{"id":1403,"date":"2025-09-11T05:28:53","date_gmt":"2025-09-11T05:28:53","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/30mm-aluminum-nitride-wafer-substrate\/"},"modified":"2026-04-29T15:33:47","modified_gmt":"2026-04-29T07:33:47","slug":"30mm-aluminum-nitride-wafer-substrate","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/pl\/product\/30mm-aluminum-nitride-wafer-substrate\/","title":{"rendered":"Pod\u0142o\u017ce waflowe azotku aluminiowego 30 mm"},"content":{"rendered":"
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P\u00f3\u0142cesta<\/em> is proud to present the Pod\u0142o\u017ce waflowe azotku aluminiowego 30 mm<\/strong>, a top-tier material engineered to meet the stringent demands of modern electronic and optoelectronic applications. Aluminum Nitride (AlN) substrates are renowned for their outstanding thermal conductivity and electrical insulation properties, making them an ideal choice for high-performance devices.<\/span><\/p>\n

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Key Features:<\/strong><\/span><\/p>\n

\u00a0 \u00a0 \u00a0 \u00a0\u2022\u00a0 Exceptional Thermal Conductivity<\/strong>: The Pod\u0142o\u017ce waflowe azotku aluminiowego 30 mm<\/strong> boasts a thermal conductivity of up to 170 W\/mK, significantly higher than other substrate materials, ensuring efficient heat dissipation in high-power applications.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0 \u00a0\u2022\u00a0\u00a0<\/strong><\/span>High Electrical Insulation<\/strong>: With excellent electrical insulating properties, this substrate minimizes cross-talk and signal interference, making it ideal for RF and microwave applications.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0 \u00a0\u2022\u00a0\u00a0<\/strong><\/span>Mechanical Strength<\/strong>: The Pod\u0142o\u017ce waflowe azotku aluminiowego 30 mm<\/strong> offers superior mechanical strength and stability, ensuring durability and reliability even under rigorous operating conditions.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0 \u00a0\u2022\u00a0\u00a0<\/strong><\/span>Wszechstronne aplikacje<\/strong>: This substrate is perfect for use in high-power LEDs, laser diodes, and RF components, providing a robust and reliable foundation for your most demanding projects.<\/span><\/p>\n

\u00a0 \u00a0 \u00a0 \u00a0\u2022\u00a0\u00a0<\/strong><\/span>Precision Fabrication<\/strong>: Semicera ensures that each wafer substrate is fabricated with the highest precision, offering uniform thickness and surface quality to meet the exacting standards of advanced electronic devices.<\/span><\/p>\n

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Maximize the efficiency and reliability of your devices with Semicera\u2019s Pod\u0142o\u017ce waflowe azotku aluminiowego 30 mm<\/strong>. Our substrates are designed to deliver superior performance, ensuring that your electronic and optoelectronic systems operate at their best. Trust Semicera for cutting-edge materials that lead the industry in quality and innovation.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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Rzeczy<\/p>\n<\/td>\n

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Produkcja<\/p>\n<\/td>\n

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Badania<\/p>\n<\/td>\n

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Atrapa<\/p>\n<\/td>\n<\/tr>\n

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Parametry kryszta\u0142\u00f3w<\/p>\n<\/td>\n<\/tr>\n

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Polityp<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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B\u0142\u0105d orientacji powierzchni<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Parametry elektryczne<\/p>\n<\/td>\n<\/tr>\n

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Dopant<\/p>\n<\/td>\n

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azot typu N.<\/p>\n<\/td>\n<\/tr>\n

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Oporno\u015b\u0107<\/p>\n<\/td>\n

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0,015-0,025OHM \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Parametry mechaniczne<\/p>\n<\/td>\n<\/tr>\n

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\u015arednica<\/p>\n<\/td>\n

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150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

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Grubo\u015b\u0107<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Pierwotna p\u0142aska orientacja<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Pierwotna p\u0142aska d\u0142ugo\u015b\u0107<\/p>\n<\/td>\n

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47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

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Wt\u00f3rne mieszkanie<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n<\/tr>\n

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Uk\u0142on<\/p>\n<\/td>\n

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-15 \u03bcm ~ 15 \u03bcm<\/p>\n<\/td>\n

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-35 \u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

