{"id":1412,"date":"2025-09-11T05:29:00","date_gmt":"2025-09-11T05:29:00","guid":{"rendered":"https:\/\/weitai2.globaldeepsea.site\/product\/6-inch-n-type-sic-wafer\/"},"modified":"2026-04-29T15:33:35","modified_gmt":"2026-04-29T07:33:35","slug":"6-inch-n-type-sic-wafer","status":"publish","type":"product","link":"https:\/\/www.cn-semiconductorparts.com\/pl\/product\/6-inch-n-type-sic-wafer\/","title":{"rendered":"6 Inch N-type SiC Wafer"},"content":{"rendered":"
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Semicera\u2019s 6 Inch N-type SiC Wafer stands at the forefront of semiconductor technology. Crafted for optimal performance, this wafer excels in high-power, high-frequency, and high-temperature applications, essential for advanced electronic devices.<\/span><\/p>\n

Our 6 Inch N-type SiC wafer features high electron mobility and low on-resistance, which are critical parameters for power devices such as MOSFETs, diodes, and other components. These properties ensure efficient energy conversion and reduced heat generation, enhancing the performance and lifespan of electronic systems.<\/span><\/p>\n

Semicera\u2019s rigorous quality control processes ensure that each SiC wafer maintains excellent surface flatness and minimal defects. This meticulous attention to detail ensures that our wafers meet the stringent requirements of industries such as automotive, aerospace, and telecommunications.<\/span><\/p>\n

In addition to its superior electrical properties, the N-type SiC wafer offers robust thermal stability and resistance to high temperatures, making it ideal for environments where conventional materials might fail. This capability is particularly valuable in applications involving high-frequency and high-power operations.<\/span><\/p>\n

By choosing Semicera\u2019s 6 Inch N-type SiC Wafer, you are investing in a product that represents the pinnacle of semiconductor innovation. We are committed to providing the building blocks for cutting-edge devices, ensuring that our partners in various industries have access to the best materials for their technological advancements.<\/span><\/p>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
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Rzeczy<\/p>\n<\/td>\n

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Produkcja<\/p>\n<\/td>\n

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Badania<\/p>\n<\/td>\n

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Atrapa<\/p>\n<\/td>\n<\/tr>\n

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Parametry kryszta\u0142\u00f3w<\/p>\n<\/td>\n<\/tr>\n

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Polityp<\/p>\n<\/td>\n

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4H<\/p>\n<\/td>\n<\/tr>\n

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B\u0142\u0105d orientacji powierzchni<\/p>\n<\/td>\n

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4\u00b10.15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Parametry elektryczne<\/p>\n<\/td>\n<\/tr>\n

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Dopant<\/p>\n<\/td>\n

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azot typu N.<\/p>\n<\/td>\n<\/tr>\n

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Oporno\u015b\u0107<\/p>\n<\/td>\n

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0,015-0,025OHM \u00b7 cm<\/p>\n<\/td>\n<\/tr>\n

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Parametry mechaniczne<\/p>\n<\/td>\n<\/tr>\n

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\u015arednica<\/p>\n<\/td>\n

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150,0 \u00b1 0,2 mm<\/p>\n<\/td>\n<\/tr>\n

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Grubo\u015b\u0107<\/p>\n<\/td>\n

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350 \u00b1 25 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Pierwotna p\u0142aska orientacja<\/p>\n<\/td>\n

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[1-100]\u00b15\u00b0<\/p>\n<\/td>\n<\/tr>\n

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Pierwotna p\u0142aska d\u0142ugo\u015b\u0107<\/p>\n<\/td>\n

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47,5 \u00b1 1,5 mm<\/p>\n<\/td>\n<\/tr>\n

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Wt\u00f3rne mieszkanie<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n<\/tr>\n

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TTV<\/p>\n<\/td>\n

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\u22645 \u00b5m<\/p>\n<\/td>\n

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\u226410 \u00b5m<\/p>\n<\/td>\n

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\u226415 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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LTV<\/p>\n<\/td>\n

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\u22643 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u22645 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n

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\u226410 \u03bcm (5 mm*5 mm)<\/p>\n<\/td>\n<\/tr>\n

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Uk\u0142on<\/p>\n<\/td>\n

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-15 \u03bcm ~ 15 \u03bcm<\/p>\n<\/td>\n

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-35 \u03bcm ~ 35 \u03bcm<\/p>\n<\/td>\n

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-45 \u03bcm ~ 45 \u03bcm<\/p>\n<\/td>\n<\/tr>\n

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Osnowa<\/p>\n<\/td>\n

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\u226435 \u00b5m<\/p>\n<\/td>\n

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\u226445 \u00b5m<\/p>\n<\/td>\n

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\u226455 \u00b5m<\/p>\n<\/td>\n<\/tr>\n

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Chropowato\u015b\u0107 z przodu (SI-FACE) (AFM)<\/p>\n<\/td>\n

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RA \u2264 0,2 nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Struktura<\/p>\n<\/td>\n<\/tr>\n

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G\u0119sto\u015b\u0107 mikropipe<\/p>\n<\/td>\n

