\/td>\n<\/tr>\n

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Oporno\u015b\u0107<\/p>\n<\/td>\n

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0,015-0,025OHM \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Parametry mechaniczne<\/p>\n<\/td>\n<\/tr>\n

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\u015arednica<\/p>\n<\/td>\n

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150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

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Grubo\u015b\u0107<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Pierwotna p\u0142aska orientacja<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Pierwotna p\u0142aska d\u0142ugo\u015b\u0107<\/p>\n<\/td>\n

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47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

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Wt\u00f3rne mieszkanie<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n<\/tr>\n

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Uk\u0142on<\/p>\n<\/td>\n

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-15 \u03bcm ~ 15 \u03bcm<\/p>\n<\/td>\n

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-35 \u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

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-45 \u03bcm ~ 45 \u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Osnowa<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Chropowato\u015b\u0107 z przodu (SI-FACE) (AFM)<\/p>\n<\/td>\n

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RA \u2264 0,2 nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Struktura<\/p>\n<\/td>\n<\/tr>\n

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G\u0119sto\u015b\u0107 mikropipe<\/p>\n<\/td>\n

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<1 ea\/cm2<\/p>\n<\/td>\n

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<10 ea\/cm2<\/p>\n<\/td>\n

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<15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

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Zanieczyszczenia metalowe<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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BPD<\/p>\n<\/td>\n

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\u22641500 EA\/CM2<\/p>\n<\/td>\n

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\u22643000 EA\/CM2<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 EA\/CM2<\/p>\n<\/td>\n

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\u22641000 EA\/CM2<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Jako\u015b\u0107 z przodu<\/p>\n<\/td>\n<\/tr>\n

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Prz\u00f3d<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Wyko\u0144czenie powierzchni<\/p>\n<\/td>\n

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SI-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

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Cz\u0105steczki<\/p>\n<\/td>\n

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\u226460ea\/wafel (rozmiar \u22650,3 \u03bcm)<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Zadrapania<\/p>\n<\/td>\n

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\u22645EA\/mm. Kumulatywna d\u0142ugo\u015b\u0107 \u2264 -diameter<\/p>\n<\/td>\n

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Skumulowana d\u0142ugo\u015b\u0107 \u22642*\u015brednica<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Sk\u00f3rka pomara\u0144czowa\/do\u0142y\/plamy\/pr\u0105\u017cki\/p\u0119kni\u0119cia\/zanieczyszczenie<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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P\u0142yty kraw\u0119dziowe\/wk\u0142adki\/z\u0142amanie\/sze\u015bciok\u0105tne p\u0142yty<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n<\/tr>\n

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Obszary politypowe<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n

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Obszar skumulowany \u226420%<\/p>\n<\/td>\n

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Obszar skumulowany \u226430%<\/p>\n<\/td>\n<\/tr>\n

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Przednie oznaczenie lasera<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n<\/tr>\n

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Jako\u015b\u0107 wstecz<\/p>\n<\/td>\n<\/tr>\n

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Wstecz<\/p>\n<\/td>\n

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CMP-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

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Zadrapania<\/p>\n<\/td>\n

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\u22645EA\/mm, kumulatywna d\u0142ugo\u015b\u0107 \u22642*\u015brednica<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Wady tylne (chipsy kraw\u0119dziowe\/wentylatory)<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n<\/tr>\n

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Chropowato\u015b\u0107 plec\u00f3w<\/p>\n<\/td>\n

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RA \u2264 0,2 nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Oznaczenie lasera z ty\u0142u<\/p>\n<\/td>\n

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1 mm (od g\u00f3rnej kraw\u0119dzi)<\/p>\n<\/td>\n<\/tr>\n

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Kraw\u0119d\u017a<\/p>\n<\/td>\n<\/tr>\n

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Kraw\u0119d\u017a<\/p>\n<\/td>\n

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\u015aci\u0119cie<\/p>\n<\/td>\n<\/tr>\n

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Opakowanie<\/p>\n<\/td>\n<\/tr>\n

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Opakowanie<\/p>\n<\/td>\n

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Epi-gotowe z opakowaniem pr\u00f3\u017cniowym<\/p>\n

Opakowanie kaseta z wieloma falami<\/p>\n<\/td>\n<\/tr>\n

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*Uwagi \uff1a \u201eNa\u201d oznacza, \u017ce \u200b\u200bbrak wymienionych element\u00f3w, kt\u00f3re nie wspomniane elementy mog\u0105 zapozna\u0107 si\u0119 z p\u00f3\u0142-STD.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Wafle <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Ga2O3Epitaxy\u2013 Enhance your high-power electronic and optoelectronic devices with Semicera\u2019s Ga2O3Epitaxy, offering unmatched performance and reliability for advanced semiconductor applications.<\/p>","protected":false},"featured_media":826,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[54,26],"product_tag":[],"class_list":{"0":"post-1400","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-gallium-oxide-ga203","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product\/1400","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/comments?post=1400"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/media\/826"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/media?parent=1400"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product_brand?post=1400"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product_cat?post=1400"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product_tag?post=1400"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}