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-45 \u03bcm ~ 45 \u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Osnowa<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Chropowato\u015b\u0107 z przodu (SI-FACE) (AFM)<\/p>\n<\/td>\n

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RA \u2264 0,2 nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Struktura<\/p>\n<\/td>\n<\/tr>\n

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G\u0119sto\u015b\u0107 mikropipe<\/p>\n<\/td>\n

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<1 ea\/cm2<\/p>\n<\/td>\n

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<10 ea\/cm2<\/p>\n<\/td>\n

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<15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

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Zanieczyszczenia metalowe<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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BPD<\/p>\n<\/td>\n

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\u22641500 EA\/CM2<\/p>\n<\/td>\n

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\u22643000 EA\/CM2<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 EA\/CM2<\/p>\n<\/td>\n

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\u22641000 EA\/CM2<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Jako\u015b\u0107 z przodu<\/p>\n<\/td>\n<\/tr>\n

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Prz\u00f3d<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Wyko\u0144czenie powierzchni<\/p>\n<\/td>\n

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SI-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

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Cz\u0105steczki<\/p>\n<\/td>\n

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\u226460ea\/wafel (rozmiar \u22650,3 \u03bcm)<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Zadrapania<\/p>\n<\/td>\n

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\u22645EA\/mm. Kumulatywna d\u0142ugo\u015b\u0107 \u2264 -diameter<\/p>\n<\/td>\n

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Skumulowana d\u0142ugo\u015b\u0107 \u22642*\u015brednica<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Sk\u00f3rka pomara\u0144czowa\/do\u0142y\/plamy\/pr\u0105\u017cki\/p\u0119kni\u0119cia\/zanieczyszczenie<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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P\u0142yty kraw\u0119dziowe\/wk\u0142adki\/z\u0142amanie\/sze\u015bciok\u0105tne p\u0142yty<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n<\/tr>\n

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Obszary politypowe<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n

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Obszar skumulowany \u226420%<\/p>\n<\/td>\n

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Obszar skumulowany \u226430%<\/p>\n<\/td>\n<\/tr>\n

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Przednie oznaczenie lasera<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n<\/tr>\n

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Jako\u015b\u0107 wstecz<\/p>\n<\/td>\n<\/tr>\n

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Wstecz<\/p>\n<\/td>\n

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CMP-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

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Zadrapania<\/p>\n<\/td>\n

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\u22645EA\/mm, kumulatywna d\u0142ugo\u015b\u0107 \u22642*\u015brednica<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Wady tylne (chipsy kraw\u0119dziowe\/wentylatory)<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n<\/tr>\n

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Chropowato\u015b\u0107 plec\u00f3w<\/p>\n<\/td>\n

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RA \u2264 0,2 nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Oznaczenie lasera z ty\u0142u<\/p>\n<\/td>\n

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1 mm (od g\u00f3rnej kraw\u0119dzi)<\/p>\n<\/td>\n<\/tr>\n

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Kraw\u0119d\u017a<\/p>\n<\/td>\n<\/tr>\n

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Kraw\u0119d\u017a<\/p>\n<\/td>\n

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\u015aci\u0119cie<\/p>\n<\/td>\n<\/tr>\n

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Opakowanie<\/p>\n<\/td>\n<\/tr>\n

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Opakowanie<\/p>\n<\/td>\n

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Epi-gotowe z opakowaniem pr\u00f3\u017cniowym<\/p>\n

Opakowanie kaseta z wieloma falami<\/p>\n<\/td>\n<\/tr>\n

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*Uwagi \uff1a \u201eNa\u201d oznacza, \u017ce \u200b\u200bbrak wymienionych element\u00f3w, kt\u00f3re nie wspomniane elementy mog\u0105 zapozna\u0107 si\u0119 z p\u00f3\u0142-STD.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Wafle <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

30mm Aluminum Nitride Wafer Substrate\u2013 Elevate the performance of your electronic and optoelectronic devices with Semicera\u2019s 30mm Aluminum Nitride Wafer Substrate, designed for exceptional thermal conductivity and high electrical insulation.<\/p>","protected":false},"featured_media":675,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[55,26],"product_tag":[],"class_list":{"0":"post-1403","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-ain-wafer","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product\/1403","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/comments?post=1403"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/media\/675"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/media?parent=1403"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product_brand?post=1403"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product_cat?post=1403"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product_tag?post=1403"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}