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<1 ea\/cm2<\/p>\n<\/td>\n

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<10 ea\/cm2<\/p>\n<\/td>\n

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<15 ea\/cm2<\/p>\n<\/td>\n<\/tr>\n

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Zanieczyszczenia metalowe<\/p>\n<\/td>\n

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\u22645E10atoms\/cm2<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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BPD<\/p>\n<\/td>\n

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\u22641500 EA\/CM2<\/p>\n<\/td>\n

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\u22643000 EA\/CM2<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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TSD<\/p>\n<\/td>\n

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\u2264500 EA\/CM2<\/p>\n<\/td>\n

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\u22641000 EA\/CM2<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Jako\u015b\u0107 z przodu<\/p>\n<\/td>\n<\/tr>\n

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Prz\u00f3d<\/p>\n<\/td>\n

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Si<\/p>\n<\/td>\n<\/tr>\n

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Wyko\u0144czenie powierzchni<\/p>\n<\/td>\n

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SI-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

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Cz\u0105steczki<\/p>\n<\/td>\n

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\u226460ea\/wafel (rozmiar \u22650,3 \u03bcm)<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Zadrapania<\/p>\n<\/td>\n

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\u22645EA\/mm. Kumulatywna d\u0142ugo\u015b\u0107 \u2264 -diameter<\/p>\n<\/td>\n

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Skumulowana d\u0142ugo\u015b\u0107 \u22642*\u015brednica<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Sk\u00f3rka pomara\u0144czowa\/do\u0142y\/plamy\/pr\u0105\u017cki\/p\u0119kni\u0119cia\/zanieczyszczenie<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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P\u0142yty kraw\u0119dziowe\/wk\u0142adki\/z\u0142amanie\/sze\u015bciok\u0105tne p\u0142yty<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n<\/tr>\n

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Obszary politypowe<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n

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Obszar skumulowany \u226420%<\/p>\n<\/td>\n

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Obszar skumulowany \u226430%<\/p>\n<\/td>\n<\/tr>\n

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Przednie oznaczenie lasera<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n<\/tr>\n

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Jako\u015b\u0107 wstecz<\/p>\n<\/td>\n<\/tr>\n

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Wstecz<\/p>\n<\/td>\n

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CMP-FACE CMP<\/p>\n<\/td>\n<\/tr>\n

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Zadrapania<\/p>\n<\/td>\n

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\u22645EA\/mm, kumulatywna d\u0142ugo\u015b\u0107 \u22642*\u015brednica<\/p>\n<\/td>\n

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Na<\/p>\n<\/td>\n<\/tr>\n

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Wady tylne (chipsy kraw\u0119dziowe\/wentylatory)<\/p>\n<\/td>\n

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Nic<\/p>\n<\/td>\n<\/tr>\n

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Chropowato\u015b\u0107 plec\u00f3w<\/p>\n<\/td>\n

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RA \u2264 0,2 nm (5 \u03bcm*5 \u03bcm)<\/p>\n<\/td>\n<\/tr>\n

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Oznaczenie lasera z ty\u0142u<\/p>\n<\/td>\n

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1 mm (od g\u00f3rnej kraw\u0119dzi)<\/p>\n<\/td>\n<\/tr>\n

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Kraw\u0119d\u017a<\/p>\n<\/td>\n<\/tr>\n

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Kraw\u0119d\u017a<\/p>\n<\/td>\n

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\u015aci\u0119cie<\/p>\n<\/td>\n<\/tr>\n

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Opakowanie<\/p>\n<\/td>\n<\/tr>\n

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Opakowanie<\/p>\n<\/td>\n

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Epi-gotowe z opakowaniem pr\u00f3\u017cniowym<\/p>\n

Opakowanie kaseta z wieloma falami<\/p>\n<\/td>\n<\/tr>\n

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*Uwagi \uff1a \u201eNa\u201d oznacza, \u017ce \u200b\u200bbrak wymienionych element\u00f3w, kt\u00f3re nie wspomniane elementy mog\u0105 zapozna\u0107 si\u0119 z p\u00f3\u0142-STD.<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n

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\"tech_1_2_size\" <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n
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\"Wafle <\/img><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/p><\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

Semicera\u2019s 6 Inch N-type SiC Wafer offers outstanding thermal conductivity and high electric field strength, making it a superior choice for power and RF devices. This wafer, tailored to meet industry demands, exemplifies Semicera\u2019s commitment to quality and innovation in semiconductor materials.<\/p>","protected":false},"featured_media":686,"comment_status":"closed","ping_status":"open","template":"","meta":[],"product_brand":[],"product_cat":[35,26],"product_tag":[],"class_list":{"0":"post-1412","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-sic-substrate","7":"product_cat-wafer","9":"first","10":"instock","11":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product\/1412","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/comments?post=1412"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/media\/686"}],"wp:attachment":[{"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/media?parent=1412"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product_brand?post=1412"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product_cat?post=1412"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.cn-semiconductorparts.com\/pl\/wp-json\/wp\/v2\/product_tag?post=1412"}],"curies":[{"name":"WP","